AUIRF5210S [INFINEON]
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2;
| 型号： | AUIRF5210S |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 |
| 文件： | 总12页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRF5210S
Features
HEXFET® Power MOSFET
l AdvancedPlanarTechnology
l P-ChannelMOSFET
l LowOn-Resistance
D
V(BR)DSS
-100V
60m
l
Dynamic dV/dT Rating
RDS(on) max.
ID
G
l 175°COperatingTemperature
l Fast Switching
S
-38A
l
Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free,RoHSCompliant
l Automotive Qualified *
D
Description
S
SpecificallydesignedforAutomotiveapplications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
otherapplications.
D
G
D2Pak
AUIRF5210S
G
Gate
D
S
Drain
Source
AbsoluteMaximumRatings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
-38
Units
I
I
I
@ TC = 25°C
@ TC = 100°C
A
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
D
-24
D
-140
3.1
DM
P
P
@TA = 25°C
@TC = 25°C
Maximum Power Dissipation
W
D
Maximum Power Dissipation
170
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1.3
± 20
W/°C
V
V
GS
EAS
IAR
120
-23
17
mJ
A
Repetitive Avalanche Energy
EAR
dv/dt
mJ
Peak Diode Recovery dv/dt
Operating Junction and
-7.4
V/ns
°C
T
T
-55 to + 150
J
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
Typ.
Max.
0.75
40
Units
Junction-to-Case
R
R
–––
–––
°C/W
JC
JA
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/20/2012
AUIRF5210S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-100 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
VDSS/TJ
RDS(on)
VGS(th)
V
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
Static Drain-to-Source On-Resistance –––
–––
–––
–––
–––
60
-4.0
–––
-50
VGS = 10V, ID = -38A
m
V
Gate Threshold Voltage
-2.0
9.5
VDS = VGS, ID = -250μA
VGS(th)
Forward Transconductance
Drain-to-Source Leakage Current
S
VDS = -50V, ID = -23A
IDSS
–––
–––
–––
–––
μA VDS = -100V, VGS = 0V
––– -250
––– 100
––– -100
VDS = -80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
4.5
230
33
nC ID = -23A
VDS = -80V
VGS = -10V
ns VDD = -50V
ID = -23A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
120
–––
–––
–––
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.4
VGS = -10V
LD
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2780 –––
pF
Output Capacitance
–––
–––
800
430
–––
–––
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-38
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
––– -140
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
T = 25°C, I = -23A, V = 0V
–––
–––
–––
170
-1.6
260
V
J
S
GS
trr
Qrr
ton
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
T = 25°C, I = -23A, VDD = -25V
J F
di/dt = -100A/μs
ns
nC
––– 1180 1770
Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
Notes:
Pulse width 300µs; duty cycle 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting TJ = 25°C, L = 0.46mH
RG = 25, IAS = -23A. (See Figure 12)
ISD -23A, di/dt -650A/µs, VDD V(BR)DSS
TJ 150°C.
ꢀ When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C
,
2
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08/20/2012
AUIRF5210S
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D2Pak
Moisture Sensitivity Level
MSL1
Class M4 (+/- 425V )††
Machine Model
AEC-Q101-002
Class H2 (+/- 4000V )††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V )††
AEC-Q101-005
Charged Device Model
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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3
08/20/2012
AUIRF5210S
1000
100
10
1000
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
TOP
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
10
1
BOTTOM
BOTTOM
-4.5V
-4.5V
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
100
10
I
= -38A
D
V
= -10V
GS
T
= 25°C
T
J
1.5
1.0
0.5
= 150°C
J
1
V
= -50V
DS
60μs PULSE WIDTH
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
2
4
6
8
10 12 14
T
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs.Temperature
4
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08/20/2012
AUIRF5210S
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = -23A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
V
V
V
= -80V
= -50V
= -20V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
C
C
6.0
iss
oss
4.0
C
rss
2.0
100
0.0
1
10
-V , Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
T
= 25°C
J
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
100
1000
-V , Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
08/20/2012
AUIRF5210S
RD
VDS
40
35
30
25
20
15
10
5
VGS
D.U.T.
RG
-
VDD
+
-10V
Pulse Width µs
Duty Factor
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
0
10%
25
50
T
75
100
125
150
, Case Temperature (°C)
C
90%
V
DS
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
CaseTemperature
1
D = 0.50
0.20
0.10
0.1
0.01
R1
R1
R2
R2
R3
R3
(sec)
Ri (°C/W)
J J
C
0.05
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
11
2 2
33
0.02
0.01
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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08/20/2012
AUIRF5210S
L
V
DS
500
450
400
350
300
250
200
150
100
50
D.U.T
R
G
V
I
DD
A
D
I
AS
TOP
-8.7A
-14A
BOTTOM -23A
DRIVER
-20V
0.01
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
I
AS
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy
vs.DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50K
.2F
Q
G
12V
.3F
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
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7
08/20/2012
AUIRF5210S
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
D.U.T*
Low Stray Inductance
+
Ground Plane
Low Leakage Inductance
Current Transformer
-
+
-
+
-
+
-
RG
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
[
] ***
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple 5%
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig15. ForP-ChannelHEXFETS
8
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08/20/2012
AUIRF5210S
D2PakPackageOutline
(Dimensions are shown in millimeters (inches))
D2PakPartMarkingInformation
PartNumber
AUIRF5210S
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
08/20/2012
AUIRF5210S
D2PakTape&ReelInformation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
10
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08/20/2012
AUIRF5210S
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
AUIRF5210S
D2Pak
50
800
800
AUIRF5210S
AUIRF5210STRL
AUIRF5210STRR
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11
08/20/2012
AUIRF5210S
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and
that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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08/20/2012
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