BSZ086P03NS3 G [INFINEON]
英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。;
| 型号： | BSZ086P03NS3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 |
| 文件： | 总11页 (文件大小：1477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ086P03NS3ꢀG
MOSFET
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
S3O8
Features
•ꢀsingleꢀP-ChannelꢀinꢀS3O8
•ꢀQualifiedꢀaccordingꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀ150ꢀ°Cꢀoperatingꢀtemperature
•ꢀVGS=25ꢀV,ꢀspeciallyꢀsuitedꢀforꢀnotebookꢀapplications
•ꢀPb-free;ꢀRoHSꢀcompliant
•ꢀapplications:ꢀbatteryꢀmanagement,ꢀloadꢀswitching
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
S 2
S 3
G 4
8 D
7 D
Parameter
Value
Unit
VDS
-30
V
RDS(on),max
ID
8.6
mΩ
A
6 D
5 D
-40
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSZ086P03NS3 G
PG-TSDSON-8
086P3N
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-40
-40
-13.5
TC=25ꢀ°C
Continuous drain current
ID
A
TC=70ꢀ°C
TA=25ꢀ°C1)
Pulsed drain current
ID,pulse
EAS
-
-
-
-
-160
105
25
A
TC=25ꢀ°C2)
Avalanche energy, single pulse
Gate source voltage
-
mJ
V
ID=-20ꢀA,ꢀRGS=25ꢀΩ
VGS
-25
-
-
-
-
-
69
2.1
TA=25ꢀ°C
Power dissipation
Ptot
-
TA=25ꢀ°C1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
ESD class
-
-
-
-
1C
-
-
-
(1kV-2kV), JESD22-A114 HBM
-
Soldering temperature
260
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.8
K/W
K/W
-
-
Thermal resistance, junction - ambient,
6 cm2 cooling area1)
-
-
60
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Fig. 3 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-30
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=-250A
-3.1
-2.5
-1.9
VDS=VGS,ꢀID=-105ꢀµA
-
-
-
-
-1
-10
VDS=-30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
-
-100
VGS=-25ꢀV,ꢀVDS=0ꢀV
-
-
6.5
8.7
8.6
13.4
VGS=-10ꢀV,ꢀID=-20ꢀA
VGS=-6ꢀV,ꢀID=-20ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
2.2
43
-
-
Ω
-
Transconductance
30
S
|VDS|>2|ID|RDS(on)max,ꢀID=-20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
3190 4785 pF
1520 2280 pF
VGS=0ꢀV,ꢀVDS=-15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-15ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
110
16
165
24
pF
ns
VDD=-15ꢀV,ꢀVGS=-10ꢀV,ꢀID=-20ꢀA,
RG,ext=6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=-15ꢀV,ꢀVGS=-10ꢀV,ꢀID=-20ꢀA,
RG,ext=6ꢀΩ
46
35
8
69
53
12
ns
ns
ns
VDD=-15ꢀV,ꢀVGS=-10ꢀV,ꢀID=-20ꢀA,
RG,ext=6ꢀΩ
Turn-off delay time
Fall time
VDD=-15ꢀV,ꢀVGS=-10ꢀV,ꢀID=-20ꢀA,
RG,ext=6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
16.1
5.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
21.4
6.7
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀID=-20ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-15ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
7.4
11.1
25.7
57.5
-
Qsw
18.4
43.2
-4.5
Gate charge total
Qg
Gate plateau voltage
Output charge
Vplateau
Qoss
34.9
46.4
nC
1) See Fig. 3 for more detailed information
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-40
-160
-1.1
-
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
-
V
VGS=0ꢀV,ꢀIF=-40ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=|IS|,ꢀdiF/dt=100ꢀA/µs
VR=15ꢀV,ꢀIF=|IS|,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
39
34
ns
nC
Qrr
-
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
48
44
40
36
32
28
24
20
16
12
8
70
60
50
40
30
20
10
0
4
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC);ꢀtp≤10ꢀs
ID=f(TC);ꢀ|VGS|≥10ꢀV;ꢀtp≤10ꢀs
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
102
101
1 ms
100
0.5
0.2
0.1
DC
0.05
100
0.02
10-1
10 ms
0.01
single pulse
10-1
10-2
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJS=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
40
40
-4.5 V
-5.0 V
35
-4.0 V
30
20
10
0
30
25
-4.5 V
-10 V
-4.2V
20
15
10
5
-4.0 V
-5.0 V
- 6 V
-10 V
-3.7 V
-3.5 V
0
0
1
2
3
0
10
20
30
40
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
60
60
50
40
30
20
40
20
0
150 °C
10
25 °C
0
0
1
2
3
4
5
6
0
10
20
30
VGSꢀ[V]
-IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
12
4.0
3.5
10
3.0
max.
98 %
2.5
typ.
8
2.0
min.
typ.
1.5
6
4
1.0
0.5
0.0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=-20ꢀA;ꢀVGS=-10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=-105ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
102
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
Ciss
Coss
103
102
101
101
100
Crss
10-1
0
10
20
30
0.0
0.5
1.0
1.5
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
8
7
6
5
4
3
2
1
-15 V
-6 V
-24 V
25 °C
100 °C
125 °C
101
100
0
0
100
101
102
103
20
40
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=-20ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
36
34
32
30
28
26
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2019-12-03
OptiMOSTMꢀP3ꢀPower-Transistor,ꢀꢀ-30ꢀV
BSZ086P03NS3ꢀG
RevisionꢀHistory
BSZ086P03NS3 G
Revision:ꢀ2019-12-03,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update SOA Diagram
2.4
2019-12-03
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2019ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2019-12-03
相关型号：
BSZ086P03NS3EGATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ086P03NS3EGXT
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ086P03NS3GATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ088N03LSGATMA1
Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8
INFINEON
BSZ0901NSATMA1
Power Field-Effect Transistor, 22A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ0901NSIATMA1
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
©2020 ICPDF网 联系我们和版权申明