2SJ361TR [HITACHI]
Small Signal Field-Effect Transistor, UPAK-3;型号: | 2SJ361TR |
厂家: | HITACHI SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, UPAK-3 |
文件: | 总9页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SJ361
Silicon P-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source
Outline
UPAK
1
2
3
4
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SJ361
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
–20
VGSS
±20
V
ID
–2
A
1
Drain peak current
ID(pulse)
*
–4
A
Body to drain diode reverse drain current
Channel dissipation
IDR
–2
A
Pch*2
Tch
1
W
°C
°C
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
150
Tstg
–55 to +150
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “RY”.
2
2SJ361
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS –20
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
–10
–1.5
0.4
1.5
—
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = –16 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –1 A, VGS = –10 V
ID = –0.4 A, VGS = –2.5 V
ID = –1 A, VDS = –10 V
VDS = –10 V, VGS = 0,
f = 1 MHz
Zero gate voltage drain current IDSS
—
—
Gate to source cutoff voltage
Static drain to source on state RDS(on)
resistance
VGS(off)
–0.5
—
—
0.28
0.85
0.3
Ω
—
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
0.15
—
S
3.2
—
pF
pF
pF
ns
ns
ns
ns
V
—
130
0.6
—
—
—
—
350
1650
7280
6950
–1.0
—
ID = –1 A, VGS = –10 V,
—
—
RL = 10 Ω
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body to drain diode forward
voltage
VDF
—
—
IF = –2 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
530
—
ns
IF = –2 A, VGS = 0,
diF/dt = 20 A/µs
Note: 1. Pulse test
3
2SJ361
Power vs. Temperature Derating
Maximum Safe Operation Area
–10
2.0
1.5
1.0
0.5
–3
–1
–0.3
–0.1
Operation in
this area is
limited by R
DS(on)
–0.03
–0.01
Ta = 25 °C
0
50
100
150
200
–0.05 –0.1 –0.3
–1
–3
–10
–30
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V
Typical Transfer Characteristics
–5
–4
–3
–2
–1
–2.0
–1.6
–1.2
–0.8
–0.4
–5 V
–3.5 V
V
= –10 V
DS
–4 V
Pulse Test
Pulse Test
–3 V
–2.5 V
75 °C
25 °C
Tc = –25 °C
–2 V
V
GS
= –1.5 V
0
–2
–4
–6
–8
–10
(V)
0
–1
–2
–3
–4
(V)
GS
–5
Drain to Source Voltage
V
Gate to Source Voltage
V
DS
4
2SJ361
Static Drain to Source on State Resistance
vs. Drain Current
5
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
–0.4
–0.3
–0.2
–0.1
Pulse Test
Pulse Test
3
I
= –1 A
D
–2.5 V
1
–4 V
= –10 V
–0.5 A
–0.2 A
V
GS
0.3
0.1
–0.1
–0.3
–1
–3
(A)
–10
0
–2
–4
–6
–8
–10
(V)
Gate to Source Voltage
V
Drain Current
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
2.0
1
Pulse Test
1.6
1.2
0.8
0.4
Tc = –25 °C
0.3
0.1
–1 A
25 °C
75 °C
–0.5 A
–0.2 A
V
= –2.5 V
GS
–0.5 A
–0.2 A
–1 A
–4 V
0.3
V
= –10 V
–1 A
DS
Pulse Test
–0.5 A
I
= –0.2 A
D
–10 V
40
0.01
0
–40
–0.1
–0.3
Drain Current I
–1
–3
(A)
–10
0
80
120
160
D
Case Temperature Tc (°C)
5
2SJ361
3000
Typical Capacitance vs.
Drain to Source Voltage
Body–Drain Diode Reverse
Recovery Time
500
300
Coss
100
30
di/dt = 20 A/µs
V
= 0
GS
V
GS
= 0, Ta = 25 °C
f = 1 MHz
1000
10
Ciss
Crss
3
1
300
0.3
0.1
100
0
–4
–8
–12
–16
–20
(V)
–0.1
–0.3
–1
–3
–10
Reverse Drain Current
I
(A)
Drain to Source Voltage V
DR
DS
Switching Characteristics
Dynamic Input Characteristics
20
10
0
–20
–40
–60
–80
0
t
d(off)
V
DS
t
–4
f
V
= –10 V
DD
3
1
–20 V
–8
t
r
I
= –2 A
V
V
= –10 V
= –10 V
D
GS
DD
–12
PW = 30 µs
duty < 1 %
t
d(on)
V
= –10 V
–20 V
DD
0.3
0.1
V
GS
–16
–20
–100
0
–0.1
–0.3
–1
–3
(A)
–10
0.4
0.8
1.2
1.6
2.0
Drain Current
I
Gate Charge Qg (nc)
D
6
2SJ361
Reverse Drain Current vs.
Source to Drain Voltage
–5
–4
–3
–2
–1
Pulse Test
–10 V
–5 V
–2.5 V
V
= 0, 5 V
GS
0
–0.2
–0.4 –0.6 –0.8
–1.0
(V)
Source to Drain Voltage
V
SD
Switching Time Test Circuit
Waveforms
Vout
Vin
Vin Monitor
D.U.T.
Monitor
10%
R
L
90%
90%
V
DD
Vin
10 V
90%
10%
50Ω
= –10 V
10%
Vout
td(off)
td(on)
t
f
tr
7
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
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Germany
Tel: <49> (89) 9 9180-0
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179 East Tasman Drive,
San Jose,CA 95134
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Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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