BAS125-04W [INFINEON]
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application); 初步数据硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用）
| 型号： | BAS125-04W |
| 厂家： | 
Infineon |
| 描述： | Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
| 文件： | 总5页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS 125W
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
Package
BAS 125-04W
BAS 125-05W
BAS 125-06W
BAS 125W
14s
15s
16s
13s
Q62702-
Q62702-
Q62702-
Q62702-
1 = A1
1 = A1
1 = C1
1 = A
2 = C2
2 = A2
2 = C2
3=C1/A2 SOT-323
3=C1/C2 SOT-323
3=A1/A2 SOT-323
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
25
Unit
V
Diode reverse voltage
Forward current
V
R
I
I
100
mA
F
≤ 10
Surge forward current (t
Total Power dissipation
ms)
500
FSM
P
tot
mW
°C
≤
T
25 °C
250
150
S
Junction temperature
Storage temperature
T
T
j
- 55 ... + 150
stg
Thermal Resistance
≤
≤
Junction ambient, BAS125W 1)
R
thJA
R
thJA
R
thJS
R
thJS
310
425
K/W
Junction ambient, BAS 125-04W...06W 1)
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
≤ 230
≤
265
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
BAS 125W
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Reverse current
I
nA
R
V = 20 V
-
-
-
-
150
200
R
V = 25 V
R
Forward voltage
V
F
mV
I = 1 mA
-
-
-
385
530
800
400
650
900
F
I = 10 mA
F
I = 35 mA
F
AC Characteristics
Diode capacitance
C
R
pF
T
V = 0 V, f = 1 MHz
R
-
-
-
1.1
-
Differential forward resistance
Ω
F
I = 5 mA, f = 10 kHz
F
16
Semiconductor Group
2
Dec-20-1996
BAS 125W
Forward current I = f (T *;T )
F
A
S
* Package mounted on epoxy
BAS 125W
100
mA
80
IF
TS
70
60
50
40
30
20
TA
10
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f(t )
Permissible Pulse Load I
/I
= f(t )
THJS
p
Fmax FDC
p
BAS 125W
BAS 125W
10 2
10 3
K/W
RthJS
IFmax/IFDC
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.2
0.5
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
3
Dec-20-1996
BAS 125W
Forward current I = f (T *;T )
F
A
S
* Package mounted on epoxy
BAS 125-04W... (I per diode)
F
100
mA
80
IF
TS
70
60
50
40
30
20
TA
10
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f(t )
Permissible Pulse Load I
/I
= f(t )
THJS
p
Fmax FDC
p
BAS 125-04W...
BAS 125-04W...
10 2
10 3
K/W
RthJS
IFmax/IFDC
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.2
0.5
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
4
Dec-20-1996
BAS 125W
Forward Current I = f(V )
Diode capacitance C = f (V )
T R
F
F
f = 1MHz
Reverse current I = f (V )
Differential forward resistance R = f(I )
F F
R
R
f = 10kHz
T = Parameter
A
Semiconductor Group
5
Dec-20-1996
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