HMC476MP86E [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz; 的SiGe HBT增益模块放大器MMIC , DC - 6 GHz的型号: | HMC476MP86E |
厂家: | HITTITE MICROWAVE CORPORATION |
描述: | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz |
文件: | 总6页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HMC476MP86 / 476MP86E
v01.0505
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
The HMC476MP86 / HMC476MP86E is an ideal RF/
IF gain block & LO or PA driver for:
P1dB Output Power: +12 dBm
Gain: 20 dB
8
• Cellular / PCS / 3G
Output IP3: +25 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Included in the HMC-DK001 Designer’s Kit
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
General Description
Functional Diagram
The HMC476MP86 & HMC476MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 6 GHz. This
Micro-P packaged amplifier can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +13 dBm output power.
The HMC476MP86 & HMC476MP86E offers 20 dB
of gain with a +25 dBm output IP3 at 850 MHz while
requiring only 35 mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 5V, Rbias= 56 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
18.5
15.5
13.5
11.5
9.0
20.0
17.0
15.0
13.0
10.5
dB
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 6 GHz
0.008
0.012
dB/ °C
DC - 1.0 GHz
1.0 - 6.0 GHz
20
15
dB
dB
DC - 4.5 GHz
4.5 - 6.0 GHz
20
13
dB
dB
Output Return Loss
Reverse Isolation
DC - 6 GHz
18
dB
0.5 - 5.0 GHz
5.0 - 6.0 GHz
9.0
8.0
12.0
11.0
dBm
dBm
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 5 GHz
5.0 - 6.0 GHz
25
23
dBm
dBm
DC - 3.0 GHz
3.0 - 6.0 GHz
2.5
3.5
dB
dB
Noise Figure
Supply Current (Icq)
35
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 1
HMC476MP86 / 476MP86E
v02.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Broadband Gain & Return Loss
Gain vs.Temperature
25
20
15
10
5
24
8
20
16
S21
S11
S22
0
12
-5
+25 C
-10
-15
-20
-25
-30
8
+85 C
-40 C
4
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
6
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
-5
-5
+25 C
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
+85 C
-40 C
0
1
2
3
4
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Noise Figure vs.Temperature
0
8
-5
+25 C
+85 C
-40 C
6
4
2
0
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 2
HMC476MP86 / 476MP86E
v02.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
P1dB vs.Temperature
Psat vs.Temperature
18
18
8
15
12
9
15
12
9
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
6
6
3
3
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Id= 35 mA @ 850 MHz
Output IP3 vs.Temperature
30
28
24
20
16
12
26
22
18
14
10
+25 C
+85 C
-40 C
8
4
0
Gain
P1dB
Psat
IP3
0
1
2
3
4
5
6
5
6
7
8
9
10
FREQUENCY (GHz)
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 56 Ohms
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
+85 C
+25 C
-40 C
3.3
2.7
2.8
2.9
3
3.1
3.2
3.4
Vcc (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 3
HMC476MP86 / 476MP86E
v02.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
Collector Bias Current (Icc)
45 mA
RF Input Power (RFIN)(Vcc = +3.0 Vdc) +5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C)
0.504 W
Thermal Resistance
(junction to lead)
129 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking
476
HMC476MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1 [2]
HMC476MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
476
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 4
HMC476MP86 / 476MP86E
v02.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
8
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values
for Icc= 35 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
8V
10V
12V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
56 Ω
1/8 W
130 Ω
1/4 W
180 Ω
1/4 W
240 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5800
3.3 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 5
HMC476MP86 / 476MP86E
v02.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
8
List of Materials for Evaluation PCB 107487 [1]
The circuit board used in the application should
use RF circuit design techniques. Signal lines sho-
uld have 50 Ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC476MP86 / HMC476MP86E
107087 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 6
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