112RKI100S90PBF [VISHAY]
Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC;
| 型号： | 112RKI100S90PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC 栅 栅极 |
| 文件： | 总7页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25152 rev. C 05/97
111RKI SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
110A
High current and high surge ratings
dv/dt = 1000V/µs option
Ceramic housing
Threaded studs UNF 1/2 - 20UNF2A
Types up to 1200V VRRM/VDRM
di/dt = 300A/µs
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
111RKI
110
Units
A
@ TC
90
°C
IT(RMS)
ITSM
172
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2080
2180
21.7
19.8
A
A
I2t
KA2s
KA2s
V
DRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 140
°C
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1
111RKI Series
Bulletin I25152 rev. C 05/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
111RKI
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ max.
mA
40
80
400
500
800
900
20
120
1200
1300
On-state Conduction
Parameter
111RKI
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
110
90
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
172
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
DC @ 83°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
non-repetitive surge current
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
0.82
1.02
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
rt1
Low level value of on-state
slope resistance
2.16
1.70
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.57
200
400
V
I = 350A, TJ = TJ max., t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 6V resistive load
IL
Switching
Parameter
111RKI
300
Units Conditions
di/dt Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
I
TM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
t
Typical turn-off time
110
dv/dt = 20V/µs, Gate 0V 25Ω
2
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111RKI Series
Bulletin I25152 rev. C 05/97
Blocking
Parameter
111RKI
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
20
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
111RKI
Units Conditions
PGM
12
3.0
3.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
TYP.
MAX.
IGT
DC gate current required
to trigger
TJ = - 40°C
180
80
-
120
-
mA TJ
= 25°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
40
TJ = 140°C
TJ = - 40°C
VGT
DC gate voltage required
to trigger
2.5
1.6
1
-
2
-
V
TJ
= 25°C
T
J = 140°C
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
6.0
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
111RKI
-40 to 140
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 150
stg
RthJC Max. thermal resistance,
junction to case
0.27
DC operation
K/W
RthCS Max. thermal resistance,
0.1
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
15.5
(137)
14
Non lubricated threads
Nm
(lbf-in)
Lubricated threads
See Outline Table
(120)
130
wt
Approximate weight
Case style
g
TO - 209AC (TO-94)
3
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111RKI Series
Bulletin I25152 rev. C 05/97
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.043
0.052
0.066
0.096
0.167
0.031
0.053
0.071
0.101
0.169
K/W
60°
30°
Ordering Information Table
Device Code
11
1
RKI 120
4
1
2
3
5
1
2
-
-
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
Thyristor
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
Critical dv/dt: None = 500V/µsec
S90
=
1000V/µsec
Outline Table
CERAMIC HOUSING
FLAG TERMINAL
22.5 DIA.
5.2 (0.20) DIA.
(0.89) MAX.
1.5 (0.06) DIA.
7.5
(0.30)
1/2"-20UNF-2A
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
2.4 (0.09)
29.5 (1.16)
4
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111RKI Series
Bulletin I25152 rev. C 05/97
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
N
2.6 (0.10) MAX.
I
M
)
4.3 (0.17) DIA.
7
3
.
0
(
5
.
9
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
C.S. 0.4 mm
(.0006 s.i.)
RED SILICON RUBBER
RED CATHODE
WHITE GATE
Fast-on Terminals
AMP. 280000-1
REF-250
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
140
130
120
110
100
90
140
111RKI Se rie s
(DC ) = 0.27 K/W
111RKI Se rie s
R
R
(DC ) = 0.27 K/ W
thJC
thJC
130
120
110
100
90
Co n d uc tio n Pe rio d
C o nd uc tio n An g le
30°
60°
90°
90°
60°
120°
80
120°
30°
180°
DC
180°
80
70
0
20
40
60
80
100 120
0
20 40 60 80 100 120 140 160 180
Ave ra g e O n-sta te C urre n t (A)
Ave ra g e On-sta te C urre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
5
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111RKI Series
Bulletin I25152 rev. C 05/97
160
R
180°
120°
90°
60°
30°
0
.
6
140
120
100
80
=
K
/
W
0
.
3
K
/
W
-
D
1
e
K
l
/
t
W
a
RMS Lim it
R
2
C o nd uc tion Ang le
K
/
60
W
40
4
5
K
/ W
111RKI Se rie s
T
= 140°C
20
J
K
/
W
0
0
20
40
60
80
100
12
0
20
40
60
80 100 120 140
Ave ra g e On-sta te Curre nt (A)
Ma xim um Allow a b le Am b ie n t Te m p e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
220
200
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
0
.
6
K
/
W
1
K
RMS Lim it
/
W
1
2
.
5
C o nd u ctio n Pe riod
K
/
W
K
/
W
60
111RKI Se rie s
40
4
5
K
/
W
W
T
= 140°C
J
20
K
/
0
0
20 40 60 80 100 120 140 160 1
40
60
80 100 120 140
Ave ra g e On-sta te C urre nt (A)
Fig. 4 - On-state Power Loss Characteristics
2000
1800
1600
1400
1200
1000
800
2500
2000
1500
1000
500
At Any Ra te d Lo a d Co nd itio n An d With
Ma ximum No n Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tion . C on trol
Of C on d uc tion Ma y No t Be Ma inta in e d .
Ra te d V
Ap p lie d Fo llo win g Surg e .
RRM
Initia l T = 140°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 140°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
111RKI Se rie s
111RKI Se rie s
1
10
100
0.01
0.1
1
10
Numb er Of Eq ua l Am p litud e Ha lf C yc le C urren t Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
6
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111RKI Series
Bulletin I25152 rev. C 05/97
10000
1000
100
10
T = 25°C
J
T = 140°C
J
111RKI Se rie s
1
0
1
2
3
4
5
Insta nta n e o us O n-sta te Volta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.27 K/ W
R
thJC
(DC Op e ra tio n)
0.1
0.01
0.001
111RKI Se rie s
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
a ) Re c o mme nd e d lo a d line fo r
ra te d d i/ d t: 20V, 30ohm s;
tr<=0.5 µs, tp =>6µs
b ) Re c om me n d e d loa d lin e for
<=30% ra te d d i/ d t: 15V, 40oh ms
(a )
tr<=1 µs, tp=>6µs
(b )
(2) (3)
(1)
(4)
VG D
IGD
0.01
De vic e : 111RKI Se rie s
Fre q ue nc y Limite d b y PG (AV)
10 100 1000
0.1
0.001
0.1
1
Insta nta ne ous G a te C urre n t (A)
Fig. 9 - Gate Characteristics
7
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