AIKP20N60CT [INFINEON]
IGBT TRENCHSTOP™;
| 型号： | AIKP20N60CT |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 双极性晶体管 |
| 文件： | 总16页 (文件大小：2135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIKP20N60CT
TRENCHSTOPTMꢀSeries
LowꢀLossꢀDuoPack:ꢀIGBTꢀinꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀEmitterꢀControlledꢀdiode
ꢀ
C
Features:
•ꢀꢀAutomotiveꢀAECꢀQ101ꢀqualified
•ꢀꢀDesignedꢀforꢀDC/ACꢀconvertersꢀforꢀAutomotiveꢀApplication
•ꢀꢀVeryꢀlowꢀꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀꢀMaximumꢀJunctionꢀTemperatureꢀ150°C
•ꢀꢀDynamicallyꢀstressꢀtested
G
E
•ꢀꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs
•ꢀꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀVCE(sat)
•ꢀꢀLowꢀEMI
C
•ꢀꢀLowꢀGateꢀCharge
•ꢀꢀGreenꢀPackage
•ꢀꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V
ꢀꢀꢀapplicationsꢀoffers:
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀꢀꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀhighꢀswitchingꢀspeed
Applications:
G
•ꢀꢀMainꢀinverter
•ꢀꢀClimateꢀcompressor
•ꢀꢀPTCꢀheater
C
•ꢀꢀMotorꢀdrives
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 150°C
Marking
AK20DCT
Package
PG-TO220-3
AIKP20N60CT
600V
20A
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
40.0
20.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ150°C1)
ICpuls
60.0
60.0
A
A
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
40.0
20.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
60.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
156.0
W
°C
°C
-40...+150
-40...+150
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.90 K/W
1.50 K/W
62 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) tp≤1µs
Datasheet
3
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ20.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.50 2.05
1.85
Tvjꢀ=ꢀ150°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
Diode forward voltage
VF
-
-
1.65 2.05
V
V
1.65
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.29mA,ꢀVCEꢀ=ꢀVGE
4.1
4.9
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
550
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ20.0A
-
-
-
100
-
nA
S
11.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1100
71
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
32
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
-
-
120.0
-
-
nC
A
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ150°C
IC(SC)
183
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
14
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ131nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
199
42
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.31
0.46
0.77
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
41
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
0.31
13.3
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ880A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
711
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
17
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ131nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
217
70
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.47
0.60
1.07
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
201
1.28
16.6
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ800A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
481
-
A/µs
Datasheet
5
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
140
120
100
80
30
25
20
15
10
5
60
40
20
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tj≤150°C)
(VGE≥15V,ꢀTj≤150°C)
60
60
VGE=20V
VGE=20V
17V
17V
50
50
15V
15V
13V
13V
11V
11V
40
40
9V
9V
7V
7V
30
30
20
10
0
20
10
0
0
1
2
3
4
0
1
2
3
4
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=150°C)
Datasheet
6
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
40
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj=25°C
Tj=150°C
IC=10A
IC=20A
IC=40A
35
30
25
20
15
10
5
0
0
2
4
6
8
10
0
50
100
150
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=10V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
1
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=20A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
1000
7
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
100
10
25
50
75
100
125
150
-50
0
50
100
150
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀRG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0.29mA)
2.4
2.4
2.0
2.0
Eoff
Eoff
Eon*
Ets*
Eon*
Ets*
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀRG=12Ω,Dynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀTj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=20A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
Eoff
Eon*
Ets*
Eoff
Eon*
Ets*
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
300
350
400
450
500
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=20A,ꢀRG=12Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTj=150°C,ꢀVGE=15/0V,
IC=20A,ꢀRG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
20
120V
480V
Ciss
Coss
Crss
1000
100
10
15
10
5
0
0
25
50
75
100
125
150
0
10
20
30
40
50
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=20A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
350
300
250
200
150
100
50
12
10
8
6
4
2
0
0
12
14
16
18
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀTj≤150°C)
(VCE=400V,ꢀstartꢀatꢀTj=25°C,ꢀTjmax≤150°C)
1
1
0.1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
i:
ri[K/W]: 0.33997 0.44456 0.58146
τi[s]: 1.3E-4 1.5E-3
1
2
3
4
ri[K/W]: 0.07041 0.30709 0.3199
τi[s]:
0.18715
0.13483
9.6E-5
6.8E-4
0.0108462 0.0692548
0.0182142 0.0920745
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. IGBTꢀtransientꢀthermalꢀresistanceꢀasꢀa
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
cyclesꢀD
(D=tp/T)
cyclesꢀD
(D=tp/T)
Datasheet
10
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
300
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
250
200
150
100
50
0
600
900
1200
1500
600
900
1200
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
25
20
15
10
5
0
-150
-300
-450
-600
-750
-900
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
0
600
900
1200
1500
600
900
1200
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
11
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
60
2.5
2.0
1.5
1.0
0.5
0.0
Tj=25°C
Tj=150°C
IC=10A
IC=20A
IC=40A
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
Package Drawing PG-TO220-3
Datasheet
13
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2017-02-09
AIKP20N60CT
TRENCHSTOPTMꢀSeries
RevisionꢀHistory
AIKP20N60CT
Revision:ꢀ2017-02-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2017-02-09 Data sheet created
Datasheet
15
Vꢀ2.1
2017-02-09
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
µHVIC™,ꢀµIPM™,ꢀµPFC™,ꢀAU-ConvertIR™,ꢀAURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀCoolDP™,
CoolGaN™,ꢀCOOLiR™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀDAVE™,ꢀDI-POL™,ꢀDirectFET™,ꢀDrBlade™,ꢀEasyPIM™,
EconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀGaNpowIR™,
HEXFET™,ꢀHITFET™,ꢀHybridPACK™,ꢀiMOTION™,ꢀIRAM™,ꢀISOFACE™,ꢀIsoPACK™,ꢀLEDrivIR™,ꢀLITIX™,ꢀMIPAQ™,
ModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPowIRaudio™,ꢀPowIRStage™,ꢀPrimePACK™,
PrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀSPOC™,
StrongIRFET™,ꢀSupIRBuck™,ꢀTEMPFET™,ꢀTRENCHSTOP™,ꢀTriCore™,ꢀUHVIC™,ꢀXHP™,ꢀXMC™
ꢀ
TrademarksꢀupdatedꢀNovemberꢀ2015
ꢀ
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2017.
AllꢀRightsꢀReserved.
ImportantꢀNotice
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
相关型号：
©2020 ICPDF网 联系我们和版权申明