AUIRF1010EZ [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF1010EZ |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总15页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95962
AUIRF1010EZ
AUIRF1010EZS
AUTOMOTIVE GRADE
AUIRF1010EZL
Features
HEXFET® Power MOSFET
O
O
O
O
O
O
O
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
D
V(BR)DSS
60V
8.5m
RDS(on) max.
Ω
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
ID (Silicon Limited)
ID (Package Limited)
84A
75A
S
Description
D
D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
S
S
D
D
S
D
G
D2Pak
G
G
TO-262
AUIRF1010EZL
TO-220AB
AUIRF1010EZS
AUIRF1010EZ
cations.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Max.
84
Units
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
D
D
D
60
A
75
340
140
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
0.90
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
99
180
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
STG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
300
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
–––
Max.
1.11
–––
62
Units
Parameter
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/23/10
AUIRF1010EZ/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient ––– 0.058 –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
V
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
V
S
µA
6.8
–––
–––
–––
–––
–––
8.5
4.0
–––
20
250
200
Ω
m
VGS(th)
2.0
200
–––
–––
–––
–––
VDS = VGS, ID = 250µA
DS = 25V, ID = 51A
DS = 60V, VGS = 0V
DS = 60V, VGS = 0V, TJ = 125°C
gfs
IDSS
V
V
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
58
19
21
19
90
38
54
4.5
86
28
32
–––
–––
–––
–––
–––
nC ID = 51A
DS = 48V
VGS = 10V
DD = 30V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
ns
V
ID = 51A
Ω
RG = 7.95
VGS = 10V
D
S
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
pF VGS = 0V
Ciss
Input Capacitance
––– 2810 –––
Coss
Crss
Coss
Coss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
420
200
–––
–––
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
––– 1440 –––
–––
–––
320
510
–––
–––
Coss eff.
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
84
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
ISM
G
–––
–––
340
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 51A, V = 0V
Diode Forward Voltage
–––
–––
1.3
V
J
S
GS
trr
Qrr
T = 25°C, I = 51A, VDD = 30V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
41
54
62
81
ns
nC
J F
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25Ω, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.077mH, RG = 25Ω,
IAS = 51A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
,
Rθ is measured at TJ approximately 90°C.
ꢀ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
0 to 80% VDSS
.
2
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AUIRF1010EZ/S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
TO-220AB
N/A
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1010EZ/S/L
10000
1000
100
10
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
10
BOTTOM
BOTTOM
4.5V
1
1
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
90
T
= 25°C
80
70
60
50
40
30
20
10
0
J
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
0.1
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF1010EZ/S/L
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 51A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 48V
= 30V
= 12V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
6.0
C
iss
4.0
C
C
oss
2.0
rss
100
0.0
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
1
10
, Drain-to-Source Voltage (V)
100
V
V
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ance
Forward Voltage
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5
AUIRF1010EZ/S/L
2.5
2.0
1.5
1.0
0.5
100
I
= 84A
D
90
Limited By Package
V
= 10V
GS
80
70
60
50
40
30
20
10
0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
, Junction Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
R1
R2
R2
R3
R3
0.10
0.05
Ri (°C/W) τi (sec)
R1
0.1
τ
J τJ
τ
Cτ
0.415
0.410
0.285
0.000246
0.000898
0.009546
τ
τ
1τ1
τ
2 τ2
3τ3
0.02
0.01
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1010EZ/S/L
15V
400
350
300
250
200
150
100
50
I
D
TOP
5.7A
9.1A
DRIVER
+
L
V
DS
BOTTOM 51A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1010EZ/S/L
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
100
75
50
25
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
TOP
BOTTOM 1% Duty Cycle
= 51A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRF1010EZ/S/L
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF1010EZ/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUF1010EZ
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1010EZ/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUF1010EZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF1010EZ/S/L
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUF1010EZL
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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AUIRF1010EZ/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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13
AUIRF1010EZ/S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF1010EZ
AUIRF1010EZL
AUIRF1010EZS
TO-220
TO-262
D2Pak
Tube
AUIRF1010EZ
AUIRF1010EZL
AUIRF1010EZS
Tube
Tube
50
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF1010EZSTRL
AUIRF1010EZSTRR
14
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AUIRF1010EZ/S/L
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of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
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