2SJ363 [HITACHI]

Silicon P-Channel MOS FET; 硅P沟道MOS场效应管


型号：	2SJ363
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon P-Channel MOS FET 硅P沟道MOS场效应管
文件：	总7页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SJ363

Silicon P-Channel MOS FET

Application

Low frequency power switching

Features

•

Low on-resistance

Low drive current

4 V gate drive device can be driven from 5 V source

Outline

UPAK

1. Gate

2. Drain

3. Source

4. Drain

2SJ363

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DSS

Ratings

Unit

Drain to source voltage

Gate to source voltage

Drain current

–30

V_GSS

±20

I_D

–2

Drain peak current

I_D(pulse)

–4

Body to drain diode reverse drain current

Channel dissipation

I_DR

–2

Pch*²

Tch

°C

Channel temperature

Storage temperature

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

150

Tstg

–55 to +150

2. Value on the alumina ceramic board (12.5×20×0.7 mm)

3. Marking is “PY”.

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V_(BR)DSS–30

—

I_D= –10 mA, V_GS= 0

Gate to source breakdown

voltage

V_(BR)GSS±20

—

I_G= ±10 µA, V_DS= 0

Gate to source leak current

I_GSS

—

±5

µA

V_GS= ±16 V, V_DS= 0

V_DS= –24 V, V_GS= 0

I_D= –100 µA, V_DS= –10 V

I_D= –1 A, V_GS= –4 V*¹

I_D= –1 A, V_GS= –10 V*¹

I_D= –1 A, V_DS= –10 V*¹

V_DS= –10 V, V_GS= 0,

f = 1 MHz

Zero gate voltage drain current I_DSS

—

–1

Gate to source cutoff voltage

Static drain to source on state R_DS(on)

resistance

V_GS(off)

–1.0

—

–2.0

0.75

0.45

—

0.6

0.35

2.0

2.1

100

0.25

1.65

Ω

—

Ω

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

1.4

—

µs

—

I_D= –1 A, V_GS= –10 V,

—

R_L= 30 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

—

25.9

14.9

—

2SJ363

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

100 µs

–10

2.0

1.5

1.0

0.5

–3

–1

–0.3

–0.1 Operation in

this area is

limited by R

DS(on)

–0.03

Ta = 25 °C

–0.01

100

150

200

–0.1 –0.3

–1

–3

–10 –30 –100

Drain to Source Voltage

(V)

Ambient Temperature Ta (°C)

Typical Output Characteristics

–4 V

–4.5 V

–2.0

Typical Transfer Characteristics

–5

–4

–3

–2

–1

Pulse Test

–1.6

–1.2

–0.8

–0.4

Ta = –25 °C

25 °C

75 °C

= –10 V

–1

= –1.5 V

–6

–2

–4

–8

–10

(V)

–2

–3

–4

–5

Drain to Source Voltage

Gate to Source Voltage

(V)

2SJ363

Static Drain to Source on State Resistance

vs. Drain Current

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–1.0

–0.8

–0.6

–0.4

–0.2

Pulse Test

–2 A

–1 A

= –4 V

–10 V

0.3

0.1

= –0.5 A

0.03

0.01

–0.01 –0.03 –0.1 –0.3

Drain Current

–1

–3

(A)

–10

–4

–8

–12

–16

–20

Gate to Source Voltage

(V)

Forward Transfer Admittance vs.

Drain Current

Static Drain to Source on State Resistance

vs. Temperature

2.0

Pulse Test

1.6

1.2

0.8

0.4

Tc = –25 °C

–1 A

–0.5 A

75 °C

25 °C

= –2 A

= –4 V

0.5

= –10 V

0.2

0.1

= –2 A

–1 A

Pulse Test

= –10 V

–0.5 A

–40

–0.1 –0.2

–0.5 –1 –2

Drain Current I

–5 –10

120

160

(A)

Case Temperature Tc (°C)

2SJ363

Typical Capacitance vs.

Drain to Source Voltage

Switching Characteristics

500

100

200

100

= 0

Coss

f = 1 MHz

d(off)

Ciss

Crss

–20

0.5

= –10 V

PW = 50 µs, duty < 1 %

d(on)

0.2

0.1

–10

–30

–40

–50

(V)

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

Drain to Source Voltage V

Drain Current

(A)

Reverse Drain Current vs.

Source to Drain Voltage

–5

–4

–3

–2

–1

Pulse Test

–10 V

–5 V

= 0

–0.4 –0.8 –1.2

Source to Drain Voltage

–1.6

–2.0

(V)

Unit: mm

4.5 ± 0.1

1.5 ± 0.1

0.44 Max

1.8 Max

(1.5)

0.53 Max

0.48 Max

0.44 Max

1.5

3.0

Hitachi Code

JEDEC

UPAK

—

EIAJ

Conforms

Weight (reference value) 0.050 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

2SJ363 [HITACHI]

相关型号：

2SJ363PY

2SJ363PYTL

2SJ363PYUL

2SJ363PYUR

2SJ364

2SJ364O

2SJ364P

2SJ364Q

2SJ365

2SJ366

2SJ367

2SJ368