HE8551 [HSMC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | HE8551 |
| 厂家： | 
HI-SINCERITY MOCROELECTRONICS |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HE8551
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8551 is designed for use in 2W output amplifier of portable radios
in class B push-pull operation.
Features
• High Total Power Dissipation (PT: 2W, TC=25°C)
• High Collector Current (IC: 1.5A)
• Complementary to HE8051
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ...................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-2mA, IB=0
IE=-100uA, IC=0
VCB=-35V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
-40
-25
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
-100
-100
-0.5
-1.2
-1
IEBO
VEB=-6V, IC=0
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHz
-
-
V
V
45
85
40
100
-
500
-
-
fT
MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification on hFE2
Rank
B
C
D
E
Range
85-160
120-200
190-300
250-500
HSMC Product Specification
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 2/3
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
100
10
10000
1000
100
10
CE
hFE @ V =1V
BE(sat)
V
C
@ I =10IB
CE (sat)
V
C
B
@ I =10I
1
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
10000
100
10
1
Cob
1000
BE(on)
CE
V
@ V =1V
100
0.1
1
10
100
1
10
100
1000
10000
Collector Current (mA)
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
Safe Operating Area
1000
10000
1000
100
10
PT=1ms
PT=100ms
PT=1s
CE
=10V
V
100
10
1
1
10
100
1000
1
10
Forward Voltage-V (V)
100
CE
Collector Current (mA)
HSMC Product Specification
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 3/3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
α
α
2
3
Marking :
A
HSMC Logo
Part Number
Date Code
Product Series
B
C
1
2
3
Rank
Laser Mark
HSMC Logo
Product Series
D
Part Number
H
G
Ink Mark
Style : Pin 1.Emitter 2.Base 3.Collector
α
1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code : A
*:Typical
Inches
Max.
Millimeters
DIM
Inches
Min.
0.0142
Millimeters
DIM
Min.
Min.
4.33
4.33
12.70
0.36
-
Max.
4.83
4.83
-
Max.
0.0220
*0.1000
*0.0500
*5°
Min.
0.36
Max.
0.56
*2.54
*1.27
*5°
A
B
C
D
E
F
0.1704
0.1704
0.5000
0.0142
-
0.1902
0.1902
-
0.0220
*0.0500
0.1480
G
H
I
-
-
-
-
-
-
-
-
-
-
0.56
*1.27
3.76
α1
α2
α3
*2°
*2°
*2°
0.1323
3.36
*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
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