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BC856UE6327HTSA1 [INFINEON]

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN;
BC856UE6327HTSA1
型号： BC856UE6327HTSA1
厂家： Infineon    Infineon
描述：

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN

放大器 光电二极管 晶体管
文件： 总10页 (文件大小：850K)
中文：  中文翻译
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BC856S/U_BC857S  
PNP Silicon AF Transistor Arrays  
• For AF input stages and driver applications  
• High current gain  
• Low collector-emitter saturation voltage  
• Two (galvanic) internal isolated transistor  
with good matching in one package  
• BC856S / U, BC857S: For orientation in reel see  
package information below  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
BC856S/U  
BC857S  
C1  
B2  
E2  
6
5
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07175  
Type  
Marking  
3Ds  
3Ds  
Pin Configuration  
Package  
BC856S  
BC856U  
BC857S  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
3Cs  
2011-07-25  
1
BC856S/U_BC857S  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
-
Collector-emitter voltage  
BC856S/U  
BC857S  
V
V
V
CEO  
CBO  
EBO  
tot  
65  
45  
V
Collector-base voltage  
BC856S, BC856U  
BC857S  
80  
50  
5
100  
200  
Emitter-base voltage  
Collector current  
mA  
-
I
C
Peak collector current, t ≤ 10 ms  
I
CM  
P
p
Total power dissipation-  
T ≤ 115 °C, BC856S  
250  
250  
150  
S
T ≤ 118 °C, BC856U, BC857U  
S
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
BC856S, BC857S  
BC856U  
≤ 140  
≤ 130  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-25  
2
BC856S/U_BC857S  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
V
-
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 10 mA, I = 0 , BC856S/U  
65  
45  
-
-
-
-
C
B
I = 10 mA, I = 0 , BC857S  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0 , BC856S/U  
80  
50  
-
-
-
-
C
E
I = 10 µA, I = 0 , BC857S  
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
5
-
-
V
E
C
Collector-base cutoff current  
I
µA  
CBO  
V
V
= 45 V, I = 0  
-
-
-
-
0.015  
5
CB  
CB  
E
= 45 V, I = 0 , T = 150 °C  
E
A
1)  
-
DC current gain  
I = 10 µA, V = 5 V  
h
FE  
-
250  
290  
-
C
CE  
I = 2 mA, V = 5 V  
200  
630  
C
CE  
1)  
Collector-emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
V
mV  
-
CEsat  
-
-
75  
250  
300  
650  
C
B
I = 100 mA, I = 5 mA  
C
B
1)  
Base emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
V
BEsat  
-
-
700  
850  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
1)  
Base-emitter voltage  
I = 2 mA, V = 5 V  
V
mV  
BE(ON)  
600  
-
650  
-
750  
820  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1
Pulse test: t < 300µs; D < 2%  
2011-07-25  
3
BC856S/U_BC857S  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
-
250  
1.5  
8
-
-
-
MHz  
pF  
Transition frequency  
f
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
-
-
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
eb  
V
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
h
h
h
F
-
-
-
-
-
4.5  
2
-
-
kΩ  
11e  
12e  
21e  
22e  
C
CE  
-4  
Open-circuit reverse voltage transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
10  
C
CE  
Short-circuit forward current transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
330  
30  
-
-
-
C
CE  
Open-circuit output admittance  
-
µS  
dB  
I = 2 mA, V = 5 V, f = 1 kHz  
C
CE  
10  
Noise figure  
I = 200 µA, V = 5 V, f = 1 kHz,  
C
CE  
∆ f = 200 Hz, R = 2 kΩ  
S
2011-07-25  
4
BC856S/U_BC857S  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5 V  
I = ƒ(V  
), h = 20  
CE  
C
CEsat FE  
EHP00382  
EHP00380  
103  
10 2  
mA  
5
100 C  
25 C  
Ι C  
h FE  
100 C  
25 C  
-50 C  
-50  
C
102  
5
101  
5
100  
5
101  
5
100  
10 -1  
0
10-2  
5 10 -1  
5 10 0  
5 101  
10 2  
0.1  
0.2  
0.3  
0.4  
V
0.5  
mA  
Ι C  
VCEsat  
Base-emitter saturation voltage  
Collector cutoff current I  
= ƒ(T )  
CBO A  
I = ƒ(V  
), h = 20  
V
= 30 V  
C
BEsat  
FE  
CBO  
EHP00379  
EHP00381  
102  
10 4  
nA  
mA  
Ι C  
ΙCB0  
10 3  
5
100  
25  
-50  
C
C
C
101  
5
max  
10 2  
5
typ  
10 1  
5
100  
5
100  
5
10 -1  
10-1  
0
0
50  
100  
150  
C
0.2  
0.4  
0.6  
0.8  
V
1.2  
TA  
VBEsat  
2011-07-25  
5
BC856S/U_BC857S  
Transition frequency f = ƒ(I )  
Collector-base capacitance C = ƒ(V  
)
T
C
cb  
CB  
V
= 5 V  
Emitter-base capacitance C = ƒ(V )  
CE  
eb EB  
EHP00378  
103  
12  
pF  
MHz  
5
f T  
10  
9
8
7
6
5
4
3
2
1
0
102  
5
CEB  
CCB  
22  
101  
10-1  
5
10 0  
5
101  
10 2  
V
0
4
8
12  
16  
mA  
V
(V  
Ι C  
CB EB  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BC856S, BC857S  
BC856U  
300  
mW  
300  
mW  
250  
225  
200  
175  
150  
125  
100  
75  
250  
225  
200  
175  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
15 30 45 60 75 90 105 120  
150  
T
T
S
S
2011-07-25  
6
BC856S/U_BC857S  
Permissible Pulse Load R  
BC856S; BC857S  
= ƒ(t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BC856S, BC857S  
10 3  
K/W  
10 3  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BC856U  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BC856U  
10 3  
K/W  
10 3  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 2  
10 1  
10 0  
0.2  
10 1  
10 0  
10 -1  
D=0.5  
0.2  
0.5  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2011-07-25  
7
Package SC74  
BC856S/U_BC857S  
Package Outline  
0.2  
2.9  
B
1.1 MAX.  
(2.25)  
+0.1  
0.15  
(0.35)  
-0.06  
6
1
5
2
4
3
+0.1  
A
0.35  
0.95  
-0.05  
M
0.2  
B 6x  
Pin 1  
marking  
0.1 MAX.  
M
0.2  
A
1.9  
Foot Print  
0.5  
0.95  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCW66H  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
3.15  
1.15  
Pin 1  
marking  
2011-07-25  
8
Package SOT363  
BC856S/U_BC857S  
Package Outline  
0.2  
2
0.1  
0.9  
+0.1  
-0.05  
6x  
0.2  
0.1 MAX.  
0.1  
M
0.1  
A
6
1
5
4
3
2
Pin 1  
marking  
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.3  
0.65  
0.65  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCR108S  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
1.1  
2.15  
Pin 1  
marking  
2011-07-25  
9
BC856S/U_BC857S  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-07-25  
10  

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