BC856UE6327 [INFINEON]
Transistor;BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistor
with good matching in one package
• BC856S / U, BC857S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC856S/U
BC857S
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
Marking
3Ds
3Ds
Pin Configuration
Package
BC856S
BC856U
BC857S
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
3Cs
2011-07-25
1
BC856S/U_BC857S
Maximum Ratings
Parameter
Symbol
Value
Unit
-
Collector-emitter voltage
BC856S/U
BC857S
V
V
V
CEO
CBO
EBO
tot
65
45
V
Collector-base voltage
BC856S, BC856U
BC857S
80
50
5
100
200
Emitter-base voltage
Collector current
mA
-
I
C
Peak collector current, t ≤ 10 ms
I
CM
P
p
Total power dissipation-
T ≤ 115 °C, BC856S
250
250
150
S
T ≤ 118 °C, BC856U, BC857U
S
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BC856S, BC857S
BC856U
≤ 140
≤ 130
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-07-25
2
BC856S/U_BC857S
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
-
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BC856S/U
65
45
-
-
-
-
C
B
I = 10 mA, I = 0 , BC857S
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC856S/U
80
50
-
-
-
-
C
E
I = 10 µA, I = 0 , BC857S
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
V
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 45 V, I = 0
-
-
-
-
0.015
5
CB
CB
E
= 45 V, I = 0 , T = 150 °C
E
A
1)
-
DC current gain
I = 10 µA, V = 5 V
h
FE
-
250
290
-
C
CE
I = 2 mA, V = 5 V
200
630
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
mV
-
CEsat
-
-
75
250
300
650
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
BEsat
-
-
700
850
-
-
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base-emitter voltage
I = 2 mA, V = 5 V
V
mV
BE(ON)
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1
Pulse test: t < 300µs; D < 2%
2011-07-25
3
BC856S/U_BC857S
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
h
h
h
F
-
-
-
-
-
4.5
2
-
-
kΩ
11e
12e
21e
22e
C
CE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
10
C
CE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz
330
30
-
-
-
C
CE
Open-circuit output admittance
-
µS
dB
I = 2 mA, V = 5 V, f = 1 kHz
C
CE
10
Noise figure
I = 200 µA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ
S
2011-07-25
4
BC856S/U_BC857S
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 20
CE
C
CEsat FE
EHP00382
EHP00380
103
10 2
mA
5
100 C
25 C
Ι C
h FE
100 C
25 C
-50 C
-50
C
102
5
101
5
100
5
101
5
100
10 -1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.1
0.2
0.3
0.4
V
0.5
mA
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CBO
EHP00379
EHP00381
102
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
10 1
5
100
5
100
5
10 -1
10-1
0
0
50
100
150
C
0.2
0.4
0.6
0.8
V
1.2
TA
VBEsat
2011-07-25
5
BC856S/U_BC857S
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
T
C
cb
CB
V
= 5 V
Emitter-base capacitance C = ƒ(V )
CE
eb EB
EHP00378
103
12
pF
MHz
5
f T
10
9
8
7
6
5
4
3
2
1
0
102
5
CEB
CCB
22
101
10-1
5
10 0
5
101
10 2
V
0
4
8
12
16
mA
V
(V
Ι C
CB EB
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC856S, BC857S
BC856U
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
15 30 45 60 75 90 105 120
150
T
T
S
S
2011-07-25
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BC856S/U_BC857S
Permissible Pulse Load R
BC856S; BC857S
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC856S, BC857S
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
BC856U
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC856U
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.2
10 1
10 0
10 -1
D=0.5
0.2
0.5
0.1
0.05
0.02
0.01
0.005
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-07-25
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Package SC74
BC856S/U_BC857S
Package Outline
0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
0.15
(0.35)
-0.06
6
1
5
2
4
3
+0.1
A
0.35
0.95
-0.05
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
2011-07-25
8
Package SOT363
BC856S/U_BC857S
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2011-07-25
9
BC856S/U_BC857S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-07-25
10
相关型号:
BC856UE6327HTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN
INFINEON
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