AIKW50N65DF5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | AIKW50N65DF5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总16页 (文件大小：1985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
HighꢀspeedꢀfastꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwith
RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
E
FeaturesꢀandꢀBenefits:
ꢀꢀꢀHighꢀspeedꢀF5ꢀtechnologyꢀoffering:
•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
ꢀꢀꢀtopologies
•ꢀꢀ650Vꢀbreakdownꢀvoltage
•ꢀꢀLowꢀgateꢀchargeꢀQG
•ꢀꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀꢀDynamicallyꢀstressꢀtested
G
•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101
•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)
•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
ꢀꢀꢀhttp://www.infineon.com/igbt/
Applications:
•ꢀꢀOff-boardꢀcharger
•ꢀꢀOn-boardꢀcharger
•ꢀꢀDC/DCꢀconverter
•ꢀꢀPower-Factorꢀcorrection
1
2
Packageꢀpinꢀdefinition:
•ꢀꢀPinꢀ1ꢀ-ꢀgate
•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.66V 175°C
Marking
Package
PG-TO247-3
AIKW50N65DF5
650V
50A
AK50EDF5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
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AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
80.0
53.5
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
150.0
150.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
40.0
27.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
150.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
270.0
136.0
Ptot
W
Operating junction temperature
Tvj
-40...+175
-55...+150
°C
°C
Storage temperature
Tstg
Soldering temperature,2)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-C)
Rth(j-C)
Rth(j-a)
-
-
-
-
-
-
0.55 K/W
1.50 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.66 2.10
1.90
2.03
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ25.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.54 1.80
Diode forward voltage
VF
V
1.52
1.49
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.30mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
1200
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
62.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2800
65
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
11
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
108.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
21
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
156
6
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.49
0.14
0.63
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
4
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
173
10
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.10
0.03
0.13
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
77
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1200A/µs
Qrr
0.68
15.5
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-258
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
36
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ6.0A,
Qrr
0.28
12.5
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-759
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
21
14
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
191
5
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.68
0.25
0.93
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
5
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ6.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
229
13
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.18
0.06
0.24
mJ
mJ
mJ
Datasheet
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AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
123
1.47
20.8
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-214
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
65
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ6.0A,
Qrr
0.71
19.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-462
-
A/µs
Datasheet
6
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
270
240
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
60
30
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
150
135
150
135
120
120
VGE = 20V
VGE = 20V
18V
18V
105
105
15V
15V
90
90
12V
12V
10V
8V
7V
6V
5V
10V
8V
7V
6V
5V
75
60
45
30
15
0
75
60
45
30
15
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Datasheet
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AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
150
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
ICꢀ=ꢀ6.25A
ICꢀ=ꢀ12.5A
ICꢀ=ꢀ25A
135
ICꢀ=ꢀ50A
120
105
90
75
60
45
30
15
0
4
5
6
7
8
9
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
30
60
90
120
150
5
15
25
35
45
55
65
75
85
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=25A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
(IC=0.3mA)
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamicꢀtest
circuit in Figure E)
11
10
9
2.4
Eoff
Eon
Ets
Eoff
Eon
Ets
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
0
0
30
60
90
120
150
5
15
25
35
45
55
65
75
85
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,
dynamic test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=25A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
9
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2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=25A,ꢀRG(on)=12Ω,ꢀRG(off)=12Ω,ꢀdynamic
test circuit in Figure E)
16
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
1E+4
Cres
14
12
10
8
1000
100
10
1
6
4
2
0
0
20
40
60
80
100
120
0
5
10
15
20
25
30
QG,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=50A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
10
Vꢀ2.1
2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1
1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
i:
ri[K/W]: 0.2723102 0.3217888 0.4470437 0.4588573
τi[s]: 1.3E-4 1.1E-3 0.0104944 0.1086427
1
2
3
4
ri[K/W]: 0.026138 0.118331 0.159109 0.181217 0.065204
τi[s]:
3.3E-5
2.5E-4
3.9E-3
0.044084 0.191225
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
180
1.6
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ25A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ25A
160
140
120
100
80
1.4
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ25A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ25A
1.2
1.0
0.8
0.6
0.4
0.2
60
40
500
700
900 1100 1300 1500 1700 1900
500
700
900 1100 1300 1500 1700 1900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
11
Vꢀ2.1
2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
24
0
-50
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ25A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ25A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ25A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ25A
22
20
18
16
14
12
10
8
-100
-150
-200
-250
-300
-350
-400
500
700
900 1100 1300 1500 1700 1900
500
700
900 1100 1300 1500 1700 1900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
75.0
2.2
2.0
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
62.5
50.0
37.5
25.0
12.5
0.0
IFꢀ=ꢀ6.25A
IFꢀ=ꢀ12.5A
IFꢀ=ꢀ25A
IFꢀ=ꢀ50A
1.8
1.6
1.4
1.2
1.0
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO247-3
Datasheet
13
Vꢀ2.1
2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2017-06-30
AIKW50N65DF5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
AIKW50N65DF5
Revision:ꢀ2017-06-30,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2017-06-30 Data sheet created
Datasheet
15
Vꢀ2.1
2017-06-30
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