AUIRFR8405 [INFINEON]
Advanced Process Technology, New Ultra Low On-Resistance; 先进的工艺技术，新型超低导通电阻
| 型号： | AUIRFR8405 |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology, New Ultra Low On-Resistance |
| 文件： | 总13页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRFR8405
AUIRFU8405
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
VDSS
40V
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
max.
1.65mΩ
1.98m
211A
Ω
ID
(Silicon Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
foruseinAutomotiveapplicationsandwidevarietyofotherapplications.
ID
100A
(Package Limited)
D
S
D
D
S
S
G
D
G
Applications
G
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
D-Pak
AUIRFR8405
I-Pak
AUIRFU8405
G
Gate
D
Drain
S
Source
Ordering Information
Base part
Package Type
Standard Pack
Form
Tube
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR8405
DPak
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
AUIRFU8405
IPak
75
AbsoluteMaximumRatings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthespecificationsisnotimplied. Exposuretoabsolute-maximum-ratedconditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
211
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
150
A
100
804
163
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.1
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
208
256
EAS (Thermally limited)
Single Pulse Avalanche Energy
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
See Fig. 14, 15, 24a, 24b
A
Avalanche Current
EAR
mJ
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
Max.
0.92
50
Units
Rθ
Rθ
Rθ
Junction-to-Case
JC
JA
JA
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
*Qualificationstandardscanbefoundathttp://www.irf.com/
1
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
––– –––
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.03 ––– V/°C Reference to 25°C, ID = 5mA
Ω
V
m
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 1.65 1.98
2.2 3.0 3.9
VGS = 10V, ID = 90A**
VDS = VGS, ID = 100μA
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.3 –––
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
V
GS = 20V
nA
VGS = -20V
Ω
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
294 ––– –––
S
VDS = 10V, ID = 90A**
Qg
Total Gate Charge
––– 103 155
ID = 90A **
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
26
38
65
12
80
51
51
–––
–––
–––
–––
–––
–––
–––
VDS =20V
nC
V
GS = 10V
ID = 90A **, VDS =0V, VGS = 10V
DD = 26V
V
ID = 90A**
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 5171 –––
––– 770 –––
––– 523 –––
––– 939 –––
––– 1054 –––
Output Capacitance
Reverse Transfer Capacitance
pF ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
––– ––– 211
A
(Body Diode)
Pulsed Source Current
showing the
G
ISM
integral reverse
––– ––– 804
(Body Diode)
p-n junction diode.
VSD
dv/dt
trr
Diode Forward Voltage
––– 0.9
1.3
V
TJ = 25°C, IS = 90A** , VGS = 0V
Peak Diode Recovery
––– 2.1 ––– V/ns TJ = 175°C, IS = 90A**, VDS = 40V
Reverse Recovery Time
–––
–––
–––
–––
28
29
19
20
–––
–––
–––
–––
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
ns
IF = 90A**
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
IRRM
––– 1.1 –––
Notes:
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 100A by source
bonding technology. Note that current limitations arising from heating
of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
.
.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.051mH, RG = 50Ω,
IAS = 90A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 90A, di/dt ≤ 1304A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
** All AC and DC test condition based on old Package
limitation current = 90A.
2
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
TOP
TOP
BOTTOM
BOTTOM
4.8V
4.8V
60μs
≤
PULSE WIDTH
60μs
≤
PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.0
1.6
1.2
0.8
0.4
I
= 90A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 90A
V
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
= 32V
= 20V
DS
= C + C
ds
gd
V
DS
C
C
iss
C
6.0
oss
rss
4.0
2.0
100
0.0
0.1
1
10
100
0
20
40
60
80
100 120 140
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
April 30, 2013
AUIRFR/U8405
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
10msec
T = 25°C
J
Limited by Package
1msec
1
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
240
210
180
150
120
90
48
47
46
45
44
43
42
41
40
Id = 5.0mA
Limited By Package
60
30
0
25
50
75
100
125
150
175
-60
-20
20
60
100
140
180
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
900
800
700
600
500
400
300
200
100
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
D
18A
37A
TOP
BOTTOM 90A
25
50
75
100
125
150
175
-5
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
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April 30, 2013
AUIRFR/U8405
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
Δ
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
ΔΤ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
250
200
150
100
50
TOP
BOTTOM 1.0% Duty Cycle
= 90A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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April 30, 2013
AUIRFR/U8405
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8.0
6.0
4.0
2.0
0.0
I
= 90A
D
T
T
= 125°C
= 25°C
J
J
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
4
6
8
10 12 14 16
18 20
-75
-25
T
25
75
125
175
225
, Temperature ( °C )
J
V
Gate -to -Source Voltage (V)
GS,
Fig 16. On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
120
110
100
90
9
I = 36A
F
I = 36A
F
8
V
= 34V
V
= 34V
R
R
T = 25°C
7
6
5
4
3
2
1
0
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
80
70
60
50
40
30
20
10
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
8
100
80
60
40
20
0
I = 90A
F
I = 90A
F
7
6
5
4
3
2
1
0
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
6
www.irf.com © 2013 International Rectifier
AUIRFR/U8405
9.0
6.0
3.0
0.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0
100
200
300
400
500
I , Drain Current (A)
D
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
•
dv/dt controlled by RG
• Driver same type as D.U.T.
RG
+
-
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier
Fig 26b. Gate Charge Waveform
8
April 30, 2013
AUIRFR/U8405
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUIRFR8405
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUIRFU8405
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
3L-D-PAK
I-PAK
MSL1
N/A
Moisture Sensitivity Level
Class M3 (+/- 400)††
AEC-Q101-002
Machine Model
Class H1C (+/- 2000)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
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© 2013 International Rectifier
April 30, 2013
AUIRFR/U8405
IMPORTANTNOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
13
www.irf.com
© 2013 International Rectifier
April 30, 2013
相关型号：
AUIRFR9024NTRL
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
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