AUIRF1018ESTRL [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | AUIRF1018ESTRL |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总11页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97711
AUTOMOTIVE GRADE
AUIRF1018ES
Features
HEXFET® Power MOSFET
●
●
●
●
●
●
●
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
D
S
VDSS
RDS(on) typ.
max.
60V
7.1m
8.4m
79A
G
ID
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
D
S
D
G
D2Pak
Automotiveapplicationsandawidevarietyofotherapplications.
IRF1018ESPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
79
Units
ID @ TC = 100°C
IDM
56
A
315
PD @TC = 25°C
W
110
Maximum Power Dissipation
Linear Derating Factor
0.76
W/°C
V
VGS
EAS
IAR
± 20
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
88
mJ
A
Avalanche Current
47
Repetitive Avalanche Energy
EAR
mJ
11
21
Peak Diode Recovery
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
1.32
40
Units
RθJC
Junction-to-Case
°C/W
Junction-to-Ambient (PCB Mount) , D2Pak
RθJA
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/19/11
AUIRF1018ES
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
60 ––– –––
––– 0.073 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
V
/ T
(BR)DSS Δ
Δ
J
RDS(on)
VGS(th)
gfs
–––
2.0
7.1
8.4
4.0
VGS = 10V, ID = 47A
VDS = VGS, ID = 100μA
VDS = 50V, ID = 47A
m
V
Ω
–––
Forward Transconductance
110 ––– –––
–––
––– –––
S
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
0.73 –––
20
Ω
μA
V
V
DS = 60V, VGS = 0V
––– ––– 250
––– ––– 100
––– ––– -100
DS = 48V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
46
10
12
34
13
35
55
46
69
nC ID = 47A
DS = 30V
VGS = 10V
ID = 47A, VDS =0V, VGS = 10V
ns VDD = 39V
ID = 47A
R = 10
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
V
Qgd
Qsync
td(on)
tr
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
G
VGS = 10V
VGS = 0V
Ciss
Input Capacitance
––– 2290 –––
––– 270 –––
––– 130 –––
––– 390 –––
––– 630 –––
Coss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 50V
Crss
pF ƒ = 1.0MHz
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 60V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
––– –––
A
79
(Body Diode)
showing the
G
ISM
Pulsed Source Current
(Body Diode)
––– ––– 315
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
39
V
TJ = 25°C, IS = 47A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 51V,
IF = 47A
di/dt = 100A/μs
–––
–––
–––
–––
–––
26
31
24
35
1.8
ns
47
Qrr
Reverse Recovery Charge
36
nC
A
53
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
use above this value.
ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is only applied to TO-220.
2
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AUIRF1018ES
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
BOTTOM
4.5V
4.5V
≤60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
≤
Tj = 175°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 47A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
V
J
1
= 25V
DS
≤60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
4000
3000
2000
1000
0
V
C
= 0V,
f = 1 MHZ
GS
16
= C + C , C SHORTED
I = 47A
D
iss
gs
gd ds
C
= C
rss
gd
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C + C
oss
ds
gd
12
8
C
iss
4
C
oss
C
rss
0
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
AUIRF1018ES
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
T
= 175°C
J
1msec
100μsec
10
1
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
DC
10
GS
0.1
0.1
0.1
1
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
80
80
Id = 5mA
60
40
20
0
75
70
65
60
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, CaseTemperature (°C)
C
T
, Temperature ( °C )
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
0.8
400
I
D
350
300
250
200
150
100
50
TOP
5.3A
11A
47A
0.6
0.4
0.2
0.0
BOTTOM
0
0
10
V
20
30
40
50
60
25
50
75
100
125
150
175
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
Fig 11. Typical COSS Stored Energy
4
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AUIRF1018ES
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
τι
(sec)
Ri (°C/W)
0.1
τJ
0.026741 0.000007
0.28078 0.000091
0.606685 0.000843
0.406128 0.005884
τC
τJ
τ1
τ
τ
τ
3 τ3
τ4
2 τ2
0.02
0.01
τ1
τ4
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Δ
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 10% Duty Cycle
= 47A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
AUIRF1018ES
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
14
12
10
8
I
I
I
I
= 1.0A
D
D
D
D
I
= 32A
= 51V
F
= 1.0mA
= 250μA
= 100μA
V
R
T = 25°C
J
T = 125°C
J
6
4
2
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
0
200
400
600
800
1000
T
di /dt (A/μs)
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
14
12
10
8
320
280
240
200
160
120
80
I
= 47A
= 51V
I
= 32A
V = 51V
R
F
F
V
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
40
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
320
I
= 47A
= 51V
F
280
240
200
160
120
80
V
R
T = 25°C
J
T = 125°C
J
40
0
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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AUIRF1018ES
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
V***
=10V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2V0GVS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
10V
PulseWidth ≤ 1µs
Duty Factor ≤ 0.1 %
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
AUIRF1018ES
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUF1018ES
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF1018ES
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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9
AUIRF1018ES
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF1018ES
D2Pak
Tube
Tape and Reel Left
Tape and Reel Right
50
800
800
AUIRF1018ES
AUIRF1018ESTRL
AUIRF1018ESTRR
10
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AUIRF1018ES
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reservetherighttomakecorrections,
modifications,enhancements,improvements,andotherchangestoitsproductsandservicesatanytimeandtodiscontinueanyproductorserviceswithout
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
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Fortechnicalsupport,pleasecontactIRsTechnicalAssistanceCenter
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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11
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