AUIRF4104STRL [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF4104STRL |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总15页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97471A
AUTOMOTIVE GRADE
AUIRF4104
AUIRF4104S
Features
O
O
O
O
O
O
Low On-Resistance
HEXFET® Power MOSFET
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
V(BR)DSS
D
40V
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
4.3m
5.5m
120A
75A
Ω
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Ω
G
O
O
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speedandimprovedrepetitiveavalancherating.These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D2Pak
AUIRF4104S
TO-220AB
AUIRF4104
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
I
Max.
120
84
Units
A
75
470
140
Pulsed Drain Current
@T = 25°C
Power Dissipation
C
DM
P
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.95
± 20
W/°C
V
V
GS
Single Pulse Avalanche Energy (Thermally Limited)
EAS
120
220
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (tested )
IAR
EAR
T
J
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.05
–––
40
Units
°C/W
Junction-to-Case
RθJC
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
0.50
–––
Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Note to are on page 3
www.irf.com
1
3/29/10
AUIRF4104/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
Δ
Δ
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
4.3
–––
–––
–––
–––
–––
5.5
4.0
–––
20
VGS = 10V, ID = 75A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 75A
Forward Transconductance
63
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA
V
DS = 40V, VGS = 0V
250
200
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
68
100
–––
–––
–––
–––
–––
–––
–––
ID = 75A
21
nC
ns
VDS = 32V
27
VGS = 10V
VDD = 20V
ID = 75A
16
130
38
Ω
RG = 6.8
VGS = 10V
td(off)
tf
Turn-Off Delay Time
Fall Time
77
D
S
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 3000 –––
VGS = 0V
VDS = 25V
Coss
Output Capacitance
–––
–––
660
380
–––
–––
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
––– 2160 –––
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
560
850
–––
–––
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
470
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
23
1.3
35
10
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A, VDD = 20V
J F
rr
di/dt = 100A/μs
Q
t
6.8
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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AUIRF4104/S
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
Moisture Sensitivity Level
TO-220AB
D2 PAK
N/A
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
ꢀ This value determined from sample failure population,
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.04mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
starting TJ = 25°C, L = 0.04mH, RG = 25Ω, IAS = 75A, VGS =10V
2
This is applied to D Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.(Refer to AN-1140
http://www.irf.com/technical-info/appnotes/an-1140.pdf)
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS
.
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3
AUIRF4104/S
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
20μs PULSE WIDTH
20μs PULSE WIDTH
Tj = 175°C
4.5V
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
T
= 25°C
T
= 25°C
J
J
100
80
60
40
20
0
T
= 175°C
J
100
10
1
T = 175°C
J
V
= 10V
V
= 15V
DS
380μs PULSE WIDTH
DS
20μs PULSE WIDTH
4
6
8
10
12
0
20
40
60
80
100
V
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRF4104/S
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 75A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
= 32V
= C
DS
VDS= 20V
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
T
= 25°C
100μsec
J
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
10msec
100
GS
1
0.1
0
1
10
1000
0.2
0.6
1.0
1.4
1.8
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
ance
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF4104/S
2.0
1.5
1.0
0.5
120
I
= 75A
LIMITED BY PACKAGE
D
V
= 10V
GS
100
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
1
0.1
D = 0.50
0.20
R1
R2
R2
R3
R3
0.10
0.05
Ri (°C/W) τi (sec)
R1
τ
J τJ
τ
τ
Cτ
0.371
0.337
0.337
0.000272
0.001375
0.018713
τ
1τ1
τ
0.02
0.01
2 τ2
3τ3
0.01
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF4104/S
500
400
300
200
100
0
15V
ID
11A
16A
TOP
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250μA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF4104/S
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
assuming ΔTj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
10
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
140
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
120
100
80
60
40
20
0
I
D
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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AUIRF4104/S
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF4104/S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF4104
YWWA
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
IR Logo
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF4104/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUF4104S
YWWA
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
IR Logo
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF4104/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package is not recommended for Surface Mount Application.
12
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AUIRF4104/S
Ordering Information
Base part number Package Type
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
AUIRF4104
AUIRF4104S
AUIRF4104S
AUIRF4104S
TO-220
D2Pak
AUIRF4104
AUIRF4104S
AUIRF4104STRL
AUIRF4104STRR
50
800
800
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13
AUIRF4104/S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is
an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implantintothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhich
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchaseoruseIRproductsforanysuchunintendedorunauthorizedapplication, Buyershallindemnifyandhold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless
the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products
designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such
use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
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AUIRF4104/S
Revision History
Date
Comments
2/5/2010
Revised with new AU template:
1)Add sentence below Absolute Max Rating
2)Update ESD by using ESD data and table from Anika
3)Update Part Marking drawing
4) Add Order Info table
5) Add Revision History
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15
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INFINEON
AUIRF5210STRL
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
INFINEON
AUIRF5210STRR
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
INFINEON
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