BCR185WQ62702C2280 [ETC]
TRANSISTOR DIGITAL SOT323 ; 晶体管数字SOT323\n
| 型号： | BCR185WQ62702C2280 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR DIGITAL SOT323
|
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR 185W
PNP Silicon Digital Transistor
3
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor ( R =10kΩ, R =47kΩ)
1
2
2
C
3
1
VSO05561
R1
R2
1
2
B
E
EHA07183
Type
BCR 185W
Marking
WNs
Pin Configuration
Package
SOT-323
1 = B
2 = E
3 = C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
50
50
6
V
V
V
V
V
CEO
CBO
EBO
i(on)
20
DC collector current
100
250
150
mA
mW
°C
I
C
Total power dissipation, T = 124 °C
Junction temperature
P
tot
S
T
j
Storage temperature
-65 ... 150
T
stg
Thermal Resistance
1)
Junction ambient
K/W
R
≤ 240
≤ 105
thJA
thJS
Junction - soldering point
R
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu
1
Oct-19-1999
BCR 185W
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
50
50
-
DC Characteristics
Collector-emitter breakdown voltage
-
-
-
-
-
-
-
-
-
-
V
V
V
(BR)CEO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
(BR)CBO
I = 10 µA, I = 0
C
B
Collector cutoff current
100 nA
167 µA
I
CBO
V
= 40 V, I = 0
CB
E
Emitter cutoff current
= 6 V, I = 0
-
I
EBO
V
EB
C
DC current gain 1)
70
-
-
-
h
FE
I = 5 mA, V = 5 V
C
CE
Collector-emitter saturation voltage1)
0.3
1
V
V
V
kΩ
V
CEsat
I = 10 mA, I = 0.5 mA
C
B
Input off voltage
0.5
0.5
V
V
i(off)
I = 100 µA, V = 5 V
C
CE
Input on Voltage
1.4
13
i(on)
I = 2 mA, V = 0.3 V
C
CE
Input resistor
Resistor ratio
7
0.19
10
R
1
0.21
0.24 -
R /R
1
2
AC Characteristics
Transition frequency
-
-
200
2
-
-
MHz
pF
f
T
I = 10 mA, V = 5 V, f = 1 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300µs; D < 2%
2
Oct-19-1999
BCR 185W
Collector-Emitter Saturation Voltage
DC Current Gain h = f (I )
FE
C
V
= f (I ), h = 20
C FE
V
= 5V (common emitter configuration)
CEsat
CE
10 2
10 3
-
mA
10 2
10 1
10 1
10 0
10 0
10 -1
10 0
10 1
10 2
0.0
0.2
0.4
0.6
1.0
mA
V
I
V
CEsat
C
Input on Voltage V
= f (I )
Input off voltage V
= f (I )
i(on)
C
i(off) C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 1
10 2
mA
mA
10 0
10 1
10 -1
10 -2
10 -3
10 0
10 -1
10 -1
10 0
10 1
10 2
0.0
0.5
1.0
2.0
i(off)
V
V
V
V
i(on)
3
Oct-19-1999
BCR 185W
Total power dissipation P = f (T *;T )
tot
A
S
* Package mounted on epoxy
300
mW
T
S
200
T
A
150
100
50
0
°C
0
20
40
60
80
100 120
150
T ,T
A
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
4
Oct-19-1999
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
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