BCR10PNH6730XTMA1 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN;
| 型号： | BCR10PNH6730XTMA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SOT-363, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR10PN
NPN/PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
4
5
3
2
6
• Two (galvanic) internal isolated NPN/PNP
1
Transistors in one package
• Built in bias resistor NPN and PNP
(R =10 kΩ, R =10 kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
2
C1
6
B2
5
E2
4
R2
R1
TR2
TR1
R1
R2
1
2
3
E1
B1
C2
EHA07176
Tape loading orientation
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Top View
6 5 4
W1s
Position in tape: pin 1
opposite of feed hole side
1 2 3
Direction of Unreeling
EHA07193
Type
BCR10PN
Marking
W1s
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
Package
SOT363
Maximum Ratings for NPN and PNP Types
Parameter
Symbol
Value
Unit
50
50
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
V
V
V
V
CEO
CBO
i(fwd)
i(rev)
40
10
Input reverse voltage
100
250
150
mA
mW
°C
DC collector current
Total power dissipation, T = 115 °C
Junction temperature
Storage temperature
I
P
T
j
T
C
S
tot
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
≤ 140
K/W
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-22
1
BCR10PN
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
50
50
-
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
-
-
-
-
-
-
-
-
V
V
V
(BR)CEO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
(BR)CBO
C
E
Collector cutoff current
= 40 V, I = 0
I
100 nA
0.75 mA
CBO
V
CB
E
-
Emitter cutoff current
= 10 V, I = 0
I
EBO
V
EB
C
30
-
-
DC current gain 1)
I = 5 mA, V = 5 V
h
-
FE
C
CE
0.3
V
Collector-emitter saturation voltage1)
I = 10 mA, I = 0.5 mA
V
CEsat
i(off)
C
B
Input off voltage
I = 100 µA, V = 5 V
V
V
0.8
1
-
-
1.5
2.5
C
CE
Input on Voltage
I = 2 mA, V = 0.3 V
i(on)
C
CE
7
0.9
10
1
13
1.1
Input resistor
Resistor ratio
R
R /R
kΩ
-
1
1
2
AC Characteristics for NPN and PNP Types
Transition frequency
-
-
130
3
-
-
MHz
pF
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300µs; D < 2%
2011-09-22
2
BCR10PN
NPN Type
DC Current Gain h = f (I )
Collector-Emitter Saturation Voltage
FE
C
V
= 5V (common emitter configuration)
V
= f (I ), h = 20
CE
CEsat
C
FE
10 3
0.5
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.4
0.35
0.3
10 2
0.25
0.2
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 1
0.15
0.1
0.05
0
10 0
10 -4
10 -3
10 -2
10 -1
10 -3
10 -2
10 -1
A
A
I
I
C
C
Input on Voltage V
= f (I )
Input off voltage V
= f (I )
i(on)
C
i(off) C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 1
10 2
V
-40 °C
-25 °C
25 °C
85 °C
V
125 °C
10 1
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10 0
10 -1
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
A
A
I
I
C
C
2011-09-22
3
BCR10PN
PNP Type
DC Current Gain h = f (I )
Collector-Emitter Saturation Voltage
FE
C
V
= 5V (common emitter configuration)
V
= f (I ), h = 20
CE
CEsat C FE
10 3
1
V
-40°C
-25°C
25°C
85°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
125°C
10 2
10 1
10 0
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 -4
10 -3
10 -2
10 -1
10 -3
10 -2
10 -1
A
I
C
Input on Voltage V
= f (I )
Input off voltage V
= f (I )
i(on)
C
i(off) C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 1
10 2
V
-40 °C
-25 °C
25 °C
85 °C
V
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 1
10 0
10 0
10 -1
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
10 -5
10 -4
10 -3
10 -2
10 -1
A
A
I
I
C
C
2011-09-22
4
BCR10PN
Total power dissipation P = f (T )
tot
S
300
mW
250
225
200
175
150
125
100
75
50
25
0
°C
0
15 30 45 60 75 90 105 120
150
T
S
Permissible Pulse Load R
= f (t )
Permissible Pulse Load
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-09-22
5
Package SOT363
BCR10PN
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
M
0.1
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2011-09-22
6
BCR10PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-22
7
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