BF988_08 [VISHAY]
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管，耗尽型
| 型号： | BF988_08 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 文件： | 总9页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
3
4
• High cross modulation performance
2
e3
• Low noise figure
1
• High gain
G
D
S
2
• High AGC-range
G
1
• Low feedback capacitance
• Low input capacitance
• Lead (Pb)-free component
Electrostatic sensitive device.
Observe precautions for handling.
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
13625
Applications
Input- and mixer stages especially VHF- and UHF-
tuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF988
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Part
Ordering Ccode
Marking
Package
BF988
BF988A
BF988A
BF988
BF988
TO50
TO50
BF988A
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
12
Unit
V
Drain - source voltage
VDS
ID
Drain current
30
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Total power dissipation
Channel temperature
Tamb ≤ 60 °C
Ptot
TCh
Tstg
200
150
mW
°C
Storage temperature range
- 55 to + 150
°C
Document Number 85007
Rev. 1.7, 11-Sep-08
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1
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
450
Unit
K/W
1)
Channel ambient
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
V
Drain - source breakdown
voltage
ID = 10 μA, - VG1S = - VG2S = 4 V
V(BR)DS
12
Gate 1 - source breakdown
voltage
IG1S = 10 mA, VG2S = VDS = 0
IG2S = 10 mA, VG1S = VDS = 0
VG1S = 5 V, VG2S = VDS = 0
V(BR)G1SS
V(BR)G2SS
7
14
14
V
V
Gate 2 - source breakdown
voltage
7
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain current
IG1SS
IG2SS
50
50
nA
nA
mA
V
V
G2S = 5 V, VG1S = VDS = 0
V
V
DS = 15 V, VG1S = 0, VG2S = 4 V BF988A
DS = 15 V, VG2S = 4 V,
IDSS
4
10.5
2.5
Gate 1 - source cut-off voltage
- VG1S(OFF)
ID = 20 μA
Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 μA
- VG2S(OFF)
2.0
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
V
DS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter Test condition
Symbol
|y21s
Min
21
Typ.
Max
2.5
Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
|
24
2.1
1.2
25
mS
pF
pF
fF
Cissg1
Cissg2
Crss
V
G1S = 0, VG2S = 4 V
Coss
Gps
1.05
28
pF
dB
G
S = 2 mS, GL = 0.5 mS,
f = 200 MHz
S = 3,3 mS, GL = 1 mS,
f = 800 MHz
G2S = 4 to - 2 V, f = 800 MHz
S = 2 mS, GL = 0.5 mS,
G
Gps
16.5
40
20
dB
AGC range
Noise figure
V
ΔGps
dB
dB
G
F
1
f = 200 MHz
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
F
1.5
dB
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2
Document Number 85007
Rev. 1.7, 11-Sep-08
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Common Emitter S-Parameters
VDS = 8 V, VG2S = 4 V, Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
ID/mA
f/MHz
S11
S21
S12
S22
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
deg
deg
168.4
156.3
144.2
