ICE73N199 [ICEMOS]

Enhancement Mode MOSFET; 增强型MOSFET


型号：	ICE73N199
厂家：	Icemos Technology
描述：	Enhancement Mode MOSFET 增强型MOSFET
文件：	总8页 (文件大小：706K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet

ICE73N199

Product Summary

ICE73N199 N-Channel

Enhancement Mode MOSFET

I_D

V_(BR)DSSI_D=250uA

T_A=25^oC

10A

730V

0.23Ω

62nC

Max

Min

Typ

r_DS(on)

Q_g

V_GS=10V

V_DS=480V

Features

• Low r_DS(on)

• Ultra Low Gate Charge

• High dv/dt capability

• High Unclamped Inductive Switching (UIS) capability

• High peak current capability

• Increased transconductance performance

• Optimized design for high performance power systems

T0220

Standard Metal

Heatsink

ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS

FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20

YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN

1=Gate, 2=Drain,

3=Source.

USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.

, at T_j=25^oC, unless otherwise specified

Maximum ratings ^b

Parameter

Symbol

Conditions

Value

Unit

T_c=25^oC

Continuous drain current

I_D

I_{D, pulse}

E _AS

I _AR

Pulsed drain current

T_c=25^oC

I_D=7.5A

Avalanche energy, single pulse

Avalanche current, repetitive

280

7.5

limited by T_jmax

V_DS=480V, I_D=10A,

T_j=125^oC

V/ns

MOSFET dv/dt ruggedness

dv/dt

Static

Gate source voltage

V_GS

AC (f>1Hz)

T_c=25^oC

Power dissipation

P_tot

208

^oC

Operating and storage temperature

Mounting torque

T_j, T_stg

-55 to +150

Ncm

M 3 & 3.5 screws

a When mounted on 1inch square 2oz copper clad FR-4

b Preliminary Data Sheet – Specifications subject to change

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

Values

Unit

Parameter

Symbol

Conditions

Min

Typ Max

Thermal characteristics

Thermal resistance, junction-

case ^a

R_thJC

R_thJA

T _sold

0.7

^oC/W

^oC

Thermal resistance, junction-

ambient ^a

leaded

Soldering temperature, wave

soldering only allowed at leads

1.6mm (0.063in.) from

case for 10 s

260

Electrical characteristics ,

at T_j=25 C, unless otherwise specified

Static characteristics

V_GS=0 V, I_D=250µA

V_DS=V_GS, I_D=250µA

Drain-source breakdown voltage

Gate threshold voltage

730

2.5

760

(BR)DSS

V_GS(th)

3.5

V_DS=730V, V_GS=0V,

T_j=25^oC

0.5

Zero gate voltage drain current

Gate source leakage current

I_DSS

µA

V_DS=730V, V_GS=0V,

T_j=150^oC

100

I_GSS

V_GS=±20 V, V_DS=0V

V_GS=10V, I_D=5A, T_j=25^oC

0.23 0.25

Drain-source

on-state resistance

R_{DS (on)}

Ω

V_GS=10V, I_D=5A,

T_j=150^oC

0.68

4.3

Gate resistance

R_G

f=1 MHZ, open drain

Ω

Dynamic characteristics

C_iss

C_oss

C_rss

g_fs

Input capacitance

2020

980

V_GS=0 V, V_DS=25 V,

f=1 MHz

Output capacitance

Reverse transfer capacitance

V_DS>2*I_D*R_DS, I_D=5A

Transconductance

Turn-on delay time

Rise time

3.5

t_d(on)

t_r

t_d(off)

t_f

V_DS=380V, V_GS=10V,

I_D=10A, R_G=4Ω (External)

Turn-off delay time

Fall time

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

Values

Unit

Parameter

Symbol

Conditions

Min

Typ

Max

Gate charge characteristics

Q_gs

Gate to source charge

5.8

Q_gd

Gate to drain charge

Gate charge total

V_DS=480 V, I_D=10A,

V_GS=10 V

Q_g

Gate plateau voltage

V_plateau

Reverse Diode

V_SD

t_rr

V_GS=0V, I_S=I_F

µC

Diode forward voltage

0.9

407

6.7

1.2

Reverse recovery time

V_RR=480V, I_S=I_F,

d_iFId_t=100 A/µS

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rm

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

COMMON DIMENSIONS

NOM

4.525

1.30

2.57

0.775

1.18

INCH

NOM

SYMBOL

MIN

4.35

1.20

2.35

0.65

1.00

0.34

0.33

MAX

4.70

1.40

2.79

0.90

1.36

0.47

0.60

MIN

MAX

0.171 0.178 0.185

0.047 0.512 0.055

0.093 0.101 0.110

0.260 0.031 0.035

0.039 0.046 0.054

0.013 0.015 0.019

0.013 0.018 0.024

0.381

0.465

14.70 15.325 15.95 0.579 0.603 0.628

8.60

9.96

9.025

9.45

0.339 0.355 0.372

10.16 10.36 0.392 0.400 0.408

10.10 10.25 10.35 0.398 0.404 0.407

10.00 10.10 10.20 0.394 0.398 0.402

2.54 BSC

5.08 BSC

6.30

0.100 BSC

0.200 BSC

0.240 0.248 0.256

6.10

6.50

12.70 13.35 14.00 0.520 0.526 0.551

ФP

—

3.75

2.50 REF

3.715

4.75

—

0.148 0.187

0.098 REF

3.55

2.60

3.88

2.90

0.140 0.146 0.153

0.102 0.108 0.114

2.743

θ1

θ2

ФP1

DEP

1.40

0.05

1.75

0.10

2.10

0.20

0.055 0.069 0.083

0.002 0.004 0.008

SP-73N199-000-2

04/16/2013

Preliminary Data Sheet

ICE73N199

ICEMOS SUPERJUNCTION PATENT PORTFOLIO

ICEMOS GRANTED PATENTS

US7,429,772

US7,439,178

US7,446,018

US7,579,607

US7,723,172

US7,795,045

US7,846,821

US7,944,018

US8,012,806

US8,030,133

3D SEMI PATENTS LICENSED TO ICEMOS

US7,041,560B2

US7,023,069B2

US7,364,994

US7,227,197B2

US7,304,944B2

US7,052,982B2

US7,339,252

US7,410,891

US7,439,583

US7,227,197B2

US6,635,906

US6,936,867

US7,015,104

US9,109,110

US7,271,067

US7,354,818

US7,052,982,

US7,199,006B2

Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for

Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.

SP-73N199-000-2

04/16/2013

ICE73N199 [ICEMOS]

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