BF988A [ETC]
TRANSISTOR RF MOSFET ; 射频晶体管MOSFET\n
| 型号： | BF988A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR RF MOSFET
|
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF988
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages of VHF- and UHF-tuners.
Features
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
High gain
3
G2
G1
D
S
4
2
94 9307
96 12647
1
BF988 Marking: BF988
Plastic case (TO 50)
12623
1
Drain, 2 Source, 3 Gate 1, 4 Gate 2
Absolute Maximum Ratings
Parameters
Drain source voltage
Symbol
Value
Unit
V
V
DS
I
D
12
30
Drain current
mA
mA
mW
°C
Gate 1/gate 2-source peak current
±I
10
G1/2SM
Total power dissipation
Channel temperature
T
amb
≤ 60°C
P
T
200
tot
150
Ch
Storage temperature range
T
stg
–55 to +150
°C
Maximum Thermal Resistance
Parameters
Symbol
Value
450
Unit
K/W
Channel ambient on glass fibre printed board
(40 x 25 x 1.5) mm plated with 35 m Cu
3
R
thChA
TELEFUNKEN Semiconductors
1 (8)
Rev. A2, 29–Jan–97
BF988
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameters / Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
I = 10 A, –V = –V = 4 V
V
12
8
V
V
D
G1S
G2S
(BR)DS
Gate 1-source breakdown voltage
±I = 10 mA, V = V = 0
±V
±V
14
14
50
50
G1S
G2S
DS
(BR)G1SS
Gate 2-source breakdown voltage
±I = 10 mA, V = V = 0
8
V
G2S
G1S
DS
(BR)G2SS
Gate 1-source leakage current
±V = 5 V, V = V = 0
±I
nA
nA
G1S
G2S
DS
G1SS
G2SS
Gate 2-source leakage current
±V = 5 V, V = V = 0
±I
G2S
G1S
DS
Drain current
= 8 V, V
V
= 0, V
= 4 V
BF988
BF988A
BF988B
I
I
I
4
4
9.5
18
10.5
18
mA
mA
mA
DS
G1S
G2S
DSS
DSS
DSS
Gate 1-source cut-off voltage
= 8 V, V = 4 V, I = 20 A
V
DS
–V
–V
2.5
2.0
V
V
G2S
D
G1S(OFF)
G2S(OFF)
Gate 2-source cut-off voltage
= 8 V, V = 0, I = 20 A
V
DS
G1S
D
Electrical AC Characteristics
V
DS
= 8 V, I = 10 mA, V
= 4 V, f = 1 MHz, T
= 25°C, unless otherwise specified
D
G2S
amb
Parameters / Test Conditions
Type
Symbol
Min.
21
Typ.
24
Max.
2.5
Unit
mS
pF
Forward transmittance
Gate 1-input capacitance
Gate 2-input capacitance
y
21s
C
issg1
2.1
V
= 0, V
= 4 V
C
1.2
25
pF
fF
G1S
G2S
issg2
Feedback capacitance
Output capacitance
Power gain
C
rss
C
1.05
pF
oss
g = 2 mS, g = 0.5 mS, f = 200 MHz
G
G
28
20
dB
dB
S
L
ps
ps
g = 3.3 mS, g = 1 mS, f = 800 MHz
16.5
40
S
L
AGC range
V
G2S
= 4 to –2 V, f = 800 MHz
∆G
dB
ps
Noise figure
g = 2 mS, g = 0.5 mS, f = 200 MHz
F
F
1
1.5
dB
dB
S
L
g = 3.3 mS, g = 1 mS, f = 800 MHz
S
L
2 (8)
TELEFUNKEN Semiconductors
Rev. A2, 29-Jan-97
BF988
Common Source S-Parameters
G2S = 4 V, Z0 = 50
V
S
11
S
21
S
12
S
22
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
