BCR185WE6327 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | BCR185WE6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR185...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R = 10 kΩ , R = 47 kΩ )
1
2
• BCR185S: Two internally isolated
transistors with good matching
in one multichip package
• BCR185S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR185/W
BCR185S
C
C1
B2
E2
3
6
5
4
R2
R1
R1
TR2
TR1
R1
R2
R2
1
2
3
1
2
E1
B1
C2
B
E
EHA07173
EHA07183
Type
BCR185
BCR185S
BCR185W
Marking
Pin Configuration
1=B 2=E 3=C
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Package
SOT23
WNs
WNs
WNs
-
-
-
1=B 2=E 3=C
-
-
-
SOT323
2011-08-30
1
BCR185...
Maximum Ratings
Parameter
Symbol
Value
50
50
Unit
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
V
V
V
V
CEO
CBO
i(fwd)
i(rev)
40
6
100
mA
I
C
mW
Total power dissipation-
P
tot
BCR185 T ≤ 102°C
200
250
250
S
BCR185S, T ≤ 115°C
S
BCR185W, T ≤ 124°C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BCR185
BCR185S
BCR185W
≤ 240
≤ 140
≤ 105
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-08-30
2
BCR185...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
50
-
-
-
V
V
V
(BR)CEO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
50
-
-
-
-
-
(BR)CBO
C
E
Collector-base cutoff current
= 40 V, I = 0
I
100 nA
167 µA
CBO
V
CB
E
-
Emitter-base cutoff current
I
EBO
V
= 6 V, I = 0
EB
C
1)
70
-
-
DC current gain
h
FE
I = 5 mA, V = 5 V
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
-
-
-
-
0.3
1
V
CEsat
i(off)
C
B
Input off voltage
I = 100 µA, V = 5 V
V
V
0.5
0.5
C
CE
Input on voltage
I = 2 mA, V = 0.3 V
1.4
i(on)
C
CE
Input resistor
Resistor ratio
R
R /R
7
0.19
10
0.21
13
0.24
kΩ
-
1
1
2
AC Characteristics
Transition frequency
-
-
200
3
-
-
MHz
pF
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2011-08-30
3
BCR185...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V (common emitter configuration)
V
= ƒ(I ), h = 20
CE
CEsat
C
FE
10 3
1
V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 2
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 1
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10 -4
10 -3
10 -2
10 -1
10 -3
10 -2
10 -1
A
A
I
I
C
C
Input on Voltage Vi
= ƒ(I )
Input off voltage V
= ƒ(I )
i(off) C
(on)
C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 1
10 2
-40 °C
-25 °C
V
25 °C
-40 °C
-25 °C
85 °C
10 1
125 °C
25 °C
85 °C
125 °C
10 0
10 0
10 -1
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
A
I
I
C
C
2011-08-30
4
BCR185...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BCR185
BCR185S
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
0
0
°C
°C
15 30 45 60 75 90 105 120
150
15 30 45 60 75 90 105 120
150
T
T
S
S
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
BCR185W
BCR185
10 3
K/W
300
mW
250
225
200
175
150
125
100
75
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
50
25
10 -1
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
0
15 30 45 60 75 90 105 120
150
T
t
p
S
2011-08-30
5
BCR185...
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
BCR185S
= ƒ (t )
thJS
p
P
totmax totDC
p
BCR185
10 3
K/W
10 3
-
10 2
10 1
10 0
10 -1
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
BCR185W
= ƒ (t )
thJS
p
P
totmax totDC
p
BCR185S
10 3
K/W
10 3
-
10 2
10 1
10 0
10 -1
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-08-30
6
BCR185...
Permissible Pulse Load
/P = ƒ(t )
P
totmax totDC
p
BCR185W
10 3
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.2
0.5
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
t
p
2011-08-30
7
Package SOT23
BCR185...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-08-30
8
Package SOT323
BCR185...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2011-08-30
9
Package SOT363
BCR185...
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2011-08-30
10
BCR185...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-08-30
11
相关型号：
BCR185WH6327XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
INFINEON
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