AIKQ200N75CP2 [INFINEON]
EDT2;
| 型号： | AIKQ200N75CP2 |
| 厂家： | 
Infineon |
| 描述： | EDT2 |
| 文件： | 总16页 (文件大小：1333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIKQ200N75CP2
EDT2 IGBT
EDT2 IGBT and emitter controlled diode in TO247PLUS package
Features
• VCE = 750 V
• IC = 200 A
• Best-in-class highest power density, IC = 200 A
• 750 V collector-emitter blocking voltage capability
• Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems
• Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C
• Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V
• Self limiting current under short circuit condition
• Positive thermal coefficient and very tight parameter distribution for easy paralleling
• A Reduced number of parallel devices is required due to Inom = 200 A
• Excellent current sharing in parallel operation
• Smooth switching characteristics, low EMI signature
• Low gate charge QG
• Simple gate drive design
• Co-packed with fast sof recovery emitter controlled 3 diode
• TO247PLUS package with high creepage distance
• High reliability
Potential applications
• xEV Inverter
• DC-link discharge switch
• Automotive aux-drives
Product validation
• Qualified for automotive applications
• Qualified according to AEC-Q101
Description
C
G
E
Type
Package
Marking
AIKQ200N75CP2
PG-TO247PLUS-3
AKQ20FCP
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
Datasheet
2
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Internal emitter
LE
13.0
nH
inductance measured 5
mm (0.197 in) from case
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Thermal resistance,
junction-ambient
Rth(j-a)
40
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
VCE
Parameter
Values
750
Unit
Collector-emitter voltage
V
A
DC collector current,
limited by Tvjmax
IC
Tc = 25 °C
200
Tc = 100 °C
200
Pulsed collector current, tp
limited by Tvjmax
ICpulse
600
A
A
Turn-off safe operating
area
VCE ≤ 750 V, tp = 1 µs, Tvj ≤ 175 °C
600
Gate-emitter voltage
VGE
VGE
20
30
V
V
Transient gate-emitter
voltage
tp<0.1 µs, D<0.01
Short-circuit withstand
time
tSC
VCC ≤ 470 V, VGE=15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 25 °C
5
µs
W
Power dissipation
Ptot
Tc = 25 °C
1071
535
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.3
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 200 A, VGE=15 V
Tvj = 25 °C
1.5
V
V
Tvj = 175 °C
1.6
Gate-emitter threshold
voltage
VGEth
IC = 2.6 mA, VCE = VGE, Tvj=25 °C
5
5.8
6.5
(table continues...)
Datasheet
3
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
µA
Min.
Max.
Zero gate-voltage collector
current
ICES
VCE = 750 V, VGE=0 V
Tvj=25 °C
200
Tvj=175 °C
6000
Gate-emitter leakage
current
IGES
VCE=0 V, VGE=20 V
100
nA
Transconductance
gfs
ISC
IC = 200 A, VCE=20 V
140
S
A
Short-circuit collector
current
VCC ≤ 470 V, VGE=15 V, tSC ≤ 5 µs, Allowed
number of short circuits < 1000 , Time
between short circuits ≥ 1.0 s, Tvj=25 °C
1250
Input capacitance
Output capacitance
Cies
Coes
Cres
VCE=25 V, VGE=0 V, f=100 kHz
VCE=25 V, VGE=0 V, f=100 kHz
VCE=25 V, VGE=0 V, f=100 kHz
21250
535
pF
pF
pF
Reverse transfer
capacitance
93
Gate charge
QG
IC = 200 A, VGE=15 V, VCC = 600 V, VCE=600 V
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
1256
89
nC
ns
Turn-on delay time
tdon
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
85
120
117
266
284
46
Rise time (inductive load)
Turn-off delay time
Fall time (inductive load)
Turn-on energy1)
tr
tdoff
tf
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
ns
ns
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
ns
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
60
Eon
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
15.3
16.3
7
mJ
mJ
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
Turn-off energy
Eoff
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
8.1
(table continues...)
