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BC856U [INFINEON]

PNP Silicon AF Transistor Array; PNP硅AF晶体管阵列
BC856U
型号： BC856U
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistor Array
PNP硅AF晶体管阵列

晶体 小信号双极晶体管 光电二极管 放大器
文件： 总6页 (文件大小：60K)
中文：  中文翻译
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BC856U  
PNP Silicon AF Transistor Array  
4
For AF input stages and driver applications  
High current gain  
5
6
Low collector-emitter saturation voltage  
Two ( galvanic) internal isolated Transistors  
with good matching in one package  
3
2
1
VPW09197  
C1  
6
B2  
5
E2  
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07175  
Type  
Marking  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SC74  
BC856U  
3Ds  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
V
V
V
V
65  
80  
V
CEO  
CBO  
CES  
EBO  
80  
5
I
100  
mA  
C
Peak collector current  
I
200  
CM  
Total power dissipation, T = 118 °C  
P
250  
mW  
°C  
S
tot  
Junction temperature  
Storage temperature  
T
150  
j
T
-65 ... 150  
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
130  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-29-2001  
BC856U  
Electrical Characteristics at T =25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
65  
80  
80  
5
max.  
DC Characteristics per Transistor  
Collector-emitter breakdown voltage  
V
V
V
V
-
-
-
-
-
-
-
-
V
(BR)CEO  
(BR)CBO  
(BR)CES  
(BR)EBO  
I = 10 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
C
E
Collector-emitter breakdown voltage  
I = 10 µA, V = 0  
-
C
BE  
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
-
E
C
Collector cutoff current  
= 30 V, I = 0  
I
-
15  
5
nA  
µA  
CBO  
V
CB  
E
Collector cutoff current  
= 30 V, I = 0 , T = 150 °C  
I
-
CBO  
V
CB  
E
A
DC current gain 1)  
I = 10 µA, V = 5 V  
h
-
FE  
-
250  
290  
-
C
CE  
I = 2 mA, V = 5 V  
200  
475  
C
CE  
Collector-emitter saturation voltage1)  
I = 10 mA, I = 0.5 mA  
V
mV  
CEsat  
BEsat  
-
-
90  
300  
650  
C
B
I = 100 mA, I = 5 mA  
250  
C
B
Base-emitter saturation voltage 1)  
I = 10 mA, I = 0.5 mA  
V
V
-
-
700  
850  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter voltage 1)  
I = 2 mA, V = 5 V  
BE(ON)  
600  
-
650  
-
750  
820  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1) Pulse test: t < 300 s; D < 2%  
2
Nov-29-2001  
BC856U  
Electrical Characteristics at T = 25 °C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC characteristics  
Transition frequency  
f
-
-
-
-
-
-
-
-
250  
3
-
-
MHz  
pF  
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
C
8
-
eb  
V
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
4.5  
2
-
k
11e  
C
CE  
-4  
Open-circuit reverse voltage transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
h
-
10  
12e  
C
CE  
Short-circuit forward current transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
h
330  
30  
-
-
-
21e  
C
CE  
Open-circuit output admittance  
h
-
S
22e  
I = 2 mA, V = 5 V, f = 1 kHz  
C
CE  
Noise figure  
F
10  
dB  
I = 200 µA, V = 5 V, R = 2 k ,  
C
CE  
S
f = 1 kHz, f = 200 Hz  
3
Nov-29-2001  
BC856U  
Total power dissipation P = f (T )  
tot  
S
300  
mW  
200  
150  
100  
50  
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T
S
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load  
thJS  
p
P
/ P  
= f (t )  
totmax  
totDC  
p
10 3  
K/W  
10 3  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 2  
10 1  
10 0  
0.2  
0.5  
10 1  
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 -1  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
4
Nov-29-2001  
BC856U  
Transition frequency f = f (I )  
Collector-base capacitance C = f (V  
)
CBO  
T
C
CB  
V
= 5V  
Emitter-base capacitance C = f (V  
)
EBO  
CE  
EB  
EHP00378  
103  
EHP00376  
12 BC 856...860  
pF  
CCB0  
CEB0  
MHz  
5
f T  
(
)
10  
8
CEBO  
102  
5
6
4
CCBO  
2
101  
0
10-1  
5
10 0  
5
101  
10 2  
mA  
10 -1  
5
10 0  
101  
V
( )  
VCB0 VEB0  
Ι C  
Collector-emitter saturation voltage  
Collector cutoff current I  
= f (T )  
A
CBO  
I = f (V  
), h = 20  
FE  
V
= 30V  
C
CEsat  
CB  
EHP00380  
EHP00381  
10 2  
10 4  
nA  
mA  
Ι C  
ΙCB0  
10 3  
5
100 C  
25 C  
-50 C  
101  
5
max  
10 2  
5
typ  
101  
5
100  
5
100  
5
10 -1  
10 -1  
0
0
50  
100  
150  
C
0.1  
0.2  
0.3  
0.4  
V
0.5  
TA  
VCEsat  
5
Nov-29-2001  
BC856U  
Base-emitter saturation voltage  
DC current gain h = f (I )  
FE  
C
I = f (V  
), h = 20  
FE  
V
= 5V  
C
BEsat  
CE  
EHP00379  
EHP00382  
102  
103  
mA  
5
100 C  
25 C  
Ι C  
hFE  
100  
25  
-50  
C
C
C
-50  
C
101  
5
102  
5
101  
5
100  
5
100  
10-1  
0
10-2  
5 10 -1  
5 10 0  
5 101  
10 2  
0.2  
0.4  
0.6  
0.8  
V
1.2  
mA  
Ι C  
VBEsat  
6
Nov-29-2001  

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