HMC566_09 [HITTITE]
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz; 的GaAs PHEMT MMIC低噪声放大器， 29 - 36 GHz的
| 型号： | HMC566_09 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
Typical Applications
Features
The HMC566 is ideal for use as a LNA or driver ampli-
fi e r f o r :
Noise Figure: 2.8 dB
Gain: 20 dB
• Point-to-Point Radios
OIP3: 23.5 dBm
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Single Supply: +3V @ 80 mA
50 Ohm Matched Input/Output
Small Size: 2.54 x 0.98 x 0.10 mm
General Description
Functional Diagram
The HMC566 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifier (LNA) chip which operates
from 29 to 36 GHz. The HMC566 provides 20 dB of
small signal gain, 2.8 dB of noise figure and output
IP3 of 23.5 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, slightly positive gain slope,
single +3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3, 4 = +3V
Parameter
Min.
Typ.
29 - 33
20
Max.
Min.
19
Typ.
33 - 36
22
Max.
Units
GHz
dB
Frequency Range
Gain
17
Gain Variation Over Temperature
Noise Figure
0.03
2.8
0.05
3.3
0.03
2.8
0.05
3.3
dB/ °C
dB
Input Return Loss
15
15
dB
Output Return Loss
9
8
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
9
12
9
12
dBm
dBm
dBm
mA
14.5
23.5
80
14.5
23.5
80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
30
25
20
S21
S11
S22
0
-5
15
-10
-15
-20
-25
+25C
+85C
-55C
10
5
24
26
28
30
32
34
36
38
40
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
-5
-10
-15
-20
-25
-30
-2
+25C
+85C
-55C
-4
-6
-8
-10
-12
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
10
0
8
-10
+25C
+85C
-55C
+25C
6
4
2
0
-20
+85C
-55C
-30
-40
-50
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 91
HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
P1dB vs. Temperature
Psat vs. Temperature
20
20
16
12
8
16
12
+25C
+85C
-55C
8
4
0
+25C
+85C
-55C
4
0
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
Output IP3 vs. Temperature
Power Compression @ 32 GHz
30
22
20
18
26
16
14
12
10
8
Pout
Gain
PAE
22
+25C
+85C
-55C
18
14
10
6
4
2
0
27 28 29 30 31 32 33 34 35 36 37 38
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
FREQUENCY (GHz)
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
10
9
8
7
6
5
4
3
2
1
0
24
22
20
18
16
14
12
10
8
Gain
P1dB
6
Noise Figure
4
2.5
3
3.5
Vdd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Vdd (Vdc)
Idd (mA)
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
+3.5 Vdc
+5 dBm
175 °C
+2.5
77
+3.0
80
+3.5
83
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
0.82 W
Note: Amplifier will operate over full voltage ranges shown
above.
Thermal Resistance
(channel to die bottom)
104.2 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
Standard
Alternate
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 93
HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is AC coupled and matched to
50 Ohms from 29 - 36 GHz.
1
IN
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
2, 3, 4, 5
Vdd1, 2, 3, 4
This pad is AC coupled and matched to
50 Ohms from 29 - 36 GHz.
6
OUT
GND
Die Bottom
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 94
HMC566
v00.0306
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 29 - 36 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
0.102mm (0.004”) Thick GaAs MMIC
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
Wire Bond
0.076mm
(0.003”)
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
Mounting
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
fl a t .
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 95
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