AUIRFR9024NTR [INFINEON]
HEXFET® Power MOSFET;
| 型号： | AUIRFR9024NTR |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：1086K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96351
AUTOMOTIVE GRADE
AUIRFR9024N
AUIRFU9024N
Features
AdvancedPlanarTechnology
HEXFET® Power MOSFET
LowOn-Resistance
P-Channel
D
S
l
V(BR)DSS
-55V
0.175
Dynamic dV/dT Rating
150°COperatingTemperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
RDS(on) max.
ID
Ω
G
-11A
Lead-Free,RoHSCompliant
Automotive Qualified *
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
S
S
D
G
D
G
I-Pak
D-Pak
AUIRFR9024N
AUIRFU9024N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Max.
-11
Units
I
I
I
@ T = 25°C
C
D
D
-8
-44
A
@ T = 100°C
C
DM
38
Power Dissipation
W
W/°C
V
P
@T = 25°C
C
D
0.30
± 20
62
Linear Derating Factor
Gate-to-Source Voltage
V
EAS
IAR
GS
Single Pulse Avalanche Energy(Thermally limited)
Avalanche Current
mJ
A
-6.6
EAR
dv/dt
3.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
-10
V/ns
-55 to + 150
T
T
J
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
STG
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
3.3
Units
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
50
°C/W
**
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/11
AUIRFR/U9024N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
-55
–––
–––
-2.0
2.5
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
V
∆ ∆
V(BR)DSS/ TJ
–––
RDS(on)
VGS(th)
Ω
V
0.175
-4.0
–––
VGS = -10V, ID = -6.6A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
gfs
Forward Transconductance
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
-25
µA
V
V
DS = -55V, VGS = 0V
-250
100
DS = -44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = -20V
GS = 20V
-100
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
19
ID = -7.2A
5.1
10
nC
ns
V
DS = -44V
VGS = -10V,See Fig 6 and 13
VDD = -28V
–––
–––
–––
–––
55
ID = -7.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
23
RG = 24 Ω
Ω,
37
RD = 3.7 See Fig.10
D
S
LD
Internal Drain Inductance
Between lead,
–––
–––
4.5
7.5
–––
–––
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
and center of die contact
VGS = 0V
DS = -25V
ƒ = 1.0MHz,see Fig.5
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
350
170
92
–––
–––
–––
Output Capacitance
V
pF
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
MOSFET symbol
S
–––
–––
-11
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
SM
–––
–––
-44
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
47
-1.6
71
V
T = 25°C, I = -7.2A, V = 0V
J S GS
SD
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = -7.2A
J F
rr
di/dt = 100A/µs
Q
t
84
130
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 2.8mH
RG = 25Ω, IAS = -6.6A (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -240A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
Uses IRF9Z24N data and test conditions.
,
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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AUIRFR/U9024N
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
MSL1
N/A
D PAK
I-PAK
Moisture Sensitivity Level
Class M2(+/-150V )†††
Machine Model
AEC-Q101-002
Class H1A(+/-500V )†††
AEC-Q101-001
Human Body Model
ESD
Class C5(+/-2000V )†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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AUIRFR/U9024N
4
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AUIRFR/U9024N
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AUIRFR/U9024N
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AUIRFR/U9024N
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AUIRFR/U9024N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For P Channel HEXFETS
8
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AUIRFR/U9024N
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUFR9024N
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR/U9024N
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUFU9024N
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U9024N
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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AUIRFR/U9024N
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFR9024N
DPak
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
75
AUIRFR9024N
AUIRFR9024NTR
AUIRFR9024NTRL
AUIRFR9024NTRR
AUIRFU9024N
2000
3000
3000
75
AUIRFU9024N
IPak
12
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AUIRFR/U9024N
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therighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservices
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’s
standardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupportthis
warranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarily
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