V /V
DS
I /mA
D
f/MHz
dB
dB
dB
dB
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.02
–0.10
–0.31
–0.56
–0.87
–1.26
–1.59
–2.04
–2.42
–2.88
–3.39
–3.94
–4.46
–7.8
6.01
5.87
5.69
5.42
5.17
4.85
4.54
4.25
4.02
3.78
3.42
3.21
3.01
168.4
156.3
144.2
132.9
121.5
110.6
100.4
90.2
80.6
70.8
60.5
51.6
–56.27
–50.61
–47.70
–46.19
–45.46
–45.84
–47.31
–48.19
–50.37
–49.48
–47.92
–44.65
–41.76
83.0
76.6
70.9
65.6
60.6
55.4
58.6
63.3
81.5
115.6
131.7
153.0
159.8
–0.02
–0.06
–0.13
–0.20
–0.28
–0.36
–0.43
–0.49
–0.52
–0.54
–0.66
–0.66
–0.66
–3.6
–7.3
–15.3
–22.8
–30.2
–37.3
–44.3
–50.9
–58.0
–64.4
–71.4
–78.3
–85.2
–91.8
–10.6
–14.2
–17.5
–20.5
–23.8
–26.8
–30.2
–33.4
–36.8
–40.1
–43.9
5
42.0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.02
–0.11
–0.35
–0.62
–0.97
–1.39
–1.76
–2.25
–2.67
–3.16
–3.72
–4.30
–4.87
–8.3
7.84
7.70
7.49
7.21
6.93
6.59
6.27
5.97
5.71
5.46
5.07
4.85
4.63
168.5
156.6
144.8
133.6
122.5
111.9
101.9
92.1
82.8
73.3
63.3
54.6
–55.67
–50.01
–47.20
–45.60
–44.88
–45.25
–46.51
–47.19
–49.28
–48.99
–48.03
–45.15
–42.46
83.0
76.4
70.3
65.1
60.0
54.5
57.4
61.4
76.0
107.1
123.3
147.6
157.0
–0.04
–0.09
–0.16
–0.23
–0.31
–0.42
–0.48
–0.55
–0.58
–0.60
–0.73
–0.73
–0.73
–3.7
–7.4
–16.1
–24.0
–31.6
–39.2
–46.4
–53.2
–60.3
–67.1
–74.1
–81.1
–88.0
–94.4
–10.8
–14.3
–17.9
–20.9
–24.1
–27.3
–30.6
–33.8
–37.2
–40.6
–44.3
10
8
45.4
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.01
–0.13
–0.37
–0.66
–1.02
–1.47
–1.85
–2.36
–2.80
–3.30
–3.89
–4.49
–5.06
–8.4
8.62
8.46
8.26
7.96
7.66
7.33
6.98
6.68
6.42
6.15
5.75
5.52
5.30
168.6
156.8
145.2
134.0
122.9
112.3
102.6
92.8
83.7
74.3
64.6
56.0
–55.26
–49.61
–46.70
–45.10
–44.38
–44.65
–45.72
–46.29
–48.18
–48.49
–47.93
–45.75
–43.05
83.0
76.3
70.3
64.9
59.7
54.3
57.0
60.0
71.9
98.7
114.8
141.2
153.4
–0.07
–0.12
–0.20
–0.27
–0.36
–0.47
–0.53
–0.61
–0.64
–0.66
–0.77
–0.79
–0.79
–3.7
–7.5
–16.4
–24.5
–32.3
–39.8
–47.0
–54.1
–61.3
–67.9
–75.0
–82.0
–88.8
–95.2
–11.0
–14.4
–18.0
–20.9
–24.2
–27.4
–30.6
–33.9
–37.3
–40.8
–44.5
15
46.9
TELEFUNKEN Semiconductors
3 (8)
Rev. A2, 29–Jan–97
BF988
Typical Characteristics (Tj = 25 C unless otherwise specified)
250
4V
20
3V
2V
5V
V
=8V
DS
200
150
100
50
16
12
8
1V
0
4
V
=–1V
G1S
0
0
0
30
60
90
120
150
–0.6
–0.2
0.2
0.6
1.0
1.4
96 12159
T
amb
– Ambient Temperature ( °C )
12817
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
2.8
V
=0.6V
V
=8V
=4V
G1S
DS
V
=4V
G2S
2.4
2.0
1.6
1.2
0.8
0.4
0
V
G2S
25
20
15
10
5
f=1MHz
0.4V
0.2V
0
–0.2V
–0.4V
0
0
2
4
6
8
10
–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
