HMC475ST89_10 [HITTITE]

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz; 的InGaP HBT增益模块放大器MMIC , DC - 4.5 GHz的
HMC475ST89_10
型号: HMC475ST89_10
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz
的InGaP HBT增益模块放大器MMIC , DC - 4.5 GHz的

放大器
文件: 总6页 (文件大小:202K)
中文:  中文翻译
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HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
Typical Applications  
Features  
The HMC475ST89 / HMC475ST89E is an ideal RF/IF  
gain block & LO or PA driver:  
P1dB Output Power: +22 dBm  
8
Gain: 21.5 dB  
• Cellular / PCS / 3G  
Output IP3: +35 dBm  
• Fixed Wireless & WLAN  
• CATV, Cable Modem & DBS  
• Microwave Radio & Test Equipment  
• IF and RF Applications  
Cascadable 50 Ohm I/Os  
Single Supply: +8V to +12V  
Industry Standard SOT89 Package  
Functional Diagram  
General Description  
The HMC475ST89(E) is a InGaP Heterojunction  
Bipolar Transistor (HBT) Gain Block MMIC SMT  
amplifier covering DC to 4.5 GHz. Packaged in an  
industry standard SOT89, the amplifier can be used  
as a cascadable 50 Ohm RF/IF gain stage as well as  
a LO or PA driver with up to +25 dBm output power.  
The HMC475ST89(E) offers 21.5 dB of gain and +35  
dBm output IP3 at 850 MHz while requiring only 110  
mA from a single positive supply. The Darlington  
topology results in reduced sensitivity to normal  
process variations and excellent gain stability over  
temperature while requiring a minimal number of  
external bias components.  
Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C  
Parameter  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 4.5 GHz  
DC - 4.5 GHz  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 4.5 GHz  
DC - 1.0 GHz  
1.0 - 4.5 GHz  
DC - 4.5 GHz  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 4.5 GHz  
DC - 2.5 GHz  
2.5 - 4.5 GHz  
DC - 3.0 GHz  
3.0 - 4.5 GHz  
19.5  
17.5  
14.5  
11.5  
9
21.5  
19.5  
16.5  
13.5  
12  
0.008  
11  
14  
14  
13  
10  
dB  
dB  
dB  
dB  
dB  
dB/ °C  
dB  
dB  
dB  
dB  
Gain  
Gain Variation Over Temperature  
Input Return Loss  
0.012  
Output Return Loss  
Reverse Isolation  
dB  
dB  
25  
19.0  
18.0  
17.5  
13.0  
11.0  
22.0  
21.0  
19.5  
16.0  
14.0  
35  
30  
3.5  
3.8  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept (IP3)  
(Pout= 0 dBm per tone, 1 MHz spacing)  
Noise Figure  
dB  
Supply Current (Icq)  
110  
135  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 74  
HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
Broadband Gain & Return Loss  
Gain vs.Temperature  
25  
20  
15  
10  
5
26  
24  
22  
20  
18  
16  
14  
8
S21  
S11  
S22  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
12  
+25C  
+85C  
-40C  
10  
8
6
4
2
0
0
1
2
3
4
5
6
5
5
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs.Temperature  
Output Return Loss vs.Temperature  
0
0
-5  
+25C  
+85C  
-40C  
+25C  
+85C  
-5  
-10  
-15  
-20  
-25  
-40C  
-10  
-15  
-20  
-25  
-30  
-35  
0
1
2
3
4
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs.Temperature  
Noise Figure vs.Temperature  
0
10  
+25C  
8
+25C  
+85C  
-40C  
+85C  
-10  
-20  
-30  
-40  
-40C  
6
4
2
0
0
1
2
3
4
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 75  
HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
P1dB vs. Temperature  
Psat vs. Temperature  
28  
28  
8
24  
20  
16  
12  
8
24  
20  
16  
+25C  
+85C  
-40C  
12  
8
+25C  
+85C  
-40C  
4
4
0
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Gain, Power & OIP3 vs. Supply Voltage  
Output IP3 vs. Temperature  
for Constant Icc= 110 mA @ 850 MHz  
42  
45  
36  
30  
24  
18  
40  
35  
30  
25  
12  
6
Gain  
P1dB  
Psat  
IP3  
+25C  
+85C  
-40C  
20  
0
15  
8
9
10  
Vs (Vdc)  
11  
12  
0
1
2
3
4
5
FREQUENCY (GHz)  
Vcc vs. Icc Over Temperature for  
Fixed Vs= 8V, RBIAS= 9.1 Ohms  
140  
+85C  
+25C  
-40C  
135  
130  
125  
120  
115  
110  
105  
100  
95  
90  
85  
80  
75  
6.9  
7
7.1  
7.2  
7.3  
7.4  
7.5  
Vcc (Vdc)  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 76  
HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc)  
RF Input Power (RFIN)(Vcc = +7.2 Vdc)  
Junction Temperature  
+8.0 Vdc  
8
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
+17 dBm  
150 °C  
1.09 W  
Continuous Pdiss (T = 85 °C)  
(derate 16.86 mW/°C above 85 °C)  
Thermal Resistance  
(junction to lead)  
59.3 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL:  
MOLDING COMPOUND MP-180S OR EQUIVALENT.  
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.  
3. LEAD PLATING: 100% MATTE TIN.  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H475  
XXXX  
HMC475ST89  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H475  
XXXX  
MSL1 [2]  
HMC475ST89E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 77  
HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
8
This pin is DC coupled.  
An off chip DC blocking capacitor is required.  
1
IN  
3
OUT  
GND  
RF output and DC Bias (Vcc) for the output stage.  
These pins and package bottom must be connected to RF/  
DC ground.  
2, 4  
Application Circuit  
Recommended Bias Resistor Values for  
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc  
Supply Voltage (Vs)  
RBIAS VALUE  
8V  
9V  
10V  
27 Ω  
½ W  
12V  
43 Ω  
1 W  
Note:  
1. External blocking capacitors are required on  
RFIN and RFOUT.  
2. RBIAS provides DC bias stability over temperature.  
9.1 Ω  
¼ W  
18 Ω  
½ W  
RBIAS POWER RATING  
Recommended Component Values for Key Application Frequencies  
Frequency (MHz)  
Component  
50  
900  
1900  
18 nH  
100 pF  
2200  
18 nH  
100 pF  
2400  
15 nH  
100 pF  
3500  
8.2 nH  
100 pF  
4500  
6.8 nH  
100 pF  
L1  
270 nH  
0.01 μF  
56 nH  
100 pF  
C1, C2  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 78  
HMC475ST89 / 475ST89E  
v02.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 4.5 GHz  
Evaluation PCB  
8
List of Materials for Evaluation PCB 116092 [1]  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 Ohm impedance while the  
package ground leads and package bottom should  
be connected directly to the ground plane similar to  
that shown. A sufficient number of via holes should  
be used to connect the top and bottom ground  
planes. The evaluation board should be mounted  
to an appropriate heat sink. The evaluation circuit  
board shown is available from Hittite upon request.  
Item  
J1 - J2  
J3 - J4  
C1, C2  
C3  
Description  
PCB Mount SMA Connector  
DC Pin  
Capacitor, 0402 Pkg.  
100 pF Capacitor, 0402 Pkg.  
1000 pF Capacitor, 0603 Pkg.  
2.2 μF Capacitor, Tantalum  
Resistor, 1206 Pkg.  
C4  
C5  
R1  
L1  
Inductor, 0603 Pkg.  
U1  
HMC475ST89 / HMC475ST89E  
107368 Evaluation PCB  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 79  

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