AUIRF1010ZS [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF1010ZS |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总15页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97458
AUIRF1010Z
AUIRF1010ZS
AUTOMOTIVE GRADE
AUIRF1010ZL
Features
HEXFET® Power MOSFET
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
D
V(BR)DSS
55V
7.5m
RDS(on) max.
Ω
G
Lead-Free,RoHSCompliant
Automotive Qualified *
ID (Silicon Limited)
ID (Package Limited)
94A
75A
S
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
D
D
D
S
D
S
S
D
D
G
G
G
D2Pak
TO-262
TO-220AB
AUIRF1010ZS
AUIRF1010ZL
AUIRF1010Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
94
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
66
A
@ T = 25°C
C
75
360
140
DM
P
@T = 25°C
C
Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.90
± 20
W/°C
V
V
GS
EAS
130
180
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.11
–––
62
Units
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
AUIRF1010Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55
–––
0.049
5.8
–––
–––
7.5
V
–––
–––
2.0
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 75A
VGS(th)
–––
–––
–––
–––
–––
–––
4.0
V
S
VDS = VGS, ID = 250µA
DS = 25V, ID = 75A
gfs
IDSS
Forward Transconductance
33
–––
20
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
63
Max.
95
Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
ID = 75A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
19
–––
–––
–––
–––
–––
–––
–––
nC
VDS = 44V
VGS = 10V
VDD = 28V
ID = 75A
24
18
150
36
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
RG = 6.8 Ω
VGS = 10V
Between lead,
92
LD
Internal Drain Inductance
4.5
nH
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
2840
420
–––
–––
–––
–––
–––
–––
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
250
pF
ƒ = 1.0MHz
Coss
1630
360
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss eff.
Effective Output Capacitance
560
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
360
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
22
1.3
33
23
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 75A, VDD = 25V
J F
di/dt = 100A/µs
rr
Q
t
15
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.05mH,
This value determined from sample failure population, starting
TJ = 25°C, L = 0.05mH, RG = 25Ω, IAS = 75A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
2
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AUIRF1010Z/S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
TO-220AB
TO-262
D2Pak
N/A
N/A
Moisture Sensitivity Level
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1010Z/S/L
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
100
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1000
T
= 25°C
T = 175°C
J
J
80
60
40
20
0
T
= 175°C
J
100
10
1
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 25V
20µs PULSE WIDTH
DS
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0
20
40
60
80
V
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
4
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AUIRF1010Z/S/L
20
16
12
8
5000
4000
3000
2000
1000
0
I = 75A
D
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
= 44V
DS
VDS= 28V
= C
rss
oss
gd
= C + C
ds
gd
Ciss
4
Coss
Crss
0
0
20
Q
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
10msec
V
= 0V
1.8
Single Pulse
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF1010Z/S/L
100
2.5
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 75A
D
V
= 10V
GS
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1010Z/S/L
15V
250
200
150
100
50
ID
TOP
31A
DRIVER
+
L
53A
V
DS
BOTTOM 75A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
Charge
D
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
0
1K
T
J
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1010Z/S/L
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
∆
assuming
Tj = 25°C due to
0.01
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
TOP
BOTTOM 10% Duty Cycle
= 75A
Single Pulse
I
D
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
60
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
40
20
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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AUIRF1010Z/S/L
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF1010Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF1010Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1010Z/S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRF1010ZS
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF1010Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUIRF1010ZL
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF1010Z/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
15.22 (.601)
23.90 (.941)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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13
AUIRF1010Z/S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF1010Z
AUIRF1010ZL
AUIRF1010ZS
TO-220
TO-262
D2Pak
Tube
Tube
Tube
AUIRF1010Z
AUIRF1010ZL
AUIRF1010ZS
50
50
Tape and Reel Left
800
AUIRF1010ZSTRL
Tape and Reel Right
800
AUIRF1010ZSTRR
14
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AUIRF1010Z/S/L
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix
follow automotive industry and / or customer specific requirements with regards to product discontinuance and process
change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
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products and applications using IR components. To minimize the risks with customer products and applications, customers
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Tel: (310) 252-7105
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