12812
V
– Drain Source Voltage ( V )
12813
V
G1S
– Gate 1 Source Voltage ( V )
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
2.8
20
3V
2V
V
=8V
V
=8V
6V
5V
4V
DS
DS
2.4
2.0
1.6
1.2
0.8
0.4
0
V
=0
G1S
16
12
8
f=1MHz
1V
0
=–1V
4
V
G2S
0
–0.8
–0.4
0.0
0.4
0.8
1.2
–1
0
1
2
3
4
5
12816
V
– Gate 1 Source Voltage ( V )
12814
V
– Gate 2 Source Voltage ( V )
G2S
G1S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
4 (8)
TELEFUNKEN Semiconductors
Rev. A2, 29-Jan-97
BF988
4.0
3.2
2.4
1.6
0.8
0
20
18
16
14
12
10
8
f=1300MHz
1000MHz
V
V
f=1MHz
=4V
G2S
=0
G1S
700MHz
V
=8V
=4V
DS
6
400MHz
V
G2S
4
I =10mA
D
f=100...1300MHz
2
100MHz
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
12815
V
– Drain Source Voltage ( V )
12820
Re (y
)
( mS )
DS
11
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 10. Short Circuit Input Admittance
10
5
4V
V
=8V
=4V
f=800MHz
DS
f=100MHz
3V
0
–5
V
G2S
0
2V
f=100...1300MHz
1V
–10
–10
–15
–20
–25
–30
–35
–40
I =5mA
D
0
10mA
400MHz
700MHz
–20
–0.2V
20mA
–30
–0.4V
1000MHz
–40
V
=–0.8V
G2S
1300MHz
–50
–1
–0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
Re (y ( mS )
12818
V
– Gate 1 Source Voltage ( V )
12821
)
21
G1S
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
Figure 11. Short Circuit Forward Transfer Admittance
32
9
V
=8V
V
=4V
3V
DS
G2S
f=1300MHz
8
7
6
5
4
3
2
1
0
28
24
20
16
12
8
f=1MHz
1000MHz
700MHz
2V
V
V
=15V
400MHz
DS
=4V
G2S
1V
I =10mA
D
4
100MHz
f=100...1300MHz
0
4
0
0
8
12
16
20
24
28
0
0.25 0.50 0.75 1.00 1.25 1.50
Re (y ( mS )
12819
I
– Drain Current ( mA )
12822
)
22
D
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
TELEFUNKEN Semiconductors
5 (8)
Rev. A2, 29–Jan–97
BF988
VDS = 8 V; ID = 10 mA;VG2S = 4 V; Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
150°
1300MHz
30°
300
j0.2
j5
1000
100
0
0.2
0.5
1
2
5
180°
0.04
0.08
0°
100
–j0.2
–j5
1300MHz
1000
–150°
–30°
–j0.5
–j2
–120°
–60°
12 960
–j
–90°
12 961
Figure 13. Input reflection coefficient
Figure 15. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
700
j0.5
j2
1000
400
150°
30°
j0.2
j5
1300MHz
1
100
180°
2
0°
0
0.2
0.5
1
2
5
100
–j0.2
–j5
–150°
–30°
1300MHz
–j0.5
–j2
–120°
–60°
12 963
–j
–90°
12 962
Figure 14. Forward transmission coefficient
Figure 16. Output reflection coefficient
6 (8)
TELEFUNKEN Semiconductors
Rev. A2, 29-Jan-97
BF988
Dimensions in mm
96 12242
TELEFUNKEN Semiconductors
7 (8)
Rev. A2, 29–Jan–97
BF988
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
8 (8)
TELEFUNKEN Semiconductors
Rev. A2, 29-Jan-97
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