BCR10UM [MITSUBISHI]

MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE; 中功率使用绝缘型,玻璃钝化类型
BCR10UM
元器件型号: BCR10UM
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
中功率使用绝缘型,玻璃钝化类型

PDF文件: 总5页 (文件大小:58K)
下载文档:  下载PDF数据表文档文件
型号参数:BCR10UM参数

BCR10UM12

TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB

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7 ETC

BCR10UM-12

TRIAC, 600V V(DRM), 10A I(T)RMS, TO-220AB, TO-220, 3 PIN

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0 MITSUBISHI

BCR10UM8

TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB

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56 ETC

BCR112

NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)

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62 INFINEON

BCR112

NPN Silicon Digital Transistor

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78 INFINEON

BCR112

NPN Silicon Digital Transistor

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34 INFINEON

BCR112_07

NPN Silicon Digital Transistor

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16 INFINEON

BCR112E6327

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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0 INFINEON

BCR112E6327HTSA1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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0 INFINEON

BCR112E6433

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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1 INFINEON

BCR112F

NPN Silicon Digital Transistor

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13 INFINEON

BCR112F

NPN Silicon Digital Transistor

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14 INFINEON

BCR112F-E6327

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

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0 INFINEON

BCR112F-E6433

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

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0 INFINEON

BCR112L3

NPN Silicon Digital Transistor

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26 INFINEON