BSZ070N08LS5 [INFINEON]
英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。;![BSZ070N08LS5](http://pdffile.icpdf.com/pdf2/p00370/img/icpdf/BSZ070N08LS5_2257535_icpdf.jpg)
型号: | BSZ070N08LS5 |
厂家: | ![]() |
描述: | 英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。 开关 无线 栅 驱动 控制器 电信 微控制器 栅极 |
文件: | 总11页 (文件大小:1772K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BSZ084N08NS5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET BSZ084N08NS5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
INFINEON
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BSZ086P03NS3 G
英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求,例如导通电阻特性和品质因数特性。
INFINEON
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BSZ086P03NS3EGATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
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BSZ086P03NS3EGXT
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
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BSZ086P03NS3GATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
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BSZ088N03LSGATMA1
Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8
INFINEON
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