112RIA80S90PBF [INFINEON]
Silicon Controlled Rectifier, 172A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD, METAL GLASS, TO-83, 3 PIN;
| 型号： | 112RIA80S90PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 172A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD, METAL GLASS, TO-83, 3 PIN 栅 栅极 |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25204 01/01
111RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
High current and high surge ratings
dv/dt = 1000V/µs option
Glass-metal seal up to 1200V
Threaded studs UNF 1/2"-20UNF-2A
Types up to 1200V VRRM/VDRM
di/dt = 300A/µs
110A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
111RIA
110
Units
A
@ TC
90
°C
IT(RMS)
ITSM
172
A
@50Hz
@ 60Hz
@50Hz
@ 60Hz
2080
2180
21.7
19.8
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 140
°C
1
www.irf.com
111RIA Series
Bulletin I25204 01/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
111RIA
peak and off-state voltage
repetitive peak voltage
@ T = TJ max.
V
400
800
V
500
900
J mA
40
80
20
120
1200
1300
On-state Conduction
Parameter
111RIA
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
110
90
A
°C
180° conduction, half sine wave
IT(RMS) Max. RMS on-state current
172
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
DC @ 83°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
non-repetitive surge current
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.82
1.02
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)),TJ = TJ max.
V
VT(TO) High level value of threshold
2
voltage
rt1
Low level value of on-state
slope resistance
2.16
1.70
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)),TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.57
150
400
V
I = 350A, TJ = TJ max., t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 6V resistive load
IL
Switching
Parameter
111RIA
300
Units Conditions
di/dt Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25Ω
t
110
www.irf.com
2
111RIA Series
Bulletin I25204 01/01
Blocking
Parameter
dv/dt Maximum critical rate of rise of
off-state voltage
111RIA
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
20
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
111RIA
12
Units Conditions
PGM
TJ = TJ max, t ≤ 5ms
p
W
A
3.0
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM
Maximum peak negative
gate voltage
TYP.
MAX.
IGT
DC gate current required
to trigger
180
80
40
-
120
-
TJ = - 40°C
TJ = 25°C
mA
V
Max. required gate trigger/ cur-
TJ = 140°C
TJ = - 40°C
TJ = 25°C
TJ = 140°C
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT
DC gate voltage required
to trigger
2.5
1.6
1
-
2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
6.0
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
Max. operatingtemperaturerange
Max. storage temperature range
111RIA
-40 to 140
-40 to 150
Units Conditions
°C
TJ
T
stg
RthJC Max. thermal resistance,
0.27
DC operation
K/W
junction to case
RthCS Max. thermal resistance,
0.1
Mounting surface, smooth, flat and greased
Non lubricated threads
case to heatsink
T
Mountingtorque, ±10%
15.5
(137)
14
Nm
(lbf-in)
Lubricated threads
SeeOutlineTable
(120)
130
wt
Approximate weight
Case style
g
TO-209AC(TO-94)
www.irf.com
3
111RIA Series
Bulletin I25204 01/01
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.043
0.052
0.066
0.096
0.167
0.031
0.053
0.071
0.101
0.169
K/W
60°
30°
Ordering Information Table
Device Code
11
1
RIA 120
1
2
3
4
5
1
2
-
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
Thyristor
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
Critical dv/dt: None = 500V/µsec
S90
=
1000V/µsec
Outline Table
GLASS-METAL SEAL
FLAG TERMINALS
23.5 DIA.
5.5 (0.22) DIA.
5.6 (0.22)
(0.93) MAX.
1.5 (0.06) DIA.
1/2"-20UNF-2A *
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
2.4 (0.09)
29.5 (1.16)
* FOR METRIC DEVICE: M12 x 1.75 E 6
www.irf.com
4
111RIA Series
Bulletin I25204 01/01
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
2.5 (0.10) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
23.5 (0.92) MAX. DIA.
SW 27
1/2"-20UNF-2A *
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
29.5 (1.16) MAX.
* FOR METRIC DEVICE : M12 x 1.75 E 6
140
130
120
110
100
90
140
111RIA Series
RthJC (DC) = 0.27 K/W
111RIA Series
RthJC (DC) = 0.27 K/W
130
120
110
100
90
Conduction Period
Conduction Angle
30˚
30˚
60˚
60˚
90˚
90˚
80
120˚
180˚
120˚
180˚
DC
80
70
0
20
AverageOn-StateCurrent(A)
Fig. 1 - Current Ratings Characteristics
40
60
80 100 120
0
30
60
90 120 150 180
AverageOn-StateCurrent(A)
Fig. 2 - Current Ratings Characteristics
www.irf.com
5
111RIA Series
Bulletin I25204 01/01
160
140
120
100
R
= 0.3 K/W - Delta R
180˚
120˚
90˚
60˚
30˚
thSA
0.6 K/W
0.8 K/W
1 K/W
RMS Limit
1.5 K/W
2 K/W
80
60
40
20
0
Conduction Angle
111RIA Series
4 K/W
5 K/W
T
= 140˚C
J
0
20
40
60
80 100 120
20 40 60 80 100 120 140
AverageOn-StateCurrent(A)
MaximumAllowableAmbientTemperature(°C)
Fig. 3 - On-State Power Loss Characteristics
220
200
180
160
140
120
100
80
R
= 0.3 K/W - Delta R
DC
180˚
120˚
90˚
60˚
30˚
thSA
0.6 K/W
0.8 K/W
1 K/W
RMS Limit
1.5 K/W
2 K/W
Conduction Period
111RIA Series
60
40
4 K/W
5 K/W
T
= 140˚C
J
20
0
0
20 40 60 80 100 120 140 160 1
0
80 20 40 60 80 100 120 140
AverageOn-StateCurrent(A)
MaximumAllowableAmbientTemperature(°C)
Fig. 4 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
2500
2000
1500
1000
500
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 140˚C
Initial Tj = 140˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
111RIA Series
111RIA Series
1
10
100
0.01
0.1
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
www.irf.com
6
111RIA Series
Bulletin I25204 01/01
10000
1000
100
10
Tj = 25˚C
Tj = 140˚C
111RIA Series
1
0
1
2
3
4
5
InstantaneousOn-StateVoltage(V)
Fig. 7-On-StateVoltageDropCharacteristics
1
0.1
Steady State Value
RthJC = 0.27 K/W
(DC Operation)
0.01
111RIA Series
0.1
0.001
0.0001
0.001
0.01
1
10
SquareWavePulseDuration(s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
10
1
Rectangular gate pulse
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
a) Recommended load line for
rated di/dt: 20V, 30ohms;
tr<=0.5 µs, tp=>6µs
b) Recommended load line for
<=30% rated di/dt: 15V, 40ohms
tr<=1 µs, tp=>6µs
(a)
(b)
(2)
(4)
(1)
(3)
VGD
Frequency Limited by PG(AV)
IGD
Device: 111RIA Series
0.1
0.001
0.01
0.1
1
10
100
1000
InstantaneousGateCurrent(A)
Fig. 9 - Gate Characteristics
www.irf.com
7
111RIA Series
Bulletin I25204 01/01
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/01
www.irf.com
8
相关型号：
112RKI10
Silicon Controlled Rectifier, 172A I(T)RMS, 110000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-209AC
INFINEON
112RKI100S90
Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC
VISHAY
112RKI100S90PBF
Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC
VISHAY
112RKI120S90PBF
Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AD
VISHAY
©2020 ICPDF网 联系我们和版权申明