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112RKI120S90 [INFINEON]

PHASE CONTROL THYRISTORS Stud Version; 相位控制晶闸管梭哈版本
112RKI120S90
型号： 112RKI120S90
厂家： Infineon    Infineon
描述：

PHASE CONTROL THYRISTORS Stud Version
相位控制晶闸管梭哈版本
文件： 总7页 (文件大小：177K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Previous Datasheet  
Index  
Next Data Sheet  
/B  
111RKISERIES  
PHASE CONTROL THYRISTORS  
Stud Version  
Features  
110A  
High current and high surge ratings  
dv/dt = 1000V/µs option  
Ceramic housing  
Threaded studs UNF 1/2 - 20UNF2A  
Types up to 1200V VRRM/VDRM  
di/dt = 300A/µs  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
111RKI  
Units  
110  
90  
A
°C  
@ TC  
IT(RMS)  
ITSM  
172  
A
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
2080  
2180  
21.7  
19.8  
A
A
I2t  
KA2s  
KA2s  
V
DRM/VRRM  
400 to 1200  
110  
V
case style  
t
typical  
µs  
q
TO-209AC (TO-94)  
TJ  
- 40 to 140  
°C  
To Order  
 
 
Previous Datasheet  
Index  
Next Data Sheet  
11
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
Type number Code  
peak and off-state voltage  
V
repetitive peak voltage  
V
@ TJ = TJ max.  
mA  
40  
400  
500  
111RKI  
80  
800  
900  
20  
120  
1200  
1300  
On-state Conduction  
Parameter  
111RKI  
Units Conditions  
IT(AV) Max. average on-state current  
@ Case temperature  
110  
90  
A
180° conduction, half sine wave  
°C  
IT(RMS) Max. RMS on-state current  
172  
2080  
2180  
1750  
1830  
21.7  
19.8  
15.3  
14.0  
217  
DC @ 83°C case temperature  
t = 10ms No voltage  
t = 8.3ms reapplied  
12  
ITSM  
Max. peak, one-cycle  
non-repetitive surge current  
A
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
KA2s  
I2√t  
Maximum I2√t for fusing  
KA2√s t = 0.1 to 10ms, no voltage reapplied  
VT(TO)1 Low level value of threshold  
voltage  
0.82  
1.02  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
slope resistance  
2.16  
1.70  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
Maximum holding current  
Typical latching current  
1.57  
150  
400  
V
I = 350A, TJ = TJ max., t = 10ms sine pulse  
pk p  
2222222222222  
mA  
TJ = 25°C, anode supply 6V resistive load  
IL  
Switching  
Parameter  
111RKI  
300  
Units Conditions  
di/dt Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20Ω, t ≤ 1µs  
r
A/µs  
TJ = TJ max, anode voltage ≤ 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
t
Typical delay time  
1
d
q
V = 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V  
Typical turn-off time  
110  
dv/dt = 20V/µs, Gate 0V 25Ω  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
111ies  
Fig. 3 - On-state Power Loss Characteristics  
Fig. 4 - On-state Power Loss Characteristics  
To Order  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Previous Datasheet  
Index  
Next Data Sheet  
11RKI Series  
Fig. 7 - On-state Voltage Drop Characteristics  
Fig. 8 - Thermal Impedance ZthJC Characteristic  
Fig. 9 - Gate Characteristics  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
11RKI Series  
Blocking  
Parameter  
111RKI  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max. linear to 80% rated VDRM  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
20  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
111RKI  
Units Conditions  
PGM  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
Maximum peak gate power  
12  
3.0  
3.0  
TJ = TJ max, t ≤ 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
TJ = TJ max, t ≤ 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
10  
V
TJ = TJ max, t ≤ 5ms  
p
-VGM Maximum peak negative  
gate voltage  
TYP.  
MAX.  
IGT  
DC gate current required  
to trigger  
TJ = - 40°C  
TJ = 25°C  
23  
180  
80  
-
100  
-
mA  
V
Max. required gate trigger/ cur-  
40  
TJ = 140°C  
TJ = - 40°C  
TJ = 25°C  
TJ = 140°C  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
VGT  
DC gate voltage required  
to trigger  
2.5  
1.6  
1
-
2
-
Max. gate current/ voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
6.0  
mA  
V
TJ = TJ max  
VGD  
0.25  
Thermal and Mechanical Specification  
Parameter  
111RKI  
Units Conditions  
°C  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 140  
-40 to 150  
stg  
RthJC Max. thermal resistance,  
0.27  
DC operation  
K/W  
junction to case  
RthCS Max. thermal resistance,  
0.1  
Mounting surface, smooth, flat and greased  
Non lubricated threads  
case to heatsink  
T
Mounting torque, ± 10%  
15.5  
(137)  
14  
Nm  
(lbf-in)  
Lubricated threads  
See Outline Table  
(120)  
130  
wt  
Approximate weight  
Case style  
g
TO - 209AC (TO-94)  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
111RKI ees  
∆RthJC Conduction  
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)  
Conduction angle Sinusoidal conduction Rectangular conduction Units  
Conditions  
TJ = TJ max.  
180°  
120°  
90°  
0.043  
0.052  
0.066  
0.096  
0.167  
0.031  
0.053  
0.071  
0.101  
0.169  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
11  
1
RKI 120  
4
1
2
3
5
12  
1
2
-
-
IT(AV) rated average output current (rounded/10)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)  
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)  
2 = Flag terminals (For Cathode and Gate Terminals)  
Thyristor  
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)  
Critical dv/dt: None = 500V/µsec  
S90 = 1000V/µsec  
Outline Table  
CERAMIC HOUSING  
FLAG TERMINAL  
22.5 DIA.  
5.2 (0.20) DIA.  
(0.89) MAX.  
1.5 (0.06) DIA.  
7.5  
(0.30)  
2222222222222  
1/2"-20UNF-2A  
Case Style TO-208AD (TO-83)  
All dimensions in millimeters (inches)  
2.4 (0.09)  
29.5 (1.16)  
To Order  
 
Previous Datasheet  
Index  
Next Data Sheet  
es  
Outline Table  
CERAMIC HOUSING  
1 6 .5 ( 0 .6 5 ) M A X.  
8 .5 (0 .3 3 ) D IA .  
2 .6 (0 .1 0 ) M AX .  
4 .3 (0 .1 7 ) D IA.  
F L E X IB L E L EA D  
2
C .S . 1 6 m m  
( .0 2 5 s.i.)  
2
C .S . 0 .4 m m  
R ED S IL IC O N R U B B ER  
(.0 0 0 6 s.i.)  
R E D C A T H O D E  
W H IT E G A T E  
Fast-on Terminals  
AMP. 280000-1  
REF-250  
2 1 5 (8 .4 6 )  
1 0 (0 .3 9 )  
R E D S H R I N K  
W H I T E S H R IN K  
2 2 .5 (0 .8 8 ) M AX . D IA .  
23  
SW 2 7  
1 /2 "-2 0 U N F -2 A  
2 9 .5 ( 1 .1 6 ) M A X .  
Case Style TO-209AC (TO-94)  
All dimensions in millimeters (inches)  
Fig. 2 - Current Ratings Characteristics  
Fig. 1 - Current Ratings Characteristics  
To Order  
 

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