2SK3211(L) [HITACHI]
Power Field-Effect Transistor, 25A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3;
| 型号： | 2SK3211(L) |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 25A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-761A (Z)
2nd. Edition
Feb. 1999
Features
•
Low on-resistance
RDS = 60 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
D
1
2
3
1
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK3211
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
200
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±20
V
25
A
Note1
Drain peak current
ID(pulse)
100
A
Body-drain diode reverse drain current IDR
25
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
25
A
EAR
41
mJ
W
°C
°C
Pch Note2
100
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3211
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
200
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±10
µA
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain
current
10
VDS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
1.0
—
—
18
—
—
—
—
—
—
—
—
—
2.5
75
85
—
—
—
—
—
—
—
—
—
V
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 VNote4
ID = 15 A, VGS = 4 VNote4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V
60
mΩ
mΩ
S
resistance
RDS(on)
65
Forward transfer admittance |yfs|
30
Input capacitance
Output capacitance
Ciss
2420
790
340
20
pF
pF
pF
ns
ns
ns
ns
V
Coss
VGS = 0
Reverse transfer capacitance Crss
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
ID = 15 A, VGS = 10 V
RL = 2 Ω
230
590
330
0.95
Turn-off delay time
Fall time
Body–drain diode forward
voltage
VDF
IF = 25 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
230
—
ns
IF = 25 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
3
2SK3211
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
40
30
20
10
30
10
3
1
Operation in
this area is
0.3
0.1
limited by R
DS(on)
0.03
0.01
Ta = 25 °C
200
(V)
0
50 100
Drain to Source Voltage
20
1
2
5
10
500
50
100
150
200
V
DS
Case Temperature Tc (°C)
Typical Transfer Characteristics
= 10 V
Typical Output Characteristics
Pulse Test
3.5 V
50
40
30
20
10
20
16
12
8
10 V
6 V
4 V
V
DS
Pulse Test
3 V
Tc = 75°C
–25°C
4
V
GS
=2.5 V
25°C
0
0
1
2
3
4
GS
5
2
4
6
8
10
Gate to Source Voltage
V
(V)
Drain to Source Voltage
V
(V)
DS
4
2SK3211
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
500
2.5
2.0
1.5
1.0
0.5
Pulse Test
Pulse Test
200
100
V
= 4 V
GS
10 V
50
I
= 15 A
10 A
5 A
D
20
10
1
2
12
Gate to Source Voltage
5
10
20
50 100
(A)
0
4
8
16
20
V
(V)
Drain Current
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
250
Pulse Test
Tc = –25 °C
25 °C
20
10
5
200
150
100
50
75 °C
5,10,15 A
V
= 4 V
GS
5,10,15 A
2
1
10 V
40
V
= 10 V
DS
Pulse Test
0
–40
0.5
0.1 0.3
0
80
120
T
c (°C)
160
1
3
10
D
30
(A)
100
Case Temperature
Drain Current
I
5
2SK3211
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
10000
5000
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
Ciss
2000
1000
500
200
100
50
Coss
Crss
200
100
50
20
10
V
= 0
GS
20
10
f = 1 MHz
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 20 A
Switching Characteristics
1000
200
160
120
80
20
I
D
t
d(off)
500
16
12
8
V
= 150 V
100 V
50 V
DD
t
t
f
200
100
V
GS
r
50
V
= 10 V, V
= 30 V
DD
GS
PW = 5 µs, duty < 1 %
t
d(on)
40
4
0
V
= 150 V
100 V
50 V
DD
20
10
V
DS
0
20
2
0.1 0.2
1
10
40
80
120
160
200
0.5
5
Gate Charge Qg (nc)
Drain Current
I
(A)
D
6
2SK3211
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
50
40
30
20
Pulse Test
I
= 25 A
AP
V
= 50 V
DD
duty < 0.1 %
Rg > 50 Ω
10 V
5 V
4
10
0
V
= 0, –5 V
GS
0
0.2
0.4
0.6
0.8
SD
1.0
(V)
25
50
75
100
125
150
Source to Drain Voltage
V
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50Ω
V
DD
0
7
2SK3211
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK3211
Package Dimensions
As of January, 2001
Unit: mm
4.44 ± 0.2
1.3 ± 0.15
10.2 ± 0.3
2.59 ± 0.2
1.2 ± 0.2
1.27 ± 0.2
+ 0.2
– 0.1
0.86
0.76 ± 0.1
2.54 ± 0.5
0.4 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (L)
—
EIAJ
—
Mass (reference value)
1.4 g
9
2SK3211
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
1.2 ± 0.2
2.54 ± 0.5
0.86
– 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (S)-(1)
—
EIAJ
—
Mass (reference value)
1.3 g
10
2SK3211
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
1.2 ± 0.2
2.54 ± 0.5
0.86
– 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (S)-(2)
—
EIAJ
—
Mass (reference value)
1.35 g
11
2SK3211
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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Electronic Components Group
Hitachi Asia Ltd.
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URL : http://www.hitachi.com.hk
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Electronic Components Group.
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
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Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12
相关型号：
2SK3211(S)
Power Field-Effect Transistor, 25A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
HITACHI
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