ICE8N73 [ICEMOS]
Enhancement Mode MOSFET; 增强型MOSFET型号: | ICE8N73 |
厂家: | Icemos Technology |
描述: | Enhancement Mode MOSFET |
文件: | 总8页 (文件大小:703K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Data Sheet
ICE8N73
Product Summary
ICE8N73 N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS ID=250uA
TA=25oC
8A
Max
Min
Typ
Typ
730V
0.38Ω
41nC
rDS(on)
Qg
VGS=10V
VDS=480V
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
T0220
Standard Metal
Heatsink
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
1=Gate, 2=Drain,
3=Source.
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
, at Tj=25oC, unless otherwise specified
Maximum ratings b
Parameter
Symbol
Conditions
Value
8
Unit
A
Tc=25oC
Continuous drain current
ID
ID, pulse
E AS
I AR
Pulsed drain current
Tc=25oC
24
A
ID=4A
Avalanche energy, single pulse
Avalanche current, repetitive
340
4
mJ
A
limited by Tjmax
VDS=480V, ID=8A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50
Static
20
30
±
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
W
Power dissipation
Ptot
85
oC
Operating and storage temperature
Mounting torque
Tj, Tstg
-55 to +150
60
Ncm
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-8N73-000-3
04/16/2013
1
Preliminary Data Sheet
ICE8N73
Values
Unit
Parameter
Symbol
Conditions
Min
Typ Max
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
RthJA
T sold
b
-
-
-
-
-
-
1.3
62
oC/W
oC
Thermal resistance, junction-
ambient a
leaded
Soldering temperature, wave
soldering only allowed at leads
1.6mm (0.063in.) from
case for 10 s
260
o
Electrical characteristics ,
at Tj=25 C, unless otherwise specified
Static characteristics
V
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
Drain-source breakdown voltage
Gate threshold voltage
730
2.1
760
3
-
(BR)DSS
V
VGS(th)
3.9
VDS=730V, VGS=0V,
Tj=25oC
-
-
0.5
5
Zero gate voltage drain current
Gate source leakage current
IDSS
µA
VDS=730V, VGS=0V,
Tj=150oC
-
-
100
100
IGSS
VGS=±20 V, VDS=0V
nA
-
-
VGS=10V, ID=4A, Tj=25oC
0.38 0.45
Drain-source
on-state resistance
RDS (on)
Ω
VGS=10V, ID=4A,
Tj=150oC
-
-
0.95
5
-
-
Gate resistance
RG
f=1 MHZ, open drain
Ω
Dynamic characteristics
Ciss
Coss
Crss
gfs
Input capacitance
-
-
-
-
-
-
-
-
1250
600
5
-
-
-
-
-
-
-
-
VGS=0 V, VDS=25 V,
f=1 MHz
Output capacitance
pF
S
Reverse transfer capacitance
VDS>2*ID*RDS, ID=4A
Transconductance
Turn-on delay time
Rise time
12
6
td(on)
tr
td(off)
tf
3.5
54
7
VDS=480V, VGS=10V,
ID=8A, RG=4Ω (External)
ns
Turn-off delay time
Fall time
SP-8N73-000-3
04/16/2013
2
Preliminary Data Sheet
ICE8N73
Values
Unit
Parameter
Symbol
Conditions
Min
Typ
Max
Gate charge characteristics
Qgs
Gate to source charge
-
-
-
-
7.1
14
-
-
-
-
Qgd
nC
V
Gate to drain charge
Gate charge total
VDS=480 V, ID=8A,
VGS=0 to 10 V
Qg
41
Gate plateau voltage
Vplateau
5.2
Reverse Diode
VSD
trr
VGS=0V, IS=IF
-
-
-
-
V
ns
µC
A
Diode forward voltage
0.9
330
4.4
25
1.2
Reverse recovery time
-
-
-
VRR=480V, IS=IF,
diFIdt=100 A/µS
Reverse recovery charge
Peak reverse recovery current
Qrr
Irm
SP-8N73-000-3
04/16/2013
3
Preliminary Data Sheet
ICE8N73
SP-8N73-000-3
04/16/2013
4
Preliminary Data Sheet
ICE8N73
SP-8N73-000-3
04/16/2013
5
Preliminary Data Sheet
ICE8N73
SP-8N73-000-3
04/16/2013
6
Preliminary Data Sheet
ICE8N73
COMMON DIMENSIONS
MM
NOM
4.525
1.30
2.57
0.775
1.18
INCH
NOM
SYMBOL
MIN
4.35
1.20
2.35
0.65
1.00
0.34
0.33
MAX
4.70
1.40
2.79
0.90
1.36
0.47
0.60
MIN
MAX
0.185
0.055
0.110
0.035
0.054
0.019
0.024
0.628
0.372
0.408
0.407
0.402
A
A1
A2
b
b2
c
c1
D
D1
E
E1
E2
e
e1
H1
L
L1
L2
ФP
Q
θ1
θ2
ФP1
DEP
0.171
0.047
0.093
0.260
0.039
0.013
0.013
0.579
0.339
0.392
0.398
0.394
0.178
0.512
0.101
0.031
0.046
0.015
0.018
0.603
0.355
0.400
0.404
0.398
0.100 BSC
0.200 BSC
0.248
0.526
0.148
0.098 REF
0.146
0.108
7°
0.381
0.465
14.70 15.325 15.95
8.60
9.96
10.10
10.00
9.025
10.16
10.25
10.10
2.54 BSC
5.08 BSC
6.30
13.35
3.75
2.50 REF
3.715
2.743
7°
9.45
10.36
10.35
10.20
6.10
12.70
—
6.50
14.00
4.75
0.240
0.520
—
0.256
0.551
0.187
3.55
2.60
5°
1°
1.40
0.05
3.88
2.90
9°
5°
2.10
0.20
0.140
0.102
5°
1°
0.055
0.002
0.153
0.114
9°
5°
0.083
0.008
3°
1.75
0.10
3°
0.069
0.004
SP-8N73-000-3
04/16/2013
7
Preliminary Data Sheet
ICE8N73
ICEMOS SUPERJUNCTION PATENT PORTFOLIO
ICEMOS GRANTED PATENTS
US7,429,772
US7,439,178
US7,446,018
US7,579,607
US7,723,172
US7,795,045
US7,846,821
US7,944,018
US8,012,806
US8,030,133
3D SEMI PATENTS LICENSED TO ICEMOS
US7,041,560B2
US7,023,069B2
US7,364,994
US7,227,197B2
US7,304,944B2
US7,052,982B2
US7,339,252
US7,410,891
US7,439,583
US7,227,197B2
US6,635,906
US6,936,867
US7,015,104
US9,109,110
US7,271,067
US7,354,818
US7,052,982,
US7,199,006B2
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.
SP-8N73-000-3
04/16/2013
8
相关型号:
©2020 ICPDF网 联系我们和版权申明