Datasheet
4
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
3 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Total switching energy
Ets
VCE = 470 V, VGE = -8/15 V, Tvj = 25 °C,
22.3
mJ
RGon = 5 Ω, RGoff = 5 Ω,
L =50 nH, C =30 pF
IC = 200 A
σ
σ
Tvj = 175 °C,
IC = 200 A
24.4
0.1
IGBT thermal resistance,
junction to case2)
Rthjc
Tvj
0.14
175
K/W
°C
Operating junction
temperature
-40
1)
2)
Includes reverse recovery losses
Not subject to production test - specified by simulation
3
Diode
Table 4
Maximum rated values
Symbol Note or test condition
IF
Parameter
Values
200
Unit
Diode forward current,
limited by Tvjmax
Tc = 25 °C
A
Tc = 100 °C
200
Diode pulsed current,
limited by Tvjmax
IFpulse
Ptot
600
A
Power dissipation
Tc = 25 °C
576
288
W
Tc = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.8
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 200 A
Tvj=25 °C
1.95
Tvj=175 °C
1.9
Diode reverse recovery
charge
Qrr
VR<470 V, RGon = 4.8 Ω
Tvj = 25 °C,
4.7
µC
IF = 200 A,
-diF/dt = 1060 A/µs
Tvj = 175 °C,
7.5
IF = 200 A,
-diF/dt = 1110 A/µs
(table continues...)
Datasheet
5
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
3 Diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
41
Unit
Min.
Max.
Diode peak reverse
recovery current
Irrm
VR<470 V, RGon = 4.8 Ω
Tvj = 25 °C,
A
IF = 200 A,
-diF/dt = 1060 A/µs
Tvj = 175 °C,
56
IF = 200 A,
-diF/dt = 1110 A/µs
Reverse recovery energy
Erec
VR<470 V, VGE = -8/15 V, Tvj=25 °C,
1.3
2.2
0.2
mJ
RGon = 4.8 Ω, L = 50 nH, -diF/dt = 1060 A/µs
σ
C = 30 pF
σ
Tvj=175 °C,
-diF/dt = 1110 A/µs
Diode thermal resistance,
junction to case1)
Rthjc
Tvj
0.26
175
K/W
°C
Operating junction
temperature
-40
1)
Not subject to test
Datasheet
6
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of case temperature, Collector current as a function of case temperature,
IGBT
IGBT
Ptot = f(Tc)
IC = f(Tc)
Tvj ≤ 175 °C
Tvj ≤ 175 °C, VGE = 15 V
1200
1000
800
600
400
200
0
220
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Typical output characteristic, IGBT
IC = f(VCE
Typical transfer characteristic, IGBT
IC = f(VGE
)
)
Tvj = =175 °C
VCE = 20 V
600
600
500
400
300
200
100
500
400
300
200
100
0
0
0
1
2
3
4
5
6
0
5
10
15
Datasheet
7
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
Typical switching times as a function of collector
current, IGBT
VCEsat = f(Tvj)
t = f(IC)
VGE = 15 V
RGoff = 5 Ω, VCE = 25 V, Tvj = 175 °C, VGE = -8/15 V, RGon = 5 Ω
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
10
25
50
75
100
125
150
175
0
100
200
300
400
Typical switching times as a function of gate resistor, Typical switching times as a function of junction
IGBT
temperature, IGBT
t = f(RG)
t = f(Tvj)
IC = 200 A, VCE = 470 V, Tvj = 175 °C, VGE = -8/15 V
IC = 200 A, RGoff = 5.0 Ω, VCE = 470 V, VGE = -8/15 V, RGon = 5
Ω
10000
1000
100
1000
100
10
10
25
50
75
100
125
150
175
0
10
20
30
40
Datasheet
8
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical Gate-emitter threshold voltage as a function
of junction temperature, IGBT
Typical switching energy losses as a function of gate
resistor, IGBT
VGEth = f(Tvj)
E = f(RG)
IC = 2.60 mA
IC = 200 A, VCE = 25 V, Tvj = 175 °C, VGE = -8/15 V
8
7
6
5
4
3
2
1
0
70
60
50
40
30
20
10
0
25
50
75
100
125
150
0
10
20
30
40
Typical switching energy losses as a function of
collector current, IGBT
Typical switching energy losses as a function of
junction temperature, IGBT
E = f(IC)
E = f(Tvj)
RGoff = 5 Ω, VCE = 25 V, Tvj = 175 °C, VGE = -8/15 V, RGon = 5 Ω IC = 200 A, RGoff = 5.0 Ω, VCE = 470 V, VGE = -8/15 V, RGon = 5
Ω
80
70
60
50
40
30
20
10
0
28
24
20
16
12
8
4
0
25
50
75
100
125
150
175
0
100
200
300
400
Datasheet
9
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical switching energy losses as a function of
