BSZ084N08NS5 [INFINEON]
Infineon’s OptiMOS™ 5 80V industrial power MOSFET BSZ084N08NS5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. ;型号: | BSZ084N08NS5 |
厂家: | Infineon |
描述: | Infineon’s OptiMOS™ 5 80V industrial power MOSFET BSZ084N08NS5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. |
文件: | 总11页 (文件大小:1769K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
BSZ086P03NS3 G
英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求,例如导通电阻特性和品质因数特性。
INFINEON
BSZ086P03NS3EGATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ086P03NS3EGXT
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ086P03NS3GATMA1
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ088N03LSGATMA1
Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8
INFINEON
BSZ0901NSATMA1
Power Field-Effect Transistor, 22A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
©2020 ICPDF网 联系我们和版权申明