75LQ150 [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 75LQ150 |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94190
SCHOTTKYRECTIFIER
HIGH EFFICIENCY SERIES
75LQ150
75 Amp, 150V
Major Ratings and Characteristics
Description/Features
The 75LQ150 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Characteristics
75LQ150 Units
IF(AV)
75
A
VRRM
150
400
0.72
V
A
V
IFSM @ tp = 8.3ms half-sine
V
F
@ 75Apk, TJ =125°C
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long term
Reliability
TJ, Tstg Operating and storage -55 to 150
°C
• Surface Mount
• Lightweight
CASE STYLE
CATHODEANODEANODE
IR Case Style SMD-1
www.irf.com
1
05/31/01
75LQ150
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
75LQ150
150
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Limits Units
Conditions
IF(AV) Max. AverageForwardCurrent
75
A
50% duty cycle @ TC = 108 °C, square waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ tp = 8.3 ms half-sine
ElectricalSpecifications
Parameters
Limits Units
Conditions
VFM
Max. ForwardVoltageDrop
1.22
1.44
0.98
1.27
0.72
0.85
0.1
V
@ 75A
TJ = -55°C
TJ = 25°C
TJ = 125°C
See Fig. 1
V
@ 150A
@ 75A
V
V
@ 150A
@ 75A
V
V
@ 150A
TJ = 25°C
TJ = 100°C
TJ = 125°C
IRM
Max. Reverse Leakage Current
mA
mA
mA
See Fig. 2
4.0
VR = rated VR
20
CT
Max. Junction Capacitance
Typical Series Inductance
1200
5.9
pF
nH
VR = 5VDC ( 1MHz, 25°C )
L S
Measured from center of cathode pad to center of
anode pad
Thermal-MechanicalSpecifications
Parameters
Limits Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
0.65
°C
Tstg
Max.StorageTemperatureRange
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DCoperation
See Fig. 4
wt
Weight(Typical)
Die Size (Typical)
Case Style
2.6
g
150X180
mils
SMD-1
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
2
www.irf.com
75LQ150
100
10
125°C
100°C
1
75°C
1000
100
10
0.1
25°C
0.01
0.001
0.0001
0
40
80
120
160
Reverse Voltage - V (V)
R
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Tj = 25°C
Tj = -55°C
10000
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1000
T
= 25°C
J
Forward Voltage Drop - V (V)
F
Fig. 1 - Max. Forward Voltage Drop Characteristics
100
0
40
80
120
160
Reverse Voltage -V (V)
R
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
75LQ150
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
75LQ150
thJC
160
R
= 0.65°C/W
140
120
100
80
DC
60
40
20
0
0
20
40
60
80
100
(A)
120
Average Forward Current - I
F(AV)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
4
www.irf.com
相关型号：
75LQ150PBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 75A, 150V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
INFINEON
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