132.9
121.5
110.6
100.4
90.2
deg
83.0
76.6
70.9
65.6
60.6
55.4
58.6
63.3
81.5
115.6
131.7
153.0
159.8
83.0
76.4
70.3
65.1
60.0
54.5
57.4
61.4
76.0
107.1
123.3
147.6
157.6
83.0
76.3
70.3
64.9
59.7
54.3
57.0
60.0
71.9
98.7
114.8
141.2
153.4
deg
5
100
200
-0.02
-0.10
-0.31
-0.56
-0.87
-1.26
-1.59
-2.04
-2.42
-2.88
-3.39
-3.94
-4.46
-0.02
-0.11
-0.35
-0.62
-0.97
-1.39
-1.76
-2.25
-2.67
-3.16
-3.72
-4.30
-4.87
-0.01
-0.13
-0.37
-0.66
-1.02
-1.47
-1.85
-2.36
-2.80
-3.30
3.89
-7.8
6.01
5.87
5.69
5.42
5.17
4.85
4.54
4.25
4.02
3.78
3.42
3.21
3.01
7.84
7.70
7.49
7.21
6.93
6.59
6.27
5.97
5.71
5.46
5.07
4.85
4.63
8.62
8.46
8.26
7.96
7.66
7.33
6.98
6.68
6.42
6.15
5.75
5.52
5.30
-56.27
-50.61
-47.70
-46.19
-45.46
-45.84
-47.31
-48.19
-50.37
-49.48
47.92
-0.02
-0.06
-0.13
-0.20
-0.28
-0.36
-0.43
-0.49
-0.52
-0.54
-0.66
-0.66
-0.66
-0.04
-0.09
-0.16
-0.23
-0.31
-0.42
-0.48
-0.55
-0.58
-0.60
-0.73
-0.73
-0.73
-0.07
-0.12
-0.20
-0.27
-0.36
-0.47
-0.53
-0.61
-0.64
-0.66
-0.77
-0.79
-0.79
-3.6
-15.3
-22.8
-30.2
-37.3
-44.3
-50.9
-58.0
-64.4
-71.4
-78.3
-85.2
-91.8
-8.3
-7.3
300
-10.6
-14.2
-17.5
20.5
400
500
600
700
-23.8
-26.8
-30.2
-33.4
-36.8
-40.1
-43.9
-3.7
800
900
80.6
1000
1100
1200
1300
100
70.8
60.5
51.6
-44.65
-41.76
-55.67
-50.01
-47.20
-45.60
-44.88
-45.25
-46.51
-47.19
-49.28
-48.99
-48.03
-45.15
-42.46
-55.26
-49.61
-46.70
-45.10
-44.38
-44.65
-45.72
-46.29
-48.18
-48.49
-47.93
-45.75
-43.05
42.0
10
168.5
156.6
144.8
133.6
122.5
111.9
101.9
92.1
200
-16.1
-24.0
-31.6
-39.2
-46.4
-53.2
-60.3
-67.1
-74.1
-81.1
-88.0
-94.4
-8.4
-7.4
300
-10.8
-14.3
17.9
400
500
600
-20.9
-24.1
-27.3
-30.6
-33.8
-37.2
-40.6
-44.3
-3.7
700
800
900
82.8
1000
1100
1200
1300
100
73.3
63.3
54.6
45.4
15
168.6
156.8
145.2
134.0
122.9
112.3
102.6
92.8
200
-16.4
-24.5
-32.3
-39.8
-47.0
-54.1
-61.3
-67.9
-75.0
-82.0
-88.8
-95.2
-7.5
3000
400
-11.0
-14.4
-18.0
-20.9
-24.2
-27.4
-30.6
-33.9
-37.3
-40.8
-44.5
500
600
700
800
900
83.7
1000
1100
1200
1300
74.3
64.6
-4.49
-5.06
56.0
46.9
Document Number 85007
Rev. 1.7, 11-Sep-08
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Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
4 V
3 V
2 V
20
5 V
250
200
150
100
50
VDS = 8 V
16
12
8
1 V
0
4
VG1S = - 1 V
0
0
0
20 40 60 80 100 120 140 160
- Ambient Temperature (°C)
- 0.6
- 0.2
0.2
0.6
1.0
1.4
T
amb
96 12159
12817
V
G2S - Gate 2 Source Voltage (V)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
2.8
V
= 4V
V
= 8 V
= 4 V
G2S
DS
V
= 0.6 V
0.4 V
25
20
15
10
5
G1S
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
G2S
f = 1 MHz
0.2 V
0
- 0.2 V
- 0.4 V
0
0
2
4
6
8
10
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
– Gate 1 Source Voltage ( V )
12812
V
DS - Drain Source Voltage (V)
12813
V
G1S
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
20
3 V
2 V
2.8
VDS = 8 V
6 V
5 V
4 V
V
V
= 8 V
DS
16
12
