1SS344 [HTSEMI]

SCHOTTKY BARRIER DIODE; 肖特基二极管


型号：	1SS344
厂家：	SHENZHEN JIN YU SEMICONDUCTOR CO., LTD.
描述：	SCHOTTKY BARRIER DIODE 肖特基二极管肖特基二极管
文件：	总1页 (文件大小：243K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1SS344

SOT-23

SCHOTTKY BARRIER DIODE

FEATURES

 Low Forward Voltage

 Fast Reverse Recovery Time

 High Forward Current

APPLICATIONS

 High Speed Switching

MARKING: H9

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

DC Blocking Voltage

V_R

Forward Continuous Current

Peak Forward Current

500

I_O

1.5

I_FM

Surge Current@10ms

I_FSM

P_D

Power Dissipation

200

℃/W

℃

Thermal Resistance From Junction To Ambient

Junction Temperature

500

R_θJA

T_j

125

Storage Temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)

I_R=100μA

V_R=10V

Reverse voltage

I_R

μA

Reverse current

Forward voltage

V_R=20V

100

0.35

0.43

0.55

I_F=10mA

I_F=100mA

I_F=500mA

V_F

C_tot

t_rr

V_R=0V, f=1MHz

120

Total capacitance

I_F= I_R=50mA, V_R=6V

Reverse recovery time

JinYu

semiconductor

www.htsemi.com

Date:2011/05

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