BCR10PN-E6327 [INFINEON]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon;
BCR10PN-E6327
型号: BCR10PN-E6327
厂家: Infineon    Infineon
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

开关 光电二极管 晶体管
文件: 总5页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BCR10PN-E6433

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
INFINEON

BCR10PN-H6327

NPN/PNP Silicon Digital Transistor Array
INFINEON

BCR10PNH6327XTSA1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
INFINEON

BCR10PNH6727XTSA1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
INFINEON

BCR10PNH6730XTMA1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN
INFINEON

BCR10PNQ62702C2411

TRANSISTOR DIGITAL SOT363
ETC

BCR10PN_07

NPN/PNP Silicon Digital Transistor Array
INFINEON

BCR10UM

MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI

BCR10UM-12

TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB, TO-220, 3 PIN
MITSUBISHI

BCR10UM12

TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
ETC

BCR10UM8

TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB
ETC

BCR112

NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)
INFINEON