2SJ364 [PANASONIC]
Silicon P-Channel Junction FET; 硅P沟道结型场效应管
| 型号： | 2SJ364 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon P-Channel Junction FET |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SJ364
Silicon P-Channel Junction FET
For analog switch
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
● Low ON-resistance
● Low-noise characteristics
1
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Symbol
VGDS
ID
Ratings
65
Unit
V
−20
mA
mA
mW
°C
0.2±0.1
Gate current
IG
−10
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
1: Source
2: Drain
3: Gate
Tch
150
EIAJ: SC-70
S-Mini Type Package (3-pin)
Tstg
−55 to +150
°C
Marking Symbol (Example): 4M
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
VDS = −10V, VGS = 0
min
typ
max
−6
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
− 0.2
IGSS
VGS = 30V, VDS = 0
10
VGDS
VGSC
| Yfs |
RDS(on)
IG = 10µA, VDS = 0
65
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
VDS = −10V, ID = −10µA
VDS = −10V, ID = −1mA, f = 1kHz
VDS = −10mV, VGS = 0
1.5
2.5
300
12
3.5
V
1.8
mS
Ω
Input capacitance (Common Source) Ciss
pF
pF
VDS = −10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
4
* IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1 − 0.6 to −1.5
4MO 4MP
−1 to −3
4MQ
−2.5 to −6
4MR
Marking Symbol
1
Silicon Junction FETs (Small Signal)
2SJ364
PD
Ta
ID VDS
ID
VGS
200
175
150
125
100
75
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
0
VDS=–10V
Ta=25˚C
VGS=0V
0.2V
0.4V
50
0.6V
0.8V
25
0
0
20 40 60 80 100 120 140 160
0
–2
–4
–6
–8
–10 –12
0
1
2
3
4
5
(
)
(
V
)
( )
Gate to source voltage VGS V
Ambient temperature Ta ˚C
Drain to source voltage VDS
| Yfs | VGS
| Yfs | ID
Ciss, Coss, Crss
VDS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
16
14
12
10
8
24
20
16
12
8
f=1MHz
VGS=0
Ta=25˚C
VDS=–10V
f=1kHz
Ta=25˚C
VDS=–10V
f=1kHz
Ta=25˚C
Ciss
6
4
4
Coss
Crss
2
0
0
–1
2.0
1.5
1.0
0.5
0
)
0
–2
–4
–6
–8
–10 –12
–3
–10
–30
–100
(
V
(
)
( )
Drain to source voltage VDS V
Gate to source voltage VGS
Drain current ID mA
2
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