BCR189 [INFINEON]
PNP Silicon Digital Transistor; PNP硅晶体管数字
| 型号： | BCR189 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Digital Transistor |
| 文件： | 总7页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR189...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R = 22kΩ)
1
BCR189/F/L3
BCR189T
C
3
R1
1
2
B
E
EHA07180
Type
BCR189
BCR189F
BCR189L3
BCR189T
Marking
W2s
W2s
W2
W2s
Pin Configuration
Package
1=B
1=B
1=B
1=B
2=E 3=C
2=E 3=C
2=E 3=C
2=E 3=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
TSLP-3
TSLP-3-4
SC75
Aug-29-2003
1
BCR189...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Symbol
Value
50
50
Unit
V
V
V
V
V
CEO
CBO
EBO
i(on)
5
30
100
mA
Collector current
I
C
mW
Total power dissipation-
P
tot
BCR189, T ≤ 102°C
200
250
250
250
S
BCR189F, T ≤ 128°C
S
BCR189L3, T ≤ 135°C
S
BCR189T, T ≤ 109°C
S
150
150 ... -65
°C
Junction temperature
Storage temperature
T
j
T
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BCR189
≤ 240
≤ 90
≤ 60
BCR189F
BCR189L3
BCR189T
≤ 165
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Aug-29-2003
2
BCR189...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
50
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
50
5
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector-base cutoff current
I
-
-
100 nA
V
= 40 V, I = 0
CB
E
1)
120
-
-
630
0,3
0,8
1,1
29
-
-
DC current gain
h
FE
I = 5 mA, V = 5 V
Collector-emitter saturation voltage
I = 10 mA, I = 0,5 mA
C
CE
1)
V
V
V
-
V
CEsat
i(off)
C
B
Input off voltage
I = 100 µA, V = 5 V
0,4
0,5
15
-
C
CE
Input on voltage
I = 2 mA, V = 0,3 V
-
i(on)
C
CE
Input resistor
R
22
kΩ
1
AC Characteristics
Transition frequency
-
-
200
3
MHz
pF
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1
Pulse test: t < 300µs; D < 2%
Aug-29-2003
3
BCR189...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V (common emitter configuration)
V
= ƒ(I ), h = 20
CE
CEsat C FE
10 3
10 -1
A
10 -2
10 -3
10 -4
10 2
10 1
10 -4
10 -3
10 -2
10 -1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
1
A
V
I
V
CEsat
C
Input on Voltage Vi
= ƒ(I )
Input off voltage V
= ƒ(I )
i(off) C
(on)
C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 -2
10 -1
A
A
10 -3
10 -4
10 -5
10 -6
10 -2
10 -3
10 -4
10 -1
10 0
10 1
10 2
0
0.5
1
1.5
2
3
V
V
V
V
i(off)
i(on)
Aug-29-2003
4
BCR189...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BCR189
BCR189F
300
mW
300
mW
200
150
100
50
200
150
100
50
0
0
0
0
°C
°C
20
40
60
80
100 120
150
20
40
60
80
100 120
150
T
T
S
S
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BCR189L3
BCR189T
300
mW
300
mW
200
150
100
50
200
150
100
50
0
0
0
0
°C
°C
20
40
60
80
100 120
150
20
40
60
80
100 120
150
T
T
S
S
Aug-29-2003
5
BCR189...
Permissible Pulse Load R
BCR189
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BCR189
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
BCR189F
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BCR189F
10 2
K/W
10 3
D=0.5
0.2
10 1
10 0
10 -1
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.1
0.05
0.02
0.01
0.005
0
0.2
0.5
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Aug-29-2003
6
BCR189...
Permissible Puls Load R
BCR189L3
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BCR189L3
10 2
10 1
10 0
10 -1
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.5
0.2
0.2
0.1
0.5
0.05
0.02
0.01
0.005
D = 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
BCR189T
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BCR189T
10 3
K/W
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
D=0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
0
10 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Aug-29-2003
7
相关型号：
BCR191
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON
BCR191E6327
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明