HE8551 [UTC]
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR; 低压大电流小信号PNP晶体管
| 型号： | HE8551 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8551 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8051
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
-40
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25℃)
Collector Current
-25
-6
1
Ic
-1.5
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Ic=-100µA,IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
-40
-25
-6
V
V
V
nA
nA
Ic=-2mA,IB=0
IE=-100µA,Ic=0
VCB=-35V,IE=0
VEB=-6V,Ic=0
-100
-100
Emitter Cut-Off Current
IEBO
DC Current Gain(note)
hFE1
VCE=-1V,Ic=-5mA
VCE=-1V,Ic=-100mA
VCE=-1V,Ic=-800mA
Ic=-800mA,IB=-80mA
Ic=-800mA,IB=-80mA
VCE=-1V,Ic=-10mA
VCE=-10V,Ic=-50mA
VCB=-10V,IE=0
45
85
40
170
160
80
-0.28 -0.5
-0.98 -1.2
-0.66 -1.0
190
hFE2
500
hFE3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
VBE
fT
Cob
V
V
V
MHz
pF
100
9.0
f=1MHz
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R201-047,A
UTC HE8551 PNP EPITAXIAL SILIC ON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
250-500
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
-0.5
-0.4
3
3
10
-10
VCE=-1V
VCE=-1V
IB
=-3.0mA
2
2
10
-10
-0.3
-0.2
I
B=-2.5mA
IB
=-2.0mA
IB=-1.5mA
1
1
10
-10
I
B
=-1.0mA
-0.1
0
IB=-0.5mA
0
0
10
-10
-0
-0.4
-0.8
-1.2
-1.6
-2.0
-1
-10
0
1
2
3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-10
-10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
3
10
-10
10
Ic=10*I
B
VCE=-10V
f=1MHz
IE=0
3
2
2
10
VBE(sat)
-10
10
2
1
1
10
-10
10
VCE(sat)
1
0
0
10
-10
-10
10
-1
-10
0
1
2
3
-10
0
1
2
3
0
1
2
3
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R201-047,A
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