collector emitter voltage, IGBT
Typical capacitance as a function of collector-emitter
voltage, IGBT
E = f(VCE
)
C = f(VCE)
IC = 200 A, RGoff = 5 Ω, Tvj ≤ 175 °C, VGE = -8/15 V, RGon = 5 Ω f = 100 kHz, VGE = 0 V
28
24
20
16
12
8
100000
10000
1000
100
4
0
10
200
300
400
500
0
5
10
15
20
25
30
Typical gate charge, IGBT
Typical Short circuit withstand time as a function of
gate-emitter voltage, IGBT
VGE = f(QGE
)
tSC = f(VGE
)
IC = 200 A
Tvj ≤ 175 °C, VCC ≤ 470 V
16
12
8
9
8
7
6
5
4
3
4
0
-4
-8
0
200
400
600
800
1000 1200 1400
8
9
10
11
12
13
14
15
16
Datasheet
10
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical short circuit collector current as a function of IGBT transient thermal impedance as a function of
gate-emitter voltage, IGBT
IC(SC) = f(VGE
pulse width, IGBT
Zth = f(tp)
)
Tvj ≤ 175 °C, VCC ≤ 470 V
D = tp/T
2000
1
0.1
1600
1200
800
400
0
0.01
0.001
0.0001
1E-5
1E-6
1E-5
0.0001
0.001
0.01
0.1
10
12
14
16
18
20
Typical output characteristic, IGBT
IC = f(VCE
Tvj = 25 °C
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
)
D = tp/T
600
1
0.1
500
400
300
200
100
0
0.01
0.001
0.0001
1E-5
1E-6
1E-5
0.0001
0.001
0.01
0.1
0
1
2
3
4
5
6
Datasheet
11
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical reverse recovery time as a function of diode
current slope, Diode
Typical reverse recovery charge as a function of diode
current slope, Diode
trr = f(diF/dt)
Qrr = f(diF/dt)
VR < 470 V, IF = 200 A
VR < 470 V, IF = 200 A
450
400
350
300
250
200
8
7
6
5
4
3
2
1
0
500
600
700
800
900
1000
1100
500
600
700
800
900
1000
1100
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode
Irr = f(diF/dt)
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR < 470 V, IF = 200 A
VR < 470 V, IF = 200 A
60
50
40
30
20
10
0
0
-100
-200
-300
-400
-500
500
600
700
800
900
1000
1100
500
600
700
800
900
1000
1100
Datasheet
12
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature, Diode
Typical diode forward current as a function of forward
voltage, Diode
VF = f(Tvj)
IF = f(VF)
2.5
800
700
600
500
400
300
200
100
0
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
0
1
2
3
4
Datasheet
13
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
5 Package outlines
5
Package outlines
Package Drawing PG-TO247PLUS-3
MILLIMETERS
DIM
INCHES
MIN
4.90
2.31
1.90
1.16
1.96
1.96
MAX
5.10
2.51
2.10
1.26
2.25
2.06
MIN
MAX
0.201
0.099
0.083
0.050
0.089
0.081
A
0.193
0.091
0.075
0.046
0.077
0.077
DOCUMENT NO.
Z8B00174295
A1
A2
b
0
SCALE
b1
b2
5
0
5
c
D
0.59
20.90
16.25
1.05
0.66
21.10
16.85
1.35
0.023
0.823
0.640
0.041
0.023
0.618
0.516
0.053
0.026
0.831
0.663
0.053
0.031
0.626
0.531
0.061
7.5mm
D1
D2
D3
E
EUROPEAN PROJECTION
0.58
0.78
15.70
13.10
1.35
15.90
13.50
1.55
E1
E3
e
5.44 (BSC)
3
0.214 (BSC)
3
ISSUE DATE
13-08-2014
N
L
19.80
-
20.10
4.30
2.10
0.780
-
0.791
0.169
0.083
REVISION
L1
R
01
1.90
0.075
Figure 1
Datasheet
14
Revision 1.10
2022-03-16
AIKQ200N75CP2
EDT2 IGBT
Revision history
Revision history
Document revision
Date of release Description of changes
V0.1
V0.2
V0.1
n/a
2020-10-09
2020-11-02
Target
Updated marking on page1
Target
2020-11-30
Datasheet migrated to a new system with a new layout and new revision
number schema: target or preliminary datasheet = 0.xy; final datasheet =
1.xy
1.00
1.10
2022-02-16
2022-03-16
Final datasheet
Updated Isc and Rthjc
Datasheet
15
Revision 1.10
2022-03-16
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-03-16
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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be expected to result in personal injury.
a written document signed by
©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAL443-004
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
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