ICE6N70FP [ICEMOS]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | ICE6N70FP |
| 厂家： | 
Icemos Technology |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：586K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
ICE6N70FP
Product Summary
ICE6N70FP N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS ID=250uA
TA=25oC
6A
Max
Min
Typ
Typ
700V
0.65Ω
26nC
rDS(on)
Qg
VGS=10V
HFALROEGEEN
VDS=480V
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
T0220 Full-PAK
Isolated (T0-220)
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
1=Gate, 2=Drain,
3=Source
, at Tj=25oC, unless otherwise specified
Maximum ratings b
Parameter
Symbol
Conditions
Value
Unit
A
Tc=25oC
6
18
160
3
Continuous drain current
ID
Pulsed drain current
Tc=25oC
A
ID, pulse
E AS
I AR
ID=3A
Avalanche energy, single pulse
Avalanche current, repetitive
mJ
A
limited by Tjmax
VDS=480V, ID=6A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50
Static
20
30
±
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
W
oC
Power dissipation
Ptot
65
Operating and storage temperature
Mounting torque
Tj, Tstg
-55 to +150
50
Ncm
M 2.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-6N70FP-000-3
05/15/2013
1
Preliminary Data Sheet
ICE6N70FP
Values
Unit
Parameter
Symbol
Conditions
Min
Typ Max
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
RthJA
T sold
b
-
-
-
-
-
-
3.5
68
oC/W
oC
Thermal resistance, junction-
ambient a
leaded
Soldering temperature, wave
soldering only allowed at leads
1.6mm (0.063in.) from
case for 10 s
260
o
Electrical characteristics ,
at Tj=25 C, unless otherwise specified
Static characteristics
V
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
Drain-source breakdown voltage
Gate threshold voltage
700
2.1
730
3
-
(BR)DSS
V
VGS(th)
3.9
VDS=700V, VGS=0V,
Tj=25oC
-
-
0.1
1
Zero gate voltage drain current
Gate source leakage current
IDSS
µA
VDS=700V, VGS=0V,
Tj=150oC
-
-
100
100
IGSS
VGS=±20 V, VDS=0V
nA
-
-
VGS=10V, ID=3A, Tj=25oC
0.65 0.75
Drain-source
on-state resistance
RDS (on)
Ω
VGS=10V, ID=3A,
Tj=150oC
-
-
2.0
4
-
Gate resistance
RG
f=1 MHZ, open drain
-
Ω
Dynamic characteristics
Ciss
Coss
Crss
gfs
Input capacitance
-
-
-
-
-
-
-
-
790
500
15
8
-
-
-
-
-
-
-
-
VGS=0 V, VDS=25 V,
f=1 MHz
Output capacitance
pF
S
Reverse transfer capacitance
VDS>2*ID*RDS, ID=3A
Transconductance
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
10
5
VDS=480V, VGS=10V,
ID=6A, RG=4Ω (External)
ns
Turn-off delay time
Fall time
67
4.5
SP-6N70FP-000-3
05/15/2013
2
Preliminary Data Sheet
ICE6N70FP
Values
Unit
Parameter
Symbol
Conditions
Min
Typ
Max
Gate charge characteristics
Qgs
Gate to source charge
-
-
-
-
5
-
-
-
-
Qgd
nC
V
Gate to drain charge
Gate charge total
10
26
5.5
VDS=480 V, ID=6A,
VGS=0 to 10 V
Qg
Gate plateau voltage
Vplateau
Reverse Diode
VSD
trr
VGS=0V, IS=IF
-
-
-
-
V
ns
µC
A
Diode forward voltage
1.0
300
2.9
25
1.2
Reverse recovery time
-
-
-
VRR=480V, IS=IF,
diFIdt=100 A/µS
Reverse recovery charge
Peak reverse recovery current
Qrr
Irm
SP-6N70FP-000-3
05/15/2013
3
Preliminary Data Sheet
ICE6N70FP
Transfer Characteristics
Output Characteristics
18
16
14
12
10
8
18
16
14
12
10
8
VGS=10 to 7V
6V
5V
6
6
4
4
TJ = 150˚C
2
2
25˚C
0
0
0
2
4
6
8
10
0
0
0
5
10
15
20
18
30
VGS - Gate-to-Source (V)
VDS - Drain-to-Source Voltage (V)
On Resistance vs Junction Temperature
On Resistance vs Drain Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
