HMC566LP4_09 [HITTITE]
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz; 砷化镓pHEMT的MMIC低噪声放大器， 28 - 36 GHz的
| 型号： | HMC566LP4_09 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz |
| 文件： | 总6页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
Typical Applications
The HMC566LP4E is ideal for:
• Point-to-Point Radios
Features
Low Noise Figure: 2.8 dB
High Gain: 21 dB
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
High OIP3: +24 dBm
Single Positive Supply: +3V @ 82 mA
50 Ohm Matched & DC Blocked I/Os
24 Lead 4x4mm QFN Package: 16mmꢀ
General Description
Functional Diagram
The HMC566LP4E is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) in a
4x4 mm SMT package which operates from 28 to
36 GHz. The HMC566LP4E provides 21 dB of small
signal gain, 2.8 dB of noise figure and output IP3 of
24 dBm. This self-biased LNA is ideal for hybrid and
MCM assemblies due to its compact size, single
+3V supply operation, and DC blocked RF I/O’s.
The RoHS packaged HMC566LP4E eliminates the
need for wirebonding and allows the use of high
volume surface mount manufacturing techniques.
The HMC566LP4E is also available in chip form as
the HMC566.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3, 4 = +3V
Parameter
Min.
Typ.
28 - 31.5
21
Max.
Min.
Typ.
31.5 - 33.5
22.5
0.03
2.8
Max.
3.6
Min.
18
Typ.
33.5 - 36
21
Max.
4.3
Units
GHz
dB
Frequency Range
Gain
18
19.5
Gain Variation Over Temperature
Noise Figure
0.03
2.8
0.03
3.3
dB/ °C
dB
3.6
Input Return Loss
14
18
12
dB
Output Return Loss
8
10
7
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2+Idd3+Idd4)
11
12
11
dBm
dBm
dBm
mA
13
14
13
23.5
82
24.5
82
24.5
82
50
106
50
106
50
106
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
30
28
26
24
22
20
18
S21
S11
S22
0
-5
-10
-15
-20
-25
16
14
12
10
+25 C
+85 C
- 40 C
22
24
26
28
30
32
34
36
38
40
38
38
26
28
30
32
34
36
38
38
38
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25 C
-5
+85 C
- 40 C
-5
-10
-15
-20
-25
-30
-10
+25 C
+85 C
- 40 C
-15
-20
26
28
30
32
34
36
26
28
30
32
34
36
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
10
0
-10
+25 C
+85 C
-40 C
8
6
4
2
0
-20
+25 C
+85 C
- 40 C
-30
-40
-50
-60
-70
26
28
30
32
34
36
26
28
30
32
34
36
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 191
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
P1dB vs. Temperature
Psat vs. Temperature
18
18
16
14
12
10
8
16
14
12
10
8
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
6
6
4
4
26
28
30
32
34
36
38
26
28
30
32
34
36
38
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
Power Compression @ 32 GHz
30
28
26
24
22
20
25
20
Pout
Gain
PAE
15
10
5
+25 C
+85 C
- 40 C
18
16
14
0
26
28
30
32
34
36
38
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
Absolute Maximum Ratings
10
9
8
7
6
5
4
3
2
1
0
30
27
24
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
+3.5 V
+5 dBm
175 °C
21
Gain
P1dB
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
18
0.8 W
15
12
9
Thermal Resistance
(channel to ground paddle)
104 °C/W
Noise Figure
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
6
3
0
2.5
3
3.5
Vdd (V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 192
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+2.5
79
82
85
+3.0
+3.5
Note: Amplifier will operate over full voltage ranges shown
above.
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4 - 7, 12 - 15,
17 - 19, 24
This pins and exposed ground paddle
must be connected to RF/DC ground.
GND
This pin is AC coupled
and matched to 50 Ohms.
3
RFIN
N/C
8 - 11
16
No Connection
This pin is AC coupled
and matched to 50 Ohms.
RFOUT
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 10 nF and 4.7 μF are required.
23, 22, 21, 20
Vdd1, 2, 3, 4
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 193
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
Package Marking [1]
H566
XXXX
HMC566LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn [2]
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 194
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 122782 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
Description
J1 - J5
J6 - J7
C1 - C4
C5 - C8
C9 - C12
U1
DC Pin
PCB Mount K Connector
100 pF Capacitor, 0402 Pkg.
10 nF Capacitor, 0603 Pkg.
4.7 μF Capacitor, Tantalum
HMC566LP4E
[2]
PCB
122780 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25 FR
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 195
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