AUIRF5305TRL [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | AUIRF5305TRL |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总13页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96341
AUTOMOTIVE MOSFET
AUIRFR5305
AUIRFU5305
HEXFET® Power MOSFET
D
S
Features
V(BR)DSS
-55V
0.065
AdvancedPlanarTechnology
LowOn-Resistance
RDS(on) max.
ID
Ω
Dynamic dV/dT Rating
G
175°COperatingTemperature
Fast Switching
Fully Avalanche Rated
-31A
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
D
D
S
Description
S
D
D
G
G
SpecificallydesignedforAutomotiveapplications,thisCellular
Planar design of HEXFET® Power MOSFETs utilizes the
latestprocessingtechniquestoachievelowon-resistanceper
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
D-Pak
AUIRFR5305
I-Pak
AUIRFU5305
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
isnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)
is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Max.
-31
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
-22
A
-110
110
PD @TC = 25°C
Power Dissipation
W
W/°C
V
0.71
Linear Derating Factor
VGS
EAS
IAR
± 20
Gate-to-Source Voltage
280
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
mJ
A
-16
EAR
dv/dt
TJ
11
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
-5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
Units
RθJC
RθJA
RθJA
50
°C/W
Junction-to-Ambient (PCB mount) ∗∗
Junction-to-Ambient ***
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
AUIRFR/U5305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
-55
Typ.
–––
Max.
–––
Units
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
GS = -10V, ID = -16A
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V/°C
Ω
∆
V
∆
(BR)DSS/ TJ
–––
–––
-2.0
8.0
-0.034
–––
–––
V
RDS(on)
VGS(th)
gfs
0.065
-4.0
–––
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
–––
V
Forward Transconductance
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
-25
µA
nA
V
DS = -44V, VGS = 0V, TJ = 150°C
VGS = -20V
GS = 20V
–––
-250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
V
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Total Gate Charge
Min.
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
14
Max.
63
Units
ID = -16A
Qg
Qgs
Qgd
td(on)
tr
V
V
DS = -44V
GS = -10V See Fig.6 and 13
nC
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
13
29
VDD = -28V
ID = -16A
–––
–––
–––
–––
66
ns
Ω
RG = 6.8
td(off)
tf
Turn-Off Delay Time
Fall Time
39
Ω
RD = 1.6 See Fig.10
63
D
S
LD
Internal Drain Inductance
Between lead,
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
nH
pF
G
LS
Internal Source Inductance
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
1200
520
–––
–––
–––
V
DS = -25V
Output Capacitance
ƒ = 1.0MHz,see Fig.5
Reverse Transfer Capacitance
250
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
D
S
MOSFET symbol
Continuous Source Current
I
I
S
–––
–––
-31
showing the
(Body Diode)
A
G
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
SM
–––
–––
-110
T = 25°C, I = -16A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
71
-1.3
110
250
V
V
t
J
S
GS
SD
T = 25°C, I = -16A
ns
nC
J
F
rr
di/dt = 100A/µs
170
Q
rr
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ꢀ This is applied for I-PAK, LS of D-PAK is measured between
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
lead and center of die contact.
Uses IRF5305 data and test conditions.
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
2
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AUIRFR/U5305
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
N/A
D PAK
I-PAK
Moisture Sensitivity Level
Machine Model
Class M2 (200V)
( per AEC-Q101-002)
Class H1B (1000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRFR/U5305
1000
100
10
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
TOP
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
BOTTOM - 4.5V
100
10
1
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 175°C
C
T
c
= 25°C
1
0.1
A
A
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -27A
D
TJ = 25°C
TJ = 175°C
V DS= -25V
20µs PULSE WIDTH
V
= -10V
GS
A
10A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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AUIRFR/U5305
20
16
12
8
2500
2000
1500
1000
500
I
= -16A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= -44V
= -28V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
A
A
0
10
20
30
40
50
60
1
10
100
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
C
J
= 175°C
V
GS
= 0V
Single Pulse
A
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRFR/U5305
35
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
175
°
t
t
r
t
t
f
T , Case Temperature ( C)
d(on)
d(off)
C
V
GS
10%
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U5305
L
V
DS
700
600
500
400
300
200
100
0
I
D
-
+
V
TOP
-6.6A
-11A
BOTTOM -16A
D.U.T
AS
R
G
DD
A
I
DRIVER
-20V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test
Circuit
V
= -25V
50
DD
A
175
25
75
100
125
150
I
AS
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
-
-10V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR/U5305
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
**UseP-ChannelDriverforP-ChannelMeasurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
8
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AUIRFR/U5305
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUFR5305
DateCode
Y= Year
WW= Work Week
IRLogo
YWWA
A= Automotive, Lead Free
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFR/U5305
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUFU5305
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U5305
D-Pak (TO-252AA) Tape & Reel Information
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRFR/U5305
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFR5305
DPak
Tube
75
AUIRFR5305
AUIRFR5305TR
AUIRF5305TRL
AUIRF5305TRR
AUIRFU5305
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
2000
3000
3000
75
AUIRFU5305
IPak
12
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AUIRFR/U5305
IMPORTANT NOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reservetheright
tomakecorrections, modifications, enhancements, improvements, andotherchangestoitsproductsandservicesatanytimeand
to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and
/ or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’sstandard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
anunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthirdparties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptivebusinesspractice.
IR is not responsible or liable for any such statements.
IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,
orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailureoftheIRproductcouldcreate
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly
or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
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IRproductsareneitherdesignednorintendedforuseinmilitary/aerospaceapplicationsorenvironmentsunlesstheIRproductsare
specificallydesignatedbyIRasmilitary-gradeor“enhancedplastic.” OnlyproductsdesignatedbyIRasmilitary-grademeetmilitary
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with such use.
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designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible forany
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel:(310)252-7105
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13
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