HMC476MP86 [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 6.0 GHz的
| 型号： | HMC476MP86 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Typical Applications
The HMC476MP86 is an ideal RF/IF
gain block & LO or PA driver for:
Features
P1dB Output Power: +12 dBm
8
Gain: 20 dB
• Cellular / PCS / 3G
Output IP3: +25 dBm
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC476MP86 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 6 GHz. This Micro-P packaged
amplifier can be used as a cascadable 50 Ohm
RF/IF gain stage as well as a LO or PA driver with
up to +13 dBm output power. The HMC476MP86
offers 20 dB of gain with a +25 dBm output IP3
at 850 MHz while requiring only 35 mA from a
single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 56 Ohm,TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
18.5
15.5
13.5
11.5
9.0
20.0
17.0
15.0
13.0
10.5
dB
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 6.0 GHz
0.008
0.012
dB/ °C
DC - 1.0 GHz
1.0 - 6.0 GHz
20
15
dB
dB
DC - 4.5 GHz
4.5 - 6.0 GHz
20
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 6.0 GHz
18
dB
0.5 - 5.0 GHz
5.0 - 6.0 GHz
9.0
8.0
12.0
11.0
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5.0 GHz
5.0 - 6.0 GHz
25
23
dBm
dBm
DC - 3.0 GHz
3.0 - 6.0 GHz
2.5
3.5
dB
dB
Noise Figure
Supply Current (Icq)
35
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 242
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Broadband Gain & Return Loss
Gain vs.Temperature
25
20
15
10
24
22
20
18
16
14
12
10
8
8
5
S21
0
-5
S11
S22
-10
-15
-20
-25
-30
+25 C
+85 C
-40 C
6
4
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+25 C
+25 C
-5
-10
-5
-10
+85 C
+85 C
-40 C
-40 C
-15
-20
-25
-30
-15
-20
-25
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Noise Figure vs.Temperature
0
8
7
6
5
4
3
2
1
0
+25 C
+25 C
+85 C
-40 C
-5
-10
+85 C
-40 C
-15
-20
-25
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 243
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
P1dB vs.Temperature
Psat vs.Temperature
8
18
17
16
15
14
13
12
11
10
9
18
17
16
15
14
13
12
11
10
9
8
8
7
7
6
6
5
5
+25 C
+25 C
4
4
+85 C
-40 C
+85 C
-40 C
3
3
2
2
1
0
1
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Id= 35 mA @ 850 MHz
Output IP3 vs.Temperature
30
28
26
24
22
20
18
28
26
24
22
20
18
16
14
12
10
16
+25 C
14
12
10
+85 C
-40 C
8
6
4
2
Gain
P1dB
Psat
OIP3
0
1
2
3
4
5
6
0
FREQUENCY (GHz)
5
6
7
8
9
10
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 56 Ohms
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
+85 C
+25 C
-40 C
3.3
2.7
2.8
2.9
3
3.1
3.2
3.4
Vcc (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 244
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Absolute Maximum Ratings
8
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFin)(Vcc = +3.0 Vdc)
Junction Temperature
+6.0 Vdc
45 mA
+18 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C)
0.504 W
Thermal Resistance
(junction to lead)
129 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 245
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Pin Descriptions
8
Pin Number
Function
Description
Interface Schematic
This pin is DC coupled.
1
RFIN
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
3
RFOUT
GND
2, 4
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2.RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
8V
10V
12V
RBIAS VALUE
56 Ω
1/8 W
130 Ω
1/4 W
180 Ω
1/4 W
240 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5800
3.3 nH
100 pF
L1
270 nH
0.01 µF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 246
HMC476MP86
v00.0603
MICROWAVE CORPORATION
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Evaluation PCB
8
List of Materials
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads
should be connected directly to the ground plane similar
to that shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate
heat sink.The evaluation circuit board shown is available
from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PC Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 µF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC476MP86
PCB*
107087 Evaluation PCB
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 247
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HITTITE
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