ID = 3A
VGS = 10V
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100 125 150
ID - Drain current (A)
TJ - Junction Temperature (˚C)
Gate Charge
Gate Threshold Voltage vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
VDS
=
480V
ID = 6A
ID = 250μA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
25
50
75
100 125 150
10
20
TJ - Junction Temperature (˚C)
Qg - Total Gate Charge (nC)
SP-6N70FP-000-3
05/15/2013
4
Preliminary Data Sheet
ICE6N70FP
Capacitance
Drain-to-Source Breakdown Voltage vs. Junction Temperature
10000
1000
100
10
1.2
Ciss
1.1
ID = 1mA
1.0
0.9
0.8
Coss
Crss
1
0
100
200
300
400
500
600
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (˚C)
VDS - Drain-to-Source Votlage (V)
Maximum Rated Forward Biased Safe Operating Area
Transient Thermal Response, Junction-to-Case
100
1.00
0.5
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
0.2
10
0.1
10us
0.10
0.05
100us
0.02
1
1ms
0.01
DC
Single Pulse
RDS(on) Limit
Package Limit
Thermal Limit
0.1
0.00
0.01
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
t - Time (seconds)
SP-6N70FP-000-3
05/15/2013
5
Preliminary Data Sheet
ICE6N70FP
SP-6N70FP-000-3
05/15/2013
6
Preliminary Data Sheet
ICE6N70FP
COMMON DIMENSIONS
MM
INCH
NOM
0.40
0.40
0.37
0.18
0.11
0.03
0.11
SYMBOL
MIN
9.63
9.94
9.36
4.30
2.34
0.43
2.51
NOM
10.19
10.04
9.46
4.60
2.77
MAX
10.75
10.14
9.56
4.90
3.20
1.30
2.93
MIN
0.38
0.39
0.37
0.17
0.092
0.017
0.10
MAX
0.42
0.40
0.38
0.19
0.126
0.051
0.12
E
E1
E2
A
A1
A2
A4
A5
c
D
Q
H1
E
ФP
L
L1
L2
ФP1
ФP2
ФP3
θ1
θ2
DEP
F1
F2
F3
F4
G
G1
G3
b1
b2
K1
R
0.87
2.72
1.00REF
0.54
0.39REF
0.021
0.626
0.370REF
0.264REF
0.100BSC
0.125REF
0.52
0.13
0.31
0.059
0.047
0.136REF
0.33
15.67
0.75
16.13
0.013
0.617
0.030
0.635
15.9
9.4REF
6.7REF
2.54BSC
3.18REF
13.25
3.25
12.78
2.83
7.70
1.4
13.72
3.67
7.90
1.6
0.50
0.11
0.30
0.055
0.045
0.54
0.14
0.31
0.063
0.049
7.80
1.5
1.2
1.15
1.25
3.45REF
3
5
45
7
3
5
7
°
-
°
-
°
°
-
°
-
°
45
°
°
0.05
1.0
0.10
1.50
13.90
3.30
5.40
8.00
6.58
1.35
1.31
0.78
0.15
2.0
0.002
0.039
0.543
0.126
0.209
0.307
0.238
0.049
0.048
0.024
0.026
0.004
0.059
0.547
0.130
0.213
0.315
0.259
0.053
0.051
0.031
0.028
0.020REF
0.006
0.079
0.551
0.134
0.217
0.323
0.280
0.057
0.054
0.037
0.030
13.8
3.20
5.30
7.80
6.05
1.25
1.23
0.61
0.65
14.0
3.40
5.50
8.20
7.10
1.45
1.38
0.94
0.75
0.70
0.50REF
SP-6N70FP-000-3
05/15/2013
7
Preliminary Data Sheet
ICE6N70FP
ICEMOS SUPERJUNCTION PATENT PORTFOLIO
ICEMOS GRANTED PATENTS
US7,429,772
US7,439,178
US7,446,018
US7,579,607
US7,723,172
US7,795,045
US7,846,821
US7,944,018
US8,012,806
US8,030,133
3D SEMI PATENTS LICENSED TO ICEMOS
US7,041,560B2
US7,023,069B2
US7,364,994
US7,227,197B2
US7,304,944B2
US7,052,982B2
US7,339,252
US7,410,891
US7,439,583
US7,227,197B2
US6,635,906
US6,936,867
US7,015,104
US9,109,110
US7,271,067
US7,354,818
US7,052,982,
US7,199,006B2
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.
SP-6N70FP-000-3
05/15/2013
8
Preliminary Data Sheet
ICE6N70FP
Marking Information
YY = Last two digits of the year
WW = Work week calendar on Icemos
subcon assembly & test house
YYWW *
XXXX00
ICE6N70
*
= Initial for Icemos subcon
assembly and test house
XXXX = Wafer Lot ID
00
= may be used for wafer ID in a
special case.
= "00" is used unless specified.
ICE6N70 = ICE is Icemos logo and 6N70
is a designated device part number
SP-6N70FP-000-3
05/15/2013
9
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