BF987 [INFINEON]
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability); 硅N沟道MOSFET三极管（高频阶段高达300 MHz ，最好是在FM应用高过载能力）
| 型号： | BF987 |
| 厂家： | 
Infineon |
| 描述： | SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon N Channel MOSFET Triode
BF 987
● For high-frequency stages up to 300 MHz,
preferably in FM applications
● High overload capability
Package1)
TO-92
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BF 987
–
Q62702-F35
D
S
G
Maximum Ratings
Parameter
Symbol
Values
20
Unit
Drain-source voltage
Drain current
V
DS
V
I
D
30
mA
Gate-source peak current
Total power dissipation, TA ≤ 45 ˚C
Storage temperature range
Channel temperature
± IGSM
10
Ptot
300
mW
T
stg
ch
– 55 … + 150 ˚C
150
T
Thermal Resistance
Junction - ambient
R
th JA
≤ 350
K/W
1)
For detailed information see chapter Package Outlines.
BF 987
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VGS = 4 V
V
(BR) DS
20
6.5
–
–
–
–
–
–
–
V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
± V(BR) GSS
± IGSS
12
50
18
2.5
Gate-source leakage current
± VGS = 5 V, VDS = 0
nA
mA
V
Drain current
IDSS
5
VDS = 10 V, VGS = 0
Gate-source pinch-off voltage
= 20 µA
– VGS (p)
–
V
DS = 10 V, I
D
AC Characteristics
Forward transconductance
g
fs
14
–
16
2.7
35
1
–
–
–
–
–
mS
pF
fF
V
DS = 10 V, I
D
= 10 mA, f = 1 kHz
Gate input capacitance
= 10 mA, f = 1 MHz
Reverse transfer capacitance
= 10 mA, f = 1 MHz
Output capacitance
= 10 mA, f = 1 MHz
Power gain (test circuit)
= 10 mA ,f = 200 MHz,
= 0.5 mS
Noise figure (test circuit)
= 10 mA ,f = 200 MHz,
= 0.5 mS
C
C
C
gss
V
DS = 10 V, I
D
dg
–
V
DS = 10 V, I
D
dss
–
pF
dB
V
DS = 10 V, I
D
G
p
–
25
V
DS = 10 V, I
D
GG
= 2 mS, G
L
F
–
1
–
V
DS = 10 V, I
D
GG
= 2 mS, G
L
BF 987
Total power dissipation Ptot = f (T )
A
Output characteristics I = f (VDS)
D
Gate transconductance gfs = f (VGS
)
Drain current I = f (VGS)
D
VDS = 10 V, IDSS = 10 mA, f = 1 kHz
V
DS = 10 V
BF 987
Gate input capacitance Cgss = f (VGS
)
Output capacitance Cdss = f (VDS
)
V
DS = 10 V, IDSS = 10 mA, f = 1 MHz
VGS = 0, IDSS = 10 mA, f = 1 MHz
Reverse transfer capacitance Cdg = f (VDS
DSS = 10 mA, f = 1 MHz, VGS = 0
)
Gate input admittance y11s
I
V
DS = 10 V, IDSS = 10 mA, V = 0
G
(common source)
BF 987
Gate forward transfer admittance y21s
DS = 10 V, V = 0, IDSS = 10 mA
Output admittance y22s
DS = 10 V, IDSS = 10 mA, V = 0
V
G
V
G
(common source)
(common source)
Test circuit for power gain and noise figure
f= 200 MHz
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