1SS345 [KEXIN]

Sillicon Epitaxial Schottky Barrier Diode; 酸化镍外延肖特基二极管

1SS345


型号：	1SS345
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Sillicon Epitaxial Schottky Barrier Diode 酸化镍外延肖特基二极管肖特基二极管
文件：	总1页 (文件大小：35K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Diodes

Sillicon Epitaxial Schottky Barrier Diode

1SS345

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

3

Small interterminal capacitance (C=0.45pF typ).

Low forward voltage and excellent detection efficiency(VF=0.35V max)

High breakdown voltage (VR=55V).

1

2

+0.1

0.95

-0.1

+0.05

0.1

-0.01

Very small-sized package permitting the 1SS345-applied sets to be made small and slim.

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Symbol

Value

Unit

V

V^R

I^F

55

Forward Current

10

mA

mW

Power Dissipation

Junction Temperature

Storage temperature

Reverse Burning

P

150

T^j

125

-55 to +125

2

Tstg

Bo

C = 25 pF

erg

Electrical Characteristics Ta = 25

Parameter

Forward Voltage

Symbol

Conditions

Min

Typ

Max

0.35

Unit

V

V^R

I^F

IF = 1 mA

VF = 1 V

Forward Current

10

55

mA

V

Reverse Voltage

V^R

IR

IR = 100

A

Reverse Current

VR = 40 V

50

A

Interterminal Capacitance

C

V^R= 10 V, f = 1 MHz

0.45

pF

Marking

Marking

AH

1

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