HMC565LC5 [HITTITE]

GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz; 砷化镓PHEMT SMT低噪声放大器, 6 - 20 GHz的
HMC565LC5
型号: HMC565LC5
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz
砷化镓PHEMT SMT低噪声放大器, 6 - 20 GHz的

射频和微波 射频放大器 微波放大器 PC
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HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
Typical Applications  
The HMC565LC5 is ideal for use as a LNA or driver  
amplifier for:  
Features  
Noise Figure: 2.5 dB  
Gain: 21 dB  
• Point-to-Point Radios  
OIP3: 20 dBm  
• Point-to-Multi-Point Radios & VSAT  
• Test Equipment and Sensors  
• Military & Space  
Single Supply: +3V @ 53 mA  
50 Ohm Matched Input/Output  
RoHS Compliant 5 x 5 mm Package  
Functional Diagram  
General Description  
The HMC565LC5 is a high dynamic range GaAs  
PHEMT MMIC Low Noise Amplifier housed in a  
leadless RoHS compliant 5x5mm SMT package.  
Operating from 6 to 20 GHz, the HMC565LC5  
features 21 dB of small signal gain, 2.5 dB noise  
figure and IP3 of +20 dBm across the operating  
band. This self-biased LNA is ideal for microwave  
radios due to its single +3V supply operation, and DC  
blocked RF I/O’s.  
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V  
Parameter  
Min.  
Typ.  
6 - 12  
21  
Max.  
Min.  
16  
Typ.  
12 - 20  
18.5  
0.025  
2.5  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
19  
Gain Variation Over Temperature  
Noise Figure  
0.025  
2.5  
15  
0.035  
2.8  
0.035  
3
dB/ °C  
dB  
Input Return Loss  
12  
dB  
Output Return Loss  
13  
15  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Total Supply Current (Idd)(Vdd = +3V)  
8
10  
9
11  
dBm  
dBm  
dBm  
mA  
11  
13  
20  
21  
53  
75  
53  
75  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
Broadband Gain & Return Loss  
Gain vs. Temperature  
30  
20  
10  
0
30  
25  
20  
S21  
S11  
S22  
15  
+25C  
+85C  
-40C  
-10  
-20  
-30  
10  
5
0
0
5
10  
15  
20  
25  
30  
21  
21  
5
7
9
11  
13  
15  
17  
19  
21  
21  
21  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
+25C  
+25C  
+85C  
-40C  
-5  
-10  
-15  
-20  
-25  
-5  
+85C  
-40C  
-10  
-15  
-20  
-25  
5
7
9
11  
13  
15  
17  
19  
5
7
9
11  
13  
15  
17  
19  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Noise Figure vs. Temperature  
Output IP3 vs. Temperature  
10  
30  
8
25  
20  
+25C  
+85C  
-40C  
6
4
2
0
15  
+25C  
+85C  
-40C  
10  
5
5
7
9
11  
13  
15  
17  
19  
5
7
9
11  
13  
15  
17  
19  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 185  
HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
P1dB vs.Temperature  
Psat vs.Temperature  
20  
20  
16  
12  
8
16  
12  
8
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
4
4
0
0
5
7
9
11  
13  
15  
17  
19  
21  
5
7
9
11  
13  
15  
17  
19  
21  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs.Temperature  
Power Compression @ 12 GHz  
0
25  
-10  
20  
+25C  
+85C  
-40C  
Pout  
Gain  
PAE  
-20  
-30  
-40  
-50  
-60  
15  
10  
5
0
-5  
5
7
9
11  
13  
15  
17  
19  
21  
-20  
-15  
-10  
-5  
FREQUENCY (GHz)  
INPUT POWER (dBm)  
Gain, Noise Figure & Power vs.  
Supply Voltage @ 12 GHz  
10  
9
8
7
6
5
4
3
2
1
0
25  
20  
15  
10  
5
Gain  
P1dB  
Noise Figure  
0
2.5  
3
3.5  
Vdd (Vdc)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 186  
HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
Typical Supply Current vs. Vdd  
Absolute Maximum Ratings  
Vdd (Vdc)  
Idd (mA)  
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)  
RF Input Power (RFIN)(Vdd = +3.0 Vdc)  
Channel Temperature  
+3.5 Vdc  
+2.5  
51  
53  
56  
0 dBm  
+3.0  
175 °C  
+3.5  
Continuous Pdiss (T= 85 °C)  
(derate 8.5 mW/°C above 85 °C)  
0.753 W  
Thermal Resistance  
(channel to ground paddle)  
119.5 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL: ALUMINA  
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES  
GOLD OVER 50 MICROINCHES MINIMUM NICKEL  
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE  
SOLDERED TO PCB RF GROUND  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 187  
HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1, 2, 6-19,  
23-25, 27,  
29, 31, 32  
This pin may be connected to RF/DC ground.  
Performance will not be affected.  
N/C  
These pins and package bottom must be  
connected to RF/DC ground.  
3, 5, 20, 22  
GND  
4
RFIN  
This pin is AC coupled and matched to 50 Ohms.  
This pin is AC coupled and matched to 50 Ohms.  
21  
RFOUT  
Power Supply Voltage for the amplifier. External bypass  
capacitors of 100 pF and 2.2 μF are required.  
30, 28, 26  
Vdd1, 2, 3  
Application Circuit  
Component Value  
C1, C2, C3  
C4, C5, C6  
100 pF  
2.2 μF  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 188  
HMC565LC5  
v00.0906  
GaAs SMT PHEMT LOW NOISE  
AMPLIFIER, 6 - 20 GHz  
4
Evaluation PCB  
List of Materials for Evaluation PCB 110431 [1]  
The circuit board used in the final application should  
use RF circuit design techniques. Signal lines  
should have 50 ohm impedance while the package  
ground leads and exposed paddle should be con-  
nected directly to the ground plane similar to that  
shown. A sufficient number of via holes should be  
used to connect the top and bottom ground planes.  
The evaluation board should be mounted to an  
appropriate heat sink. The evaluation circuit board  
shown is available from Hittite upon request.  
Item  
Description  
J1 - J2  
J3  
PCB Mount K Connector  
2 mm DC Header  
C1 - C3  
C4 - C6  
U1  
100 pF Capacitor, 0402 Pkg.  
2.2 μF Capacitor, Tantalum  
HMC565LC5 Amplifier  
109001 Evaluation PCB  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
4 - 189  

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