HE8550S [HSMC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | HE8550S |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
TO-92
• High DC Current gain: 100-500 at IC=150mA
• Complementary to HE8050S
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-25
-20
-5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
-1
-0.5
-1
500
-
-
-
100
-
150
-
100
-
-
-
10
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hEF
Rank
C
C1
D
D1
E
hFE1
hFE2
100-180
-
100-180
>100
160-300
-
160-300
>100
250-500
-
HE8550S
HSMC Product Specification
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 2/4
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
100
10
125oC
CE(sat)
V
C
B
@ I =10I
25oC
75oC
100
125oC
25oC
75oC
CE
hFE @ V =1V
10
1
1
10
100
1000
0.1
1
10
Collector Current-I (mA)
100
1000
C
C
Collector Current-I (mA)
ON Voltage & Collector Current
Cutoff Frequency & Collector Current
1000
100
10
10000
BE(ON)
CE
V
@ V =1V
CE
V
=10V
75oC
1000
25oC
125oC
100
1
1
10
100
1000
1
10
100
1000
C
Collector Current-I (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
Safe Operating Area
100
10000
1000
100
10
PT=1ms
PT=100ms
PT=1s
Cob
10
1
1
0.1
1
10
100
1
10
100
Reverse-Biased Voltage (V)
Forward Voltage (V)
HE8550S
HSMC Product Specification
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 3/4
HI-SINCERITY
MICROELECTRONICS CORP.
PD-Ta
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature-Ta (oC)
HE8550S
HSMC Product Specification
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 4/4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
α2
α3
Marking:
A
H
S A
1 5 3 8 S
B
C
Rank
1
2
3
Date Code
Control Code
Style: Pin 1.Emitter 2.Collector 3.Base
D
H
G
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Millimeters
DIM
Inches
Min. Max.
0.0142 0.0220
Millimeters
DIM
Min.
Max.
Min.
4.33
4.33
12.70
0.36
-
Max.
4.83
4.83
-
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
G
H
I
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
-
0.56
*1.27
3.76
α1
α2
α3
-
*2°
*2°
*2°
3.36
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HE8550S
HSMC Product Specification
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