AUIRFS3004 [INFINEON]
Advanced Process Technology Ultra Low On-Resistance; 先进的工艺技术超低导通电阻
| 型号： | AUIRFS3004 |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology Ultra Low On-Resistance |
| 文件： | 总13页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96400A
AUTOMOTIVE GRADE
AUIRFS3004
AUIRFSL3004
HEXFET® Power MOSFET
40V
Features
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
D
S
l
l
l
l
l
l
VDSS
RDS(on) typ.
max.
1.4m
1.75m
Ω
Ω
G
ID
340A
(Silicon Limited)
ID
195A
(Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
siliconarea. Additionalfeaturesofthisdesign area175°C
junctionoperatingtemperature, fastswitchingspeedand
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
D
D
S
S
D
G
G
D2Pak
AUIRFS3004
TO-262
AUIRFSL3004
wide variety of other applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)
is 25°C, unless otherwise specified.
Parameter
Max.
340
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
240
195
1310
Pulsed Drain Current
PD @TC = 25°C
W
380
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
2.5
W/°C
V
VGS
± 20
4.4
300
Peak Diode Recovery
Single Pulse Avalanche Energy
dv/dt
EAS (Thermally limited)
V/ns
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b
Repetitive Avalanche Energy
EAR
TJ
mJ
-55 to + 175
300
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.40
40
Units
RθJC
Junction-to-Case
°C/W
Junction-to-Ambient (PCB Mount) , D2Pak
RθJA
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/4/11
AUIRFS/SL3004
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.037 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
V
–––
2.0
1.4 1.75
––– 4.0
VGS = 10V, ID = 195A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 195A
VDS = 40V, VGS = 0V
mΩ
V
gfs
IDSS
Forward Transconductance
1170 ––– –––
––– ––– 20
S
Drain-to-Source Leakage Current
μA
––– ––– 250
––– ––– 100
––– ––– -100
V
V
V
DS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
GS = -20V
–––
2.2
–––
Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
––– 160 240
Conditions
Qg
Total Gate Charge
ID = 187A
DS =20V
Qgs
Gate-to-Source Charge
–––
–––
–––
–––
40
68
92
23
–––
–––
–––
–––
V
nC
ns
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
VGS = 10V
Qsync
ID = 187A, VDS =0V, VGS = 10V
VDD = 26V
td(on)
Turn-On Delay Time
tr
Rise Time
––– 220 –––
––– 90 –––
ID = 195A
td(off)
Turn-Off Delay Time
R = 2.7
Ω
G
tf
Fall Time
––– 130 –––
––– 9200 –––
––– 2020 –––
––– 1340 –––
––– 2440 –––
––– 2690 –––
VGS = 10V
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0 MHz, See Fig. 5
pF
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 32V, See Fig. 11
GS = 0V, VDS = 0V to 32V
V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
MOSFET symbol
––– ––– 340
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 1310
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
–––
–––
–––
V
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
–––
–––
–––
–––
–––
27
31
18
41
1.2
ns
IF = 195A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.016mH,RG = 25Ω,
IAS = 195A, VGS =10V. Part not recommended for use above
this value .
ISD ≤ 195A, di/dt ≤ 930A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
2
www.irf.com
AUIRFS/SL3004
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part
number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
N/A
3L-D2 PAK
3L-TO-262
Moisture Sensitivity Level
Class M4(+/- 800V )†††
Machine Model
AEC-Q101-002
Class H3A(+/- 6000V )†††
AEC-Q101-001
ESD
Human Body Model
Class C5(+/- 2000V )†††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
www.irf.com
3
AUIRFS/SL3004
10000
10000
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
1000
100
10
BOTTOM
BOTTOM
4.5V
4.5V
60μs PULSE WIDTH
Tj = 175°C
60μs PULSE WIDTH
≤
≤
Tj = 25°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 195A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60μs PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 187A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
V
V
= 32V
= 20V
= C + C
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
AUIRFS/SL3004
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
1
10
, Drain-to-Source Voltage (V)
100
0.0
0.5
1.0
1.5
2.0
V
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
48
46
44
42
40
350
300
250
200
150
100
50
Id = 5mA
Limited By Package
0
-60 -40 -20 0 20 40 60 80 100120140160180
25
50
75
100
125
150
175
T
, Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1400
I
D
1200
1000
800
600
400
200
0
TOP
30A
54A
BOTTOM 195A
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com
5
AUIRFS/SL3004
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.00646
0.10020
0.18747
0.10667
0.000005
0.000124
0.001374
0.008465
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
Δ
pulsewidth, tav, assuming Tj = 150°C and
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
Allowed avalanche Current vs avalanche
ΔΤ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
320
280
240
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1.0% Duty Cycle
= 195A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
40
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
AUIRFS/SL3004
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
9
I = 78A
F
V
= 34V
R
T = 25°C
J
8
T = 125°C
J
7
6
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
5
4
3
2
-75 -50 -25
0
25 50 75 100 125 150175 200
100
200
300
400
500
T , Temperature ( °C )
J
di /dt (A/μs)
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
350
11
I = 78A
I = 117A
F
F
10
V = 34V
V
= 34V
R
300
250
200
150
100
50
R
9
8
7
6
5
4
3
2
1
T = 25°C
J
T = 25°C
J
T = 125°C
T = 125°C
J
J
100
200
300
400
500
100
200
300
400
500
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
400
I = 117A
F
V
350
300
250
200
150
100
50
= 34V
R
T = 25°C
J
T = 125°C
J
0
100
200
300
400
500
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
7
AUIRFS/SL3004
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
www.irf.com
AUIRFS/SL3004
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
PartNumber
AUFS3004
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFS/SL3004
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUFSL3004
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRFS/SL3004
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
www.irf.com
11
AUIRFS/SL3004
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFSL3004
AUIRFS3004
TO-262
D2Pak
Tube
Tube
50
50
AUIRFSL3004
AUIRFS3004
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS3004TRL
AUIRFS3004TRR
12
www.irf.com
AUIRFS/SL3004
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provideadequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations
isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthird
parties may be subject to additional restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservice
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
www.irf.com
13
相关型号：
AUIRFS3006
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
AUIRFS3006TRL
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明