8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
= 0
G1S
1 V
f = 1 MHz
0
4
VG2S = - 1 V
0.8 1.2
0
- 0.8
- 0.4
0.0
0.4
–1
0
1
2
3
4
5
12816
VG1S - Gate 1 Source Voltage (V)
12814
V
– Gate 2 Source Voltage ( V )
G2S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
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Document Number 85007
Rev. 1.7, 11-Sep-08
4
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
20
18
16
14
12
10
8
4.0
3.2
2.4
1.6
0.8
0.0
f = 1300 MHz
1000 MHz
V
V
= 4 V
= 0
G2S
G1S
f = 1 MHz
700 MHz
V
= 8 V
= 4 V
DS
6
400 MHz
V
G2S
= 10 mA
4
I
D
f = 100...1300 MHz
2
100 MHz
0
0
2
4
6
8
10 12 14
2
4
6
8
10
12
12820
Re (y11) (mS)
12815
V
DS
– Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 10. Short Circuit Input Admittance
10
5
0
4 V
V
= 8 V
= 4 V
f = 800 MHz
DS
f = 100 MHz
3 V
V
G2S
0
2 V
f = 100...1300 MHz
- 5
1 V
- 10
- 10
- 15
- 20
- 25
- 30
- 35
- 40
I
= 5 mA
D
0
10 mA
400 MHz
700 MHz
- 20
- 0.2 V
20 mA
- 30
- 0.4 V
1000 MHz
- 40
VG2S = - 0.8 V
1300 MHz
- 50
- 1.0
- 0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
VG1S - Gate 1 Source Voltage (V)
12821
Re (y21) (mS)
12818
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
32
Figure 11. Short Circuit Forward Transfer Admittance
9
VDS = 8 V
f = 1 MHz
VG2S = 4 V
f = 1300 MHz
8
7
6
5
4
3
2
1
0
28
24
20
16
12
8
3 V
1000 MHz
700 MHz
2 V
V
V
= 15 V
400 MHz
DS
= 4 V
G2S
1 V
I
=10 mA
4
D
100 MHz
f = 100...1300 MHz
0
0
0
4
8
12
16
20
24
28
0.00 0.25 0.50 0.75 1.00 1.25 1.50
12819
ID - Drain Current (mA)
12822
Re (y22) (mS)
Figure 9. Forward Transadmittance vs. Drain Current
Figure 12. Short Circuit Output Admittance
Document Number 85007
Rev. 1.7, 11-Sep-08
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Not for new design, this product will be obsoleted soon
Vishay Semiconductors
BF988
V
S
= 8 V, I = 10 mA, V
= 4 V, Z = 50 Ω
DS
11
D
G2S
0
S
21
j
90°
700
120 °
400
60°
j0.5
0.2
j2
1000
150 °
100
30°
j0.2
0
j5
1300 MHz
0.5
1
2
5
180°
1
2
0°
100
- j5
- j0.2
1300 MHz
1000
- 150°
- 30°
- j0.5
- j2
- 120°
- 60°
- j
- 90°
12962
12960
Figure 13. Input Reflection Coefficient
Figure 15. Forward Transmission Coefficient
S
S
22
12
j
90°
120°
60°
j0.5
j2
5
150°
1300 MHz
30°
300
j0.2
0
j5
1000
100
0.2
0.5
1
2
180°
0.04
0.08
0°
100
- j0.2
- j5
–150°
–30°
1300 MHz
- j0.5
- j2
–120°
–60°
12963
- j
12961
–90°
Figure 14. Reverse Transmission Coefficient
Figure 16. Output Reflection Coefficient
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Document Number 85007
Rev. 1.7, 11-Sep-08
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Package Dimensions in mm
96 12242
Document Number 85007
Rev. 1.7, 11-Sep-08
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Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 85007
Rev. 1.